公开(公告)号：US06928751B2

公开(公告)日：2005-08-16

申请号：US10171430

申请日：2002-06-12

申请人： Chad M. Hosack ,  Jeffrey M. Lauerhaas ,  Mario E. Bran ,  Raoul Standt ,  Paul Patel ,  Yi Wu ,  Geert Doumen ,  Paul Mertens

发明人： Chad M. Hosack ,  Jeffrey M. Lauerhaas ,  Mario E. Bran ,  Raoul Standt ,  Paul Patel ,  Yi Wu ,  Geert Doumen ,  Paul Mertens

IPC分类号： B08B3/02 ,  B08B3/12 ,  H01L21/00 ,  H01L21/304 ,  F26B17/00

CPC分类号： H01L21/67051 ,  H01L21/67034 ,  Y10S134/902

摘要： An apparatus includes a rotatable chuck for supporting a substrate and a splash guard. The splash guard surrounds the chuck and surrounds a substrate mounted on the chuck. The splash guard has a portion that deflects fluid being flung off the substrate by centrifugal action in a manner so as to not splash back onto the substrate. The splash guard is moveable between a process position in which the upper annular edge of the splash guard extends above the chuck and a substrate on the chuck, and a load/unload position in which the splash guard is tilted so that one side of the upper annular edge is below an upper edge of the chuck. The movement of the splash guard facilitates loading and unloading of a substrate.

摘要翻译： 一种装置包括用于支撑衬底和防溅罩的可旋转卡盘。 防溅罩围绕卡盘并围绕安装在卡盘上的基板。 防溅罩具有通过离心作用将流体从基板上偏离的部分，以便不会溅回到基板上。 防溅罩可以在其中防溅罩的上部环形边缘在卡盘上方延伸到卡盘上的基板和加载/卸载位置之间移动，在该位置，防溅罩倾斜使得防护罩的上侧 环形边缘在卡盘的上边缘下方。 防溅罩的运动有助于衬底的装载和卸载。

公开(公告)号：US06754980B2

公开(公告)日：2004-06-29

申请号：US10171426

申请日：2002-06-12

申请人： Jeffrey M. Lauerhaas ,  Thomas J. Nicolosi, Jr. ,  Paul Mertens ,  William Fyen

发明人： Jeffrey M. Lauerhaas ,  Thomas J. Nicolosi, Jr. ,  Paul Mertens ,  William Fyen

IPC分类号： F26B1700

CPC分类号： H01L21/67051 ,  H01L21/67034 ,  Y10S134/902

摘要： An apparatus for drying a generally flat substrate that has been cleaned has a rotatable support for supporting the substrate, a substrate drying assembly, and a controller. The substrate drying assembly includes a substrate drying assembly support arm, an outlet for applying liquid to an upper surface of the substrate, and an outlet for applying a drying vapor to the upper surface of the substrate. The substrate drying assembly is configured to position the liquid applying outlet and to position the vapor applying outlet above a portion of the substrate. The controller causes the substrate drying assembly to be retracted over the upper surface of the substrate at a faster rate near a center of the substrate than near a periphery of the substrate.

公开(公告)号：US07100304B2

公开(公告)日：2006-09-05

申请号：US10864927

申请日：2004-06-10

申请人： Jeffrey M. Lauerhaas ,  Thomas J. Nicolosi, Jr. ,  Paul Mertens ,  William Fyen

发明人： Jeffrey M. Lauerhaas ,  Thomas J. Nicolosi, Jr. ,  Paul Mertens ,  William Fyen

IPC分类号： E21B47/022

CPC分类号： H01L21/67051 ,  G01N33/6893 ,  H01L21/67034

摘要： An apparatus for drying a generally flat substrate that has been cleaned has a rotatable support for supporting the substrate, a substrate drying assembly, and a controller. The substrate drying assembly includes a substrate drying assembly support arm, an outlet for applying liquid to an upper surface of the substrate, and an outlet for applying a drying vapor to the upper surface of the substrate. The substrate drying assembly is configured to position the liquid applying outlet and to position the vapor applying outlet above a portion of the substrate. The controller causes the substrate drying assembly to be retracted over the upper surface of the substrate at a faster rate near a center of the substrate than near a periphery of the substrate.

公开(公告)号：US20060089280A1

公开(公告)日：2006-04-27

申请号：US11301130

申请日：2005-12-12

申请人： Rita Vos ,  Paul Mertens ,  Bernd Kolbesen ,  Albrecht Fester ,  Oliver Doll

发明人： Rita Vos ,  Paul Mertens ,  Bernd Kolbesen ,  Albrecht Fester ,  Oliver Doll

IPC分类号： C11D7/32

CPC分类号： H01L21/02052 ,  C11D3/39 ,  C11D3/3947 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047

摘要： The present invention recites a composition comprising a first compound and a second compound. The first compound has the chemical formula (1a), wherein m, n and o are independently from each other equal to 2 or 3; wherein p is equal to 1 or 2; R being a chemical group with the chemical formula (1a′), wherein q is equal to 1, 2 or 3; wherein R1, R2 and R3 are independently selected from the group consisting of hydrogen and an organic group. The second compound has the chemical formula (1c). Metal ions can be present in the solution or in an external medium being contacted with the solution. The present invention can be used for cleaning a semiconductor substrate.

