公开(公告)号：US08882290B2

公开(公告)日：2014-11-11

申请号：US11798521

申请日：2007-05-15

申请人： Min-Hsun Hsieh ,  Chia-Liang Hsu ,  Chien-Fu Huang ,  Chih-Chiang Lu ,  Chun-Yi Wu

发明人： Min-Hsun Hsieh ,  Chia-Liang Hsu ,  Chien-Fu Huang ,  Chih-Chiang Lu ,  Chun-Yi Wu

IPC分类号： F21K2/00 ,  H01L25/075 ,  F21K99/00

CPC分类号： H01L25/0753 ,  F21K9/00 ,  F21K9/62 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-mixing type light-emitting apparatus comprises a plurality of light-emitting diodes (LEDs) formed on a transparent carrier, wherein each of the LEDs with a transparent substrate emits light of a distinct color when driven, and the light beams generated from the LEDs are mixed to form a specific color. The transparent carrier setting forth in the present invention provides a mixing zone underlying the plurality of LEDs for the light beams to mix uniformly so as to improve the light-mixing efficiency of the light-emitting apparatus and shorten the mixing distance.

摘要翻译： 光混合型发光装置包括形成在透明载体上的多个发光二极管（LED），其中具有透明基板的每个LED在被驱动时发射不同颜色的光，并且由 LED被混合以形成特定的颜色。 在本发明中提出的透明载体提供了用于光束的多个LED下面的混合区域，以便均匀地混合，以便提高发光装置的光混合效率并缩短混合距离。

公开(公告)号：US20090173963A1

公开(公告)日：2009-07-09

申请号：US12318552

申请日：2008-12-31

申请人： Chia-Liang Hsu ,  Chih-Chiang Lu ,  Chien-Fu Huang ,  Chun-Yi Wu

发明人： Chia-Liang Hsu ,  Chih-Chiang Lu ,  Chien-Fu Huang ,  Chun-Yi Wu

IPC分类号： H01L33/00

CPC分类号： H01L33/385 ,  H01L24/24 ,  H01L24/82 ,  H01L33/20 ,  H01L33/32 ,  H01L33/486 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2924/00

摘要： The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure.

摘要翻译： 本发明涉及一种发光装置。 本发明示出了一个实施例中的垂直发光器件，其包括以下元件：导电衬底包括通孔，设置在衬底的第一表面上的图案化半导体结构，第一焊盘和第二焊盘 设置在所述基板的第二表面上，穿过所述半导体结构层电连接的所述通孔的导电线以及所述通孔的至少一个侧壁上的绝缘层将所述导线与所述基板绝缘。 本发明示出了另一实施例中的水平发光器件，其包括以下元件：衬底包括第一倾斜侧壁，设置在衬底的第一表面上的图案化半导体结构，第一导线设置在至少 基板的第一倾斜侧壁和电连接图案化的半导体结构。

公开(公告)号：US20110254046A1

公开(公告)日：2011-10-20

申请号：US13174183

申请日：2011-06-30

申请人： Chia-Liang Hsu ,  Chih-Chiang Lu ,  Chien-Fu Huang ,  Chun-Yi Wu

发明人： Chia-Liang Hsu ,  Chih-Chiang Lu ,  Chien-Fu Huang ,  Chun-Yi Wu

IPC分类号： H01L33/62

CPC分类号： H01L33/385 ,  H01L24/24 ,  H01L24/82 ,  H01L33/20 ,  H01L33/32 ,  H01L33/486 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2924/00

摘要： The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure.

