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公开(公告)号：US20150069430A1
公开(公告)日：2015-03-12
申请号：US14120297
申请日：2014-05-14
Applicant: Cree, Inc.
Inventor： Brian T. Collins , Matthew Donofrio , Kevin W. Haberern , Bennett Langsdorf , Anoop Mathew , Harry A. Seibel , Iliya Todorov , Bradley E. Williams
Abstract: A phosphor-converted light emitting device includes a light emitting diode (LED) on a substrate, where the LED comprises a stack of epitaxial layers comprising a p-n junction. A wavelength conversion material is in optical communication with the LED. According to one embodiment of the phosphor-converted light emitting device, a selective filter is adjacent to the wavelength conversion material, and the selective filter comprises a plurality of nanoparticles for absorbing light from the LED not down-converted by the wavelength conversion material. According to another embodiment of the phosphor-converted light emitting device, a perpendicular distance between a perimeter of the LED on the substrate and an edge of the substrate is at least about 24 microns. According to another embodiment of the phosphor-converted light emitting device, the LED comprises a mirror layer on one or more sidewalls thereof for reducing light leakage through the sidewalls.
Abstract translation: 磷光体转换发光器件包括在衬底上的发光二极管（LED），其中LED包括一叠包括p-n结的外延层。 波长转换材料与LED光学通信。 根据荧光体转换发光器件的一个实施例，选择滤光器与波长转换材料相邻，并且选择滤光器包括多个纳米颗粒，用于吸收未被波长转换材料下转换的LED的光。 根据磷光体转换发光器件的另一实施例，衬底上LED的周边与衬底的边缘之间的垂直距离为至少约24微米。 根据荧光体转换发光器件的另一实施例，LED包括在其一个或多个侧壁上的镜层，用于减少通过侧壁的光泄漏。
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2.发明申请公开(公告)号：US20190172971A1
公开(公告)日：2019-06-06
申请号：US16267636
申请日：2019-02-05
Applicant: Cree, Inc.
Inventor： Thomas A. Kuhr , Robert David Schmidt , Daniel Carleton Driscoll , Brian T. Collins
CPC classification number: H01L33/0025 , H01L33/02 , H01L33/06 , H01L33/32
Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.
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公开(公告)号：US10224454B2
公开(公告)日：2019-03-05
申请号：US15970959
申请日：2018-05-04
Applicant: Cree, Inc.
Inventor： Thomas A. Kuhr , Robert David Schmidt , Daniel Carleton Driscoll , Brian T. Collins
Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.
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4.发明申请公开(公告)号：US20180254377A1
公开(公告)日：2018-09-06
申请号：US15970959
申请日：2018-05-04
Applicant: Cree, Inc.
Inventor： Thomas A. Kuhr , Robert David Schmidt , Daniel Carleton Driscoll , Brian T. Collins
CPC classification number: H01L33/0025 , H01L33/02 , H01L33/06 , H01L33/32
Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.
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5.发明申请公开(公告)号：US20200381581A1
公开(公告)日：2020-12-03
申请号：US16998651
申请日：2020-08-20
Applicant: Cree, Inc.
Inventor： Thomas A. Kuhr , Robert David Schmidt , Daniel Carleton Driscoll , Brian T. Collins
Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include Ill nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.
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Patent Agency Ranking
公开(公告)号：US20190203117A1
公开(公告)日：2019-07-04
申请号：US16296818
申请日：2019-03-08
Applicant: Cree, Inc.
Inventor： Brian T. Collins , Christopher P. Hussell , David T. Emerson , Ronan P. Le Toquin
IPC: C09K11/77 , C04B35/597 , C04B35/581 , C04B35/584 , C09K11/08 , C09K11/02 , C04B35/58
CPC classification number: C09K11/7734 , C04B35/58 , C04B35/581 , C04B35/584 , C04B35/591 , C04B35/593 , C04B35/5935 , C04B35/597 , C04B2235/3224 , C04B2235/3852 , C04B2235/3865 , C04B2235/3869 , C04B2235/3873 , C04B2235/445 , C09K11/025 , C09K11/0883 , C09K11/7728
Abstract: A method is disclosed for forming a blended phosphor composition. The method includes the steps of firing precursor compositions that include europium and nitrides of at least calcium, strontium and aluminum, in a refractory metal crucible and in the presence of a gas that precludes the formation of nitride compositions between the nitride starting materials and the refractory metal that forms the crucible. The resulting compositions can include phosphors that convert frequencies in the blue portion of the visible spectrum into frequencies in the red portion of the visible spectrum.
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公开(公告)号：US09985168B1
公开(公告)日：2018-05-29
申请号：US14546524
申请日：2014-11-18
Applicant: Cree, Inc.
Inventor： Thomas A. Kuhr , Robert David Schmidt , Daniel Carleton Driscoll , Brian T. Collins
CPC classification number: H01L33/0025 , H01L33/06 , H01L33/32
Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include III nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layers, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.
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公开(公告)号：US11088295B2
公开(公告)日：2021-08-10
申请号：US16998651
申请日：2020-08-20
Applicant: Cree, Inc.
Inventor： Thomas A. Kuhr , Robert David Schmidt , Daniel Carleton Driscoll , Brian T. Collins
Abstract: Group III nitride based light emitting diode (LED) structures include multiple quantum wells with barrier-well units that include Ill nitride interface layers. Each interface layer may have a thickness of no greater than about 30% of an adjacent well layer, and a comparatively low concentration of indium or aluminum. One or more interface layers may be present in a barrier-well unit. Multiple barrier-well units having different properties may be provided in a single active region.
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公开(公告)号：US10767111B2
公开(公告)日：2020-09-08
申请号：US16296818
申请日：2019-03-08
Applicant: Cree, Inc.
Inventor： Brian T. Collins , Christopher P. Hussell , David T. Emerson , Ronan P. Le Toquin
IPC: C04B35/58 , C04B35/581 , C04B35/584 , C04B35/591 , C04B35/593 , C04B35/597 , C09K11/02 , C09K11/08 , C09K11/77
Abstract: A method is disclosed for forming a blended phosphor composition. The method includes the steps of firing precursor compositions that include europium and nitrides of at least calcium, strontium and aluminum, in a refractory metal crucible and in the presence of a gas that precludes the formation of nitride compositions between the nitride starting materials and the refractory metal that forms the crucible. The resulting compositions can include phosphors that convert frequencies in the blue portion of the visible spectrum into frequencies in the red portion of the visible spectrum.
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公开(公告)号：US10283681B2
公开(公告)日：2019-05-07
申请号：US14120297
申请日：2014-05-14
Applicant: Cree, Inc.
Inventor： Brian T. Collins , Matthew Donofrio , Kevin W. Haberern , Bennett Langsdorf , Anoop Mathew , Harry A. Seibel , Iliya Todorov , Bradley E. Williams
Abstract: A phosphor-converted light emitting device includes a light emitting diode (LED) on a substrate, where the LED comprises a stack of epitaxial layers comprising a p-n junction. A wavelength conversion material is in optical communication with the LED. According to one embodiment of the phosphor-converted light emitting device, a selective filter is adjacent to the wavelength conversion material, and the selective filter comprises a plurality of nanoparticles for absorbing light from the LED not down-converted by the wavelength conversion material. According to another embodiment of the phosphor-converted light emitting device, a perpendicular distance between a perimeter of the LED on the substrate and an edge of the substrate is at least about 24 microns. According to another embodiment of the phosphor-converted light emitting device, the LED comprises a mirror layer on one or more sidewalls thereof for reducing light leakage through the sidewalls.
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