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公开(公告)号:US20250069967A1
公开(公告)日:2025-02-27
申请号:US18928536
申请日:2024-10-28
Applicant: DENSO CORPORATION
Inventor: Akinori SAKAKIBARA , Takanori KAWASHIMA , Shingo TSUCHIMOCHI , Shoichiro OMAE
IPC: H01L23/13 , H01L23/31 , H01L23/498 , H01L25/065 , H01L25/07
Abstract: A semiconductor device includes a first insulating circuit board, a semiconductor element on the first insulating circuit board, and an encapsulating body. The first insulating circuit board includes a first insulating substrate, and a first inner conductor layer, and a first outer conductor layer. The first inner conductor layer is electrically connected to a first electrode of the semiconductor element inside of the encapsulating body. The first outer conductor layer is exposed from a surface of the encapsulating body. The first inner conductor layer has a first thin-wall portion a thickness of which reduces toward an outer side, along an outer peripheral edge of the first inner conductor layer with a first width. The first outer conductor layer (i) does not have or (ii) has a second thin-wall portion along the outer peripheral edge of the first outer conductor layer with a second width.
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公开(公告)号:US20220278006A1
公开(公告)日:2022-09-01
申请号:US17746492
申请日:2022-05-17
Applicant: DENSO CORPORATION
Inventor: Akinori SAKAKIBARA , Takanori KAWASHIMA , Shingo TSUCHIMOCHI , Shoichiro OMAE
IPC: H01L23/13 , H01L23/498 , H01L23/31
Abstract: A semiconductor device includes a first insulating circuit board, a semiconductor element on the first insulating circuit board, and an encapsulating body. The first insulating circuit board includes a first insulating substrate, and a first inner conductor layer, and a first outer conductor layer. The first inner conductor layer is electrically connected to a first electrode of the semiconductor element inside of the encapsulating body. The first outer conductor layer is exposed from a surface of the encapsulating body. The first inner conductor layer has a first thin-wall portion a thickness of which reduces toward an outer side, along an outer peripheral edge of the first inner conductor layer with a first width. The first outer conductor layer (i) does not have or (ii) has a second thin-wall portion along the outer peripheral edge of the first outer conductor layer with a second width.
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公开(公告)号:US20160225690A1
公开(公告)日:2016-08-04
申请号:US14916136
申请日:2014-08-29
Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA , DENSO CORPORATION
Inventor: Takuya KADOGUCHI , Takahiro HIRANO , Takanori KAWASHIMA , Tomomi OKUMURA , Masayoshi NISHIHATA
IPC: H01L23/367 , H01L29/739 , H01L29/861 , H01L25/07
CPC classification number: H01L23/49568 , H01L23/051 , H01L23/3107 , H01L23/36 , H01L23/3672 , H01L23/49513 , H01L23/49524 , H01L23/49537 , H01L23/49548 , H01L23/49562 , H01L23/49575 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/83 , H01L25/072 , H01L29/7397 , H01L29/861 , H01L2224/2612 , H01L2224/26175 , H01L2224/29111 , H01L2224/32014 , H01L2224/32057 , H01L2224/32245 , H01L2224/33 , H01L2224/33181 , H01L2224/40137 , H01L2224/45124 , H01L2224/45147 , H01L2224/48247 , H01L2224/49171 , H01L2224/73215 , H01L2224/73265 , H01L2224/83007 , H01L2224/83101 , H01L2224/83203 , H01L2224/83385 , H01L2224/83439 , H01L2224/83444 , H01L2224/83815 , H01L2224/92242 , H01L2224/92247 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00014 , H01L2224/83 , H01L2224/85 , H01L2924/00
Abstract: A semiconductor device includes: opposed first and second metal plates; a plurality of semiconductor elements each interposed between the first metal plate and the second metal plate; a metal block interposed between the first metal plate and each of the semiconductor elements; a solder member interposed between the first metal plate and the metal block and connecting the first metal plate to the metal block; and a resin molding sealing the semiconductor elements and the metal block. A face of the first metal plate, which is on an opposite side of a face of the first metal plate to which the metal block is connected via the solder member, is exposed from the resin molding. The first metal plate has a groove formed along an outer periphery of a region in which the solder member is provided, the groove collectively surrounding the solder member.