摘要翻译： 本发明涉及一种发光装置。 本发明示出了一个实施例中的垂直发光器件，其包括以下元件：导电衬底包括通孔，设置在衬底的第一表面上的图案化半导体结构，第一焊盘和第二焊盘 设置在所述基板的第二表面上，穿过所述半导体结构层电连接的所述通孔的导电线以及所述通孔的至少一个侧壁上的绝缘层将所述导线与所述基板绝缘。 本发明示出了另一实施例中的水平发光器件，其包括以下元件：衬底包括第一倾斜侧壁，设置在衬底的第一表面上的图案化半导体结构，第一导线设置在至少 基板的第一倾斜侧壁和电连接图案化的半导体结构。

公开(公告)号：US07973331B2

公开(公告)日：2011-07-05

申请号：US12318552

申请日：2008-12-31

申请人： Chia-Liang Hsu ,  Chih-Chiang Lu ,  Chien-Fu Huang ,  Chun-Yi Wu

发明人： Chia-Liang Hsu ,  Chih-Chiang Lu ,  Chien-Fu Huang ,  Chun-Yi Wu

IPC分类号： H01L33/00

CPC分类号： H01L33/385 ,  H01L24/24 ,  H01L24/82 ,  H01L33/20 ,  H01L33/32 ,  H01L33/486 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2924/00

摘要： The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure.

摘要翻译： 本发明涉及一种发光装置。 本发明示出了一个实施例中的垂直发光器件，其包括以下元件：导电衬底包括通孔，设置在衬底的第一表面上的图案化半导体结构，第一焊盘和第二焊盘 设置在所述基板的第二表面上，穿过所述半导体结构层电连接的所述通孔的导电线以及所述通孔的至少一个侧壁上的绝缘层将所述导线与所述基板绝缘。 本发明示出了另一实施例中的水平发光器件，其包括以下元件：衬底包括第一倾斜侧壁，设置在衬底的第一表面上的图案化半导体结构，第一导线设置在至少 基板的第一倾斜侧壁和电连接图案化的半导体结构。

公开(公告)号：US08513699B2

公开(公告)日：2013-08-20

申请号：US13174183

申请日：2011-06-30

申请人： Chia-Liang Hsu ,  Chih-Chiang Lu ,  Chien-Fu Huang ,  Chun-Yi Wu

发明人： Chia-Liang Hsu ,  Chih-Chiang Lu ,  Chien-Fu Huang ,  Chun-Yi Wu

IPC分类号： H01L33/62

CPC分类号： H01L33/385 ,  H01L24/24 ,  H01L24/82 ,  H01L33/20 ,  H01L33/32 ,  H01L33/486 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2924/00

摘要： The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate. The present invention illustrates a horizontal light-emitting device in another embodiment, comprising the following elements: a substrate includes a first tilted sidewall, a patterned semiconductor structure disposed on a first surface of the substrate, a first conductive line is disposed on at least the first tilted sidewall of the substrate and connecting electrically the patterned semiconductor structure.

公开(公告)号：US08530927B2

公开(公告)日：2013-09-10

申请号：US13608750

申请日：2012-09-10

申请人： Chien-Fu Huang ,  Min-Hsun Hsieh ,  Chih-Chiang Lu ,  Chia-Liang Hsu ,  Shih-I Chen

发明人： Chien-Fu Huang ,  Min-Hsun Hsieh ,  Chih-Chiang Lu ,  Chia-Liang Hsu ,  Shih-I Chen

IPC分类号： H01L33/60 ,  H01L33/62

CPC分类号： H01L33/24 ,  H01L24/05 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/387 ,  H01L33/62 ,  H01L2224/05552 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and having a first width, and a first length greater than the first width, and a second branch extending from the first branch and having a second width larger than the first width, and a second length greater than the second width; and an electrical contact structure between the second branch and the semiconductor light-emitting stack.

摘要翻译： 发光装置包括半导体发光叠层; 形成在半导体发光叠层上的电流注入部分; 具有从所述电流注入部分发射并具有第一宽度和大于所述第一宽度的第一长度的第一分支的延伸部分和从所述第一分支延伸并具有大于所述第一宽度的第二宽度的第二分支，以及 大于第二宽度的第二长度; 以及第二分支和半导体发光叠层之间的电接触结构。

公开(公告)号：US08110845B2

公开(公告)日：2012-02-07

申请号：US13181222

申请日：2011-07-12

申请人： Chia-Liang Hsu ,  Min-Hsun Hsieh ,  Chih-Chiang Lu ,  Chien-Fu Huang

发明人： Chia-Liang Hsu ,  Min-Hsun Hsieh ,  Chih-Chiang Lu ,  Chien-Fu Huang

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/405 ,  H01L33/46

摘要： The application is related to a method of forming a substrate of a light-emitting diode by composite electroplating. The application illustrates a light-emitting diode comprising the following elements: a light-emitting epitaxy structure, a reflective layer disposed on the light-emitting epitaxy structure, a seed layer disposed on the reflective layer, a composite electroplating substrate disposed on the seed layer by composite electroplating, and a protection layer disposed on the composite electroplating substrate.

