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    POLISHING COMPOSITION CONTAINING CERIA ABRASIVE
    2.
    发明申请
    POLISHING COMPOSITION CONTAINING CERIA ABRASIVE 有权
    包含CERIA磨砂的抛光组合物

    公开(公告)号：US20170044403A1

    公开(公告)日：2017-02-16

    申请号：US15338724

    申请日：2016-10-31

    Applicant: Cabot Microelectronics Corporation

    Inventor： Brian REISS ,  Dana SAUTER VAN NESS ,  Viet LAM ,  Alexander HAINS ,  Steven KRAFT ,  Renhe JIA

    IPC: C09G1/02 ,  B24B37/04 ,  H01L21/3105 ,  C09K3/14 ,  B24B37/20

    CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  B24B37/20 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1409 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

    Abstract: The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.

    Abstract translation: 本发明提供了一种化学机械抛光组合物，其包括第一磨料颗粒，其中第一磨料颗粒是湿法二氧化铈颗粒，其中值粒径为约40nm至约100nm，以抛光组合物的浓度存在于抛光组合物中 约0.005重量％ ％至约2wt。 ％，并且具有至少约300nm的粒度分布，官能化杂环，pH调节剂和水性载体，并且其中抛光组合物的pH为约1至约6.本发明还提供了一种 将抛光组合物抛光衬底，特别是包含氧化硅层的衬底的方法。

    METHODS AND COMPOSITIONS FOR PROCESSING DIELECTRIC SUBSTRATE
    3.
    发明申请
    METHODS AND COMPOSITIONS FOR PROCESSING DIELECTRIC SUBSTRATE 审中-公开
    用于处理电介质基板的方法和组合物

    公开(公告)号：US20170014969A1

    公开(公告)日：2017-01-19

    申请号：US15207973

    申请日：2016-07-12

    Applicant: Cabot Microelectronics Corporation

    Inventor： Viet LAM ,  Ji CUI

    IPC: B24B37/04 ,  C09G1/02

    CPC classification number: B24B37/044 ,  C09G1/02

    Abstract: Described are materials and methods for processing (polishing or planarizing) a substrate that contains pattern dielectric material using a polishing composition (aka “slurry”) and an abrasive pad, e.g., CMP processing.

    Abstract translation: 描述了使用抛光组合物（又称“浆料”）和研磨垫（例如CMP处理）来处理（抛光或平面化）包含图形电介质材料的基板的材料和方法。

    POLISHING COMPOSITION CONTAINING CATIONIC POLYMER ADDITIVE
    4.
    发明申请
    POLISHING COMPOSITION CONTAINING CATIONIC POLYMER ADDITIVE 有权
    包含阳离子聚合物添加剂的抛光组合物

    公开(公告)号：US20160257853A1

    公开(公告)日：2016-09-08

    申请号：US14639598

    申请日：2015-03-05

    Applicant: Cabot Microelectronics Corporation

    Inventor： Brian REISS ,  Dana SAUTER VAN NESS ,  Viet LAM ,  Renhe JIA

    IPC: C09G1/02

    CPC classification number: C09G1/02 ,  C09G1/00 ,  C23F1/14 ,  H01L21/30625 ,  H01L21/32115 ,  H01L21/3212

    Abstract: The invention provides chemical-mechanical polishing compositions and methods of chemically-mechanically polishing a substrate, especially a substrate comprising a silicon oxide layer, with the chemical-mechanical polishing compositions. The polishing compositions comprise first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 75 nm to about 200 nm, and are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. % a functionalized heterocycle, a cationic polymer selected from a quaternary amine, is cationic polyvinyl alcohol, and a cationic cellulose, optionally a carboxylic acid, a pH-adjusting agent, and an aqueous carrier, and have a pH of about 1 to about 6.

    Abstract translation: 本发明提供了化学机械抛光组合物和用化学机械抛光组合物化学机械抛光衬底，特别是包含氧化硅层的衬底的方法。 抛光组合物包括第一磨料颗粒，其中第一磨料颗粒是湿法二氧化铈颗粒，中值粒度为约75nm至约200nm，并且以约0.005wt。的浓度存在于抛光组合物中。 ％至约2wt。 官能化杂环，选自季胺的阳离子聚合物是阳离子聚乙烯醇，阳离子纤维素，任选的羧酸，pH调节剂和水性载体，并且具有约1至约6的pH 。

    MIXED ABRASIVE POLISHING COMPOSITIONS
    5.
    发明申请
    MIXED ABRASIVE POLISHING COMPOSITIONS 有权
    混合磨砂抛光组合物

    公开(公告)号：US20150102012A1

    公开(公告)日：2015-04-16

    申请号：US14051121

    申请日：2013-10-10

    Applicant: Cabot Microelectronics Corporation

    Inventor： Brian REISS ,  Jakub NALASKOWSKI ,  Viet LAM ,  Renhe JIA ,  Jeffrey DYSARD

    IPC: C09G1/02 ,  H01L21/306 ,  H01L21/02

    CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02013 ,  H01L21/30625 ,  H01L21/31053

    Abstract: The invention provides chemical-mechanical polishing compositions and methods of chemically-mechanically polishing a substrate with the chemical-mechanical polishing compositions. The polishing compositions comprise first abrasive particles, wherein the first abrasive particles are ceria particles, second abrasive particles, wherein the second abrasive particles are ceria particles, surface-modified silica particles, or organic particles, a pH-adjusting agent, and an aqueous carrier. The polishing compositions also exhibit multimodal particle size distributions.

    Abstract translation: 本发明提供化学 - 机械抛光组合物和用化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 抛光组合物包括第一磨料颗粒，其中第一磨料颗粒是二氧化铈颗粒，第二磨料颗粒，其中第二磨料颗粒是二氧化铈颗粒，表面改性二氧化硅颗粒或有机颗粒，pH调节剂和含水载体 。 抛光组合物还显示多峰粒度分布。

    POLISHING COMPOSITION CONTAINING CERIA ABRASIVE
    10.
    发明申请
    POLISHING COMPOSITION CONTAINING CERIA ABRASIVE 有权
    包含CERIA磨砂的抛光组合物

    公开(公告)号：US20160257856A1

    公开(公告)日：2016-09-08

    申请号：US14639564

    申请日：2015-03-05

    Applicant: Cabot Microelectronics Corporation

    Inventor： Brian REISS ,  Dana SAUTER VAN NESS ,  Viet LAM ,  Alexander HAINS ,  Steven KRAFT ,  Renhe JIA

    IPC: C09G1/04 ,  B24B37/04

    CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  B24B37/20 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1409 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

    Abstract: The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.

    Abstract translation: 本发明提供了一种化学机械抛光组合物，其包括第一磨料颗粒，其中第一磨料颗粒是湿法二氧化铈颗粒，其中值粒径为约40nm至约100nm，以抛光组合物的浓度存在于抛光组合物中 约0.005重量％ ％至约2wt。 ％，并且具有至少约300nm的粒度分布，官能化杂环，pH调节剂和水性载体，并且其中抛光组合物的pH为约1至约6.本发明还提供了一种 将抛光组合物抛光衬底，特别是包含氧化硅层的衬底的方法。

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