Synchronous address latching for memory arrays
    1.
    发明授权
    Synchronous address latching for memory arrays 失效
    存储器阵列的同步地址锁存

    公开(公告)号:US5586081A

    公开(公告)日:1996-12-17

    申请号:US447629

    申请日:1995-05-23

    IPC分类号: G06F12/06 G11C8/18 G11C8/00

    摘要: Synchronous address latching circuitry for a memory device having at least first and second banks of memory arrays is described. The latching circuitry has a master latch to receive and store an external address. A first slave latch is also included to receive and store the external address from the master latch if the external address belongs to the first bank and to provide the external address as a first address to the first bank. A second slave latch is included to receive and store the external address from the master latch if the external address belongs to the second bank and to provide the external address as a second address to the second bank.

    摘要翻译: 描述了具有至少第一和第二组存储器阵列的存储器件的同步地址锁存电路。 锁存电路具有用于接收和存储外部地址的主锁存器。 如果外部地址属于第一个存储区,并且将外部地址作为第一个地址提供给第一个存储区,还包括一个第一从锁存器,用于从主存储器接收和存储外部地址。 如果外部地址属于第二组,则包括第二从锁存器以接收并存储来自主锁存器的外部地址,并将外部地址作为第二地址提供给第二存储体。

    Synchronous address latching for memory arrays
    2.
    发明授权
    Synchronous address latching for memory arrays 失效
    存储器阵列的同步地址锁存

    公开(公告)号:US5497355A

    公开(公告)日:1996-03-05

    申请号:US253842

    申请日:1994-06-03

    IPC分类号: G06F12/06 G11C8/18 G11C8/00

    摘要: Synchronous address latching circuitry for a memory device having at least first and second banks of memory arrays is described. The latching circuitry has first and second master latches to receive and store an external address. A first slave latch is also included to receive and store the external address from the first master latch if the external address belongs to the first bank and to provide the external address as a first address to the first bank. A second slave latch is included to receive and store the external address from the second master latch if the external address belongs to the second bank and to provide the external address as a second address to the second bank.

    摘要翻译: 描述了具有至少第一和第二组存储器阵列的存储器件的同步地址锁存电路。 锁存电路具有用于接收和存储外部地址的第一和第二主锁存器。 如果外部地址属于第一个存储区并且将外部地址作为第一个地址提供给第一个存储体,则还包括一个第一从锁存器,用于从第一主锁存器接收和存储外部地址。 如果外部地址属于第二组,并且将外部地址作为第二地址提供给第二组,则包括第二从锁存器以从第二主锁存器接收和存储外部地址。

    External tester control for flash memory
    3.
    发明授权
    External tester control for flash memory 失效
    外部测试仪控制闪存

    公开(公告)号:US5410544A

    公开(公告)日:1995-04-25

    申请号:US085641

    申请日:1993-06-30

    IPC分类号: G11C29/48 G06F11/00

    CPC分类号: G11C29/48

    摘要: An apparatus for testing a unit comprising an internal processor coupled to a register by an internal bus. The internal processor is programmed so that it can execute an algorithm. When executed, the algorithm performs an operation on the unit. The register is for storing a state datum. The internal bus is used by the internal processor to access the state datum when the internal processor is executing the algorithm. The testing apparatus comprises an external processor disposed external to the unit and an interface and switch disposed on the unit. The interface is coupled to the internal and external processors and is for receiving a plurality of commands from the