摘要翻译： 本发明描述了包含第一化合物和第二化合物的组合物。 第一种化合物具有化学式（1a），其中m，n和o彼此独立地相当于2或3; 其中p等于1或2; R是具有化学式（1a'）的化学基团，其中q等于1,2或3; 其中R 1，R 2和R 3均独立地选自氢和有机基团。 第二化合物具有化学式（1c）。 金属离子可以存在于溶液中或在与溶液接触的外部介质中。 本发明可用于清洗半导体衬底。

公开(公告)号：US06863795B2

公开(公告)日：2005-03-08

申请号：US10105027

申请日：2002-03-21

申请人： Ivo Teerlinck ,  Paul Mertens

发明人： Ivo Teerlinck ,  Paul Mertens

IPC分类号： C25D5/34 ,  C25D3/02 ,  C25D3/38 ,  C25D3/56 ,  C25D7/12 ,  H01L21/288 ,  H01L21/768 ,  C23C28/02 ,  C25D5/02 ,  C25D5/10 ,  C25D11/32

CPC分类号： C25D7/123 ,  C25D3/02 ,  C25D3/38 ,  C25D3/56 ,  H01L21/2885 ,  H01L21/76877

摘要： The invention is related to a method of plating of a metal layer on a substrate. The method is particularly preferred for the formation of metallization structures for integrated circuits.

摘要翻译： 本发明涉及一种在基片上镀金属层的方法。 该方法特别优选用于集成电路的金属化结构的形成。

公开(公告)号：US20050009207A1

公开(公告)日：2005-01-13

申请号：US10451230

申请日：2001-12-21

申请人： Rita Vos ,  Paul Mertens ,  Albrecht Fester ,  Oliver Doll ,  Bernd Kolbesen

发明人： Rita Vos ,  Paul Mertens ,  Albrecht Fester ,  Oliver Doll ,  Bernd Kolbesen

IPC分类号： B08B3/08 ,  A61K6/00 ,  C01B15/037 ,  C09K3/00 ,  C09K15/30 ,  C11D3/28 ,  C11D3/39 ,  C11D3/395 ,  C11D11/00 ,  D06L3/02 ,  H01L21/304 ,  H01L21/00 ,  H01L21/302 ,  H01L21/461 ,  C07

CPC分类号： C01B15/037 ,  C09K15/30 ,  C11D3/28 ,  C11D3/3902 ,  C11D11/0047 ,  D06L4/12

摘要： The present invention is related to a composition comprising an oxidizing compound and a complexing compound with the chemical formula wherein R1, R2, R3 and R4 are selected from the group consisting of H and any organic side chain. The oxidizing compound can be in the form of an aqueous solution. The complexing compound is for complexing metal ions. Metal ions can be present in the solution or in an external medium being contacted with the solution. The present invention can be used for cleaning a semiconductor substrate.

摘要翻译： 本发明涉及包含氧化化合物和具有化学式的络合化合物的组合物，其中R 1，R 2，R 3和R 4选自H和任何有机侧链。 氧化性化合物可以是水溶液的形式。 络合化合物用于络合金属离子。 金属离子可以存在于溶液中或在与溶液接触的外部介质中。 本发明可用于清洗半导体衬底。

公开(公告)号：US06261377B1

公开(公告)日：2001-07-17

申请号：US09159679

申请日：1998-09-24

申请人： Paul Mertens ,  Mark Meuris ,  Marc Heyns

发明人： Paul Mertens ,  Mark Meuris ,  Marc Heyns

IPC分类号： B08B700

CPC分类号： H01L21/67028 ,  H01L21/67034 ,  Y10S134/902

摘要： The present invention is related to a method of removing particles and a liquid from a surface of a substrate using at least one rotating cleaning pad. The approach, according to the present invention, is a technique wherein a sharp liquid-vapor boundary is created on the surface of the substrate adjacent to the last wetted rotating cleaning pad of a plurality of rotating cleaning pads and particularly between this last wetted rotating cleaning pad and a first edge of the substrate.