Abstract translation: 一种半导体器件包括:相对的第一和第二金属板; 多个半导体元件,各自插入在所述第一金属板和所述第二金属板之间; 介于所述第一金属板和所述半导体元件之间的金属块; 插入在第一金属板和金属块之间并将第一金属板连接到金属块的焊料构件; 以及密封半导体元件和金属块的树脂模制件。 第一金属板的与第一金属板的通过焊料部件连接的第一金属板的面相反一侧的面从树脂成形体露出。 第一金属板具有沿着设置有焊料构件的区域的外周形成的槽,槽围绕焊料构件。
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公开(公告)号:US20240421132A1
公开(公告)日:2024-12-19
申请号:US18817993
申请日:2024-08-28
Applicant: DENSO CORPORATION
Inventor: Shingo TSUCHIMOCHI , Takanori KAWASHIMA
IPC: H01L25/07 , H01L23/00 , H01L23/31 , H01L23/495
Abstract: A semiconductor device includes a semiconductor element, a substrate, a bonding material, a main terminal and a plating film. The substrate has an insulating base member, a front surface metal body on a front surface of the insulating base member and electrically connected to a main electrode of the semiconductor element, and a back surface metal body on a back surface of the insulating base member. The bonding material is interposed between the main electrode and the front surface metal body. The main terminal has a solid-state bonded portion bonded to the front surface metal body. The plating film is disposed on the front surface metal body and the main terminal to cover the solid-state bonded portion. The main terminal includes a wide terminal having one solid-state bonded portion and having an overlapping region a width of which is greater than the solid-state bonded portion.
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公开(公告)号:US20240258264A1
公开(公告)日:2024-08-01
申请号:US18597486
申请日:2024-03-06
Applicant: DENSO CORPORATION
Inventor: Takanori KAWASHIMA , Shinji HIRAMITSU , Tomomi OKUMURA
IPC: H01L23/00 , H01L23/498 , H01L25/00 , H01L25/07
CPC classification number: H01L24/48 , H01L23/49811 , H01L23/49844 , H01L24/73 , H01L25/072 , H01L25/50 , H01L24/32 , H01L2224/32225 , H01L2224/48175 , H01L2224/73265 , H01L2924/1815
Abstract: A semiconductor device includes a semiconductor element, a first wiring member electrically connected to a first main electrode on a first surface of the semiconductor element, a second wiring member electrically connected to a second main electrode on a second surface of the semiconductor element, a signal terminal connected to a signal pad on the second surface through a bonding wire. The second wiring member includes an insulating base material, a front surface metal body on a front surface of the insulating base material adjacent to the semiconductor element, and a back surface metal body on a back surface. An end portion of the front surface metal body is located between an end portion of a bonding target to which the front surface metal body is bonded and an end portion of the semiconductor element in an arrangement direction of the semiconductor element and the signal terminal.