摘要翻译： 该应用涉及通过复合电镀形成发光二极管的基板的方法。 本发明示出了包括以下元件的发光二极管：发光外延结构，设置在发光外延结构上的反射层，设置在反射层上的种子层，设置在种子层上的复合电镀基板 通过复合电镀，以及设置在复合电镀基板上的保护层。

公开(公告)号：US20110108879A1

公开(公告)日：2011-05-12

申请号：US13009491

申请日：2011-01-19

申请人： Chien-Fu HUANG ,  Min-Hsun Hsieh ,  Chih-Chiang Lu ,  Chia-Liang Hsu ,  Shih-I Chen

发明人： Chien-Fu HUANG ,  Min-Hsun Hsieh ,  Chih-Chiang Lu ,  Chia-Liang Hsu ,  Shih-I Chen

IPC分类号： H01L33/22

CPC分类号： H01L33/24 ,  H01L24/05 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/387 ,  H01L33/62 ,  H01L2224/05552 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack.

摘要翻译： 一种发光器件，包括半导体发光堆叠，包括发光区域; 形成在所述半导体发光叠层上的电极，其中所述电极包括电流注入部分和延伸部分; 形成在电流注入部分和半导体发光叠层之间并形成在延伸部分的第一部分和半导体发光叠层之间的电流阻挡结构; 以及形成在所述延伸部分的第二部分和所述半导体发光叠层之间的电接触结构。

公开(公告)号：US08263998B2

公开(公告)日：2012-09-11

申请号：US13009491

申请日：2011-01-19

申请人： Chien-Fu Huang ,  Min-Hsun Hsieh ,  Chih-Chiang Lu ,  Chia-Liang Hsu ,  Shih-I Chen

发明人： Chien-Fu Huang ,  Min-Hsun Hsieh ,  Chih-Chiang Lu ,  Chia-Liang Hsu ,  Shih-I Chen

IPC分类号： H01L33/22

CPC分类号： H01L33/24 ,  H01L24/05 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/387 ,  H01L33/62 ,  H01L2224/05552 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack.

摘要翻译： 一种发光器件，包括半导体发光堆叠，包括发光区域; 形成在所述半导体发光叠层上的电极，其中所述电极包括电流注入部分和延伸部分; 形成在电流注入部分和半导体发光叠层之间并形成在延伸部分的第一部分和半导体发光叠层之间的电流阻挡结构; 以及形成在所述延伸部分的第二部分和所述半导体发光叠层之间的电接触结构。

公开(公告)号：US07906795B2

公开(公告)日：2011-03-15

申请号：US12437908

申请日：2009-05-08

申请人： Chien-Fu Huang ,  Min-Hsun Hsieh ,  Chih-Chiang Lu ,  Chia-Liang Hsu ,  Shih-I Chen

发明人： Chien-Fu Huang ,  Min-Hsun Hsieh ,  Chih-Chiang Lu ,  Chia-Liang Hsu ,  Shih-I Chen

IPC分类号： H01L33/00

CPC分类号： H01L33/24 ,  H01L24/05 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/387 ,  H01L33/62 ,  H01L2224/05552 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack.

摘要翻译： 一种发光器件，包括半导体发光堆叠，包括发光区域; 形成在所述半导体发光叠层上的电极，其中所述电极包括电流注入部分和延伸部分; 形成在电流注入部分和半导体发光叠层之间并形成在延伸部分的第一部分和半导体发光叠层之间的电流阻挡结构; 以及形成在所述延伸部分的第二部分和所述半导体发光叠层之间的电接触结构。