摘要翻译： 本发明涉及使用至少一个旋转清洁垫从基板的表面去除颗粒和液体的方法。 根据本发明的方法是一种技术，其中在与多个旋转清洁垫的最后润湿的旋转清洁垫相邻的衬底的表面上形成尖锐的液 - 气边界，特别是在最后一次润湿的旋转清洁 衬垫和衬底的第一边缘。

公开(公告)号：US07521408B2

公开(公告)日：2009-04-21

申请号：US11301130

申请日：2005-12-12

申请人： Rita Vos ,  Paul Mertens ,  Bernd Kolbesen ,  Albrecht Fester ,  Oliver Doll

发明人： Rita Vos ,  Paul Mertens ,  Bernd Kolbesen ,  Albrecht Fester ,  Oliver Doll

IPC分类号： C11D7/32

CPC分类号： H01L21/02052 ,  C11D3/39 ,  C11D3/3947 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047

摘要： The present invention recites a composition comprising a first compound and a second compound. The first compound has the chemical formula ( 1a), wherein m, n and o are independently from each other equal to 2 or 3; wherein p is equal to 1 or 2; R being a chemical group with the chemical formula (1a′), wherein q is equal to 1, 2 or 3; wherein R1, R2 and R3 are independently selected from the group consisting of hydrogen and an organic group. The second compound has the chemical formula (1c). Metal ions can be present in the solution or in an external medium being contacted with the solution. The present invention can be used for cleaning a semiconductor substrate.

摘要翻译： 本发明描述了包含第一化合物和第二化合物的组合物。 第一种化合物具有化学式（1a），其中m，n和o彼此独立地相当于2或3; 其中p等于1或2; R是具有化学式（1a'）的化学基团，其中q等于1,2或3; 其中R1，R2和R3独立地选自氢和有机基团。 第二化合物具有化学式（1c）。 金属离子可以存在于溶液中或在与溶液接触的外部介质中。 本发明可用于清洗半导体衬底。

公开(公告)号：US06592676B1

公开(公告)日：2003-07-15

申请号：US09467528

申请日：1999-12-20

申请人： Paul Mertens ,  Lee Loewenstein ,  Guy Vereecke

发明人： Paul Mertens ,  Lee Loewenstein ,  Guy Vereecke

IPC分类号： B08B704

CPC分类号： H01L21/02052 ,  C11D3/02 ,  C11D3/3947 ,  C11D7/02 ,  C11D7/261 ,  C11D11/0047

摘要： The present invention is related to a method for reducing the metal contamination on a surface of a semiconductor substrate wherein said substrate is submitted to a wet cleaning or rinsing process in a solution capable of oxidising said surface and containing a substance strongly dissociating in said solution whereby creating an amount of ions of at least one species in said solution, at least one of the ion species being such that the ions of the species are binding to the oxidised surface in such a way that said amount of ions is substantially reducing the amount of metal ions bound to the oxidised surface. Wet treatments such as rinsing, cleaning, in wet benches, batches and single wafer wet-cleaning equipment and single or double-side cleaning or etching applications can use the method of the present invention.

摘要翻译： 本发明涉及一种用于减少半导体衬底表面上的金属污染的方法，其中所述衬底在能够氧化所述表面并含有在所述溶液中强烈解离的物质的溶液中进行湿式清洁或漂洗过程，由此 在所述溶液中产生至少一种物质的离子的量，所述离子种类中的至少一种使得所述物质的离子与氧化的表面结合，使得所述离子的量显着减少 金属离子与氧化表面结合。可以使用本发明的方法来处理例如冲洗，清洗，湿式长凳，批次和单晶片湿式清洁设备以及单面或双面清洁或蚀刻应用。

公开(公告)号：US06303522B1

公开(公告)日：2001-10-16

申请号：US09193887

申请日：1998-11-18

申请人： Paul Mertens ,  Marc Heyns

发明人： Paul Mertens ,  Marc Heyns

IPC分类号： H01L2131

CPC分类号： C30B29/06 ,  C23C8/12 ,  C23C8/22 ,  C30B33/005 ,  H01L21/02046 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02301 ,  H01L21/02312 ,  H01L21/31662

摘要： The present invention is related to an efficient thermal oxidation process that allows the controlled growth of in-situ cleaned high quality thin oxides on a silicon-containing substrate. Said oxidation is performed in an ambient comprising at least the reaction products of a chloro-carbon precursor and ozone. This thermal oxidation is preferably executed at low temperatures, being preferably below 500° C., in order to limit the in-diffusion of metal surface contaminants is limited. The present invention is further related to the decomposition of organic chloro-carbon precursors at low temperatures by the introduction of ozone prior to the actual oxidation step.

摘要翻译： 本发明涉及一种有效的热氧化工艺，其允许在含硅衬底上原位清洁的高质量薄氧化物的受控生长。 所述氧化在至少包含氯 - 碳前体和臭氧的反应产物的环境中进行。 该热氧化优选在低温下进行，优选低于500℃，以限制金属表面污染物的扩散不足。 本发明进一步涉及在实际氧化步骤之前通过引入臭氧在低温下分解有机氯 - 碳前体。