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公开(公告)号:US20240087978A1
公开(公告)日:2024-03-14
申请号:US18504487
申请日:2023-11-08
Applicant: DENSO CORPORATION
Inventor: Takanori KAWASHIMA , Tomomi OKUMURA , Shunsuke ARAI , Naruhiro INOUE
IPC: H01L23/373 , H01L23/00 , H01L23/31 , H01L25/07
CPC classification number: H01L23/3735 , H01L23/3142 , H01L24/32 , H01L24/48 , H01L24/73 , H01L25/072 , H02P27/06
Abstract: A semiconductor device includes semiconductor elements arranged in a first direction, an arm connection portion disposed between the semiconductor elements in the first direction, first and second power supply terminals disposed on the same side in the first direction, first and second substrates interposing the semiconductor elements therebetween, and a sealing body. The second substrate includes an insulating base member, a front-face metal body and a back-face metal body. The front-face metal body includes a second power supply wiring and a second relay wiring. The second power supply wiring includes a base portion on which the second element is arranged, and a pair of extending portions extending from the base portion in the first direction. The second relay wiring is disposed between the extending portions in a second direction, so that the second relay wiring and the base portion satisfy a relationship of L1
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公开(公告)号:US20240079292A1
公开(公告)日:2024-03-07
申请号:US18504296
申请日:2023-11-08
Applicant: DENSO CORPORATION
Inventor: Shingo TSUCHIMOCHI , Hirotoshi KUSAMA , Takanori KAWASHIMA
IPC: H01L23/373 , H01L23/00 , H01L23/31 , H01L25/07
CPC classification number: H01L23/3735 , H01L23/3142 , H01L24/32 , H01L24/48 , H01L24/73 , H01L25/072 , H02P27/06
Abstract: A semiconductor device includes: a semiconductor element having main electrodes on opposite faces in a plate thickness direction; a substrate having an insulating base member, a front-face metal body disposed on a front face of the insulating base member and electrically connected to one of the main electrodes of the semiconductor element, and a back-face metal body disposed on a back face of the insulating base member; a bonding member; and a metal member connected to the front-face metal body through the bonding member. The metal member has an opposing face opposing an upper face of the front-face metal body and a receiving portion disposed adjacent to the opposing face to provide a receiving space to receive the bonding member therein. The bonding member is received in the receiving space in a state where the opposing face is in contact with the upper face of the front-face metal body.
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公开(公告)号:US20220270948A1
公开(公告)日:2022-08-25
申请号:US17740926
申请日:2022-05-10
Applicant: DENSO CORPORATION
Inventor: Hiroshi UKEGAWA , Takanori KAWASHIMA , Akinori SAKAKIBARA
IPC: H01L23/367 , H01L23/373
Abstract: The semiconductor device includes a semiconductor module and a cooler. The semiconductor module includes an insulator substrate, an inner conductor film disposed on a first surface of the insulator substrate, a semiconductor element connected to the inner conductor film, a sealing body sealing the inner conductor film and the semiconductor element, and an outer conductor film disposed on a second surface of the insulator substrate and exposed from a surface of the sealing body. The cooler is disposed adjacent to the outer conductor film via a thermal interface material having fluidity. The outer conductor film has a protruding portion or a recessed portion on a surface being in contact with the thermal interface material.
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公开(公告)号:US20240032265A1
公开(公告)日:2024-01-25
申请号:US18481534
申请日:2023-10-05
Applicant: DENSO CORPORATION
Inventor: Yuta HASHIMOTO , Tomohisa SANO , Shoichiro OMAE , Takanori KAWASHIMA
IPC: H05K7/20
CPC classification number: H05K7/20927
Abstract: A power card, which is to be aligned in a height direction with a cooling unit in which a refrigerant flows in an inner space extending in a lateral direction, includes a plurality of switches, a resin portion, and a plurality of external connection terminals. The switches are aligned in a vertical direction perpendicular to each of the lateral direction and the height direction. The resin portion covers each of the switches. The external connection terminals are electrically connected to the respective switches and each have a portion exposed from the resin portion.
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公开(公告)号:US20250062180A1
公开(公告)日:2025-02-20
申请号:US18938667
申请日:2024-11-06
Applicant: DENSO CORPORATION
Inventor: Hiroshi UKEGAWA , Takanori KAWASHIMA , Akinori SAKAKIBARA
IPC: H01L23/367 , H01L23/373
Abstract: The semiconductor device includes a semiconductor module and a cooler. The semiconductor module includes an insulator substrate, an inner conductor film disposed on a first surface of the insulator substrate, a semiconductor element connected to the inner conductor film, a sealing body sealing the inner conductor film and the semiconductor element, and an outer conductor film disposed on a second surface of the insulator substrate and exposed from a surface of the sealing body. The cooler is disposed adjacent to the outer conductor film via a thermal interface material having fluidity. The outer conductor film has a protruding portion or a recessed portion on a surface being in contact with the thermal interface material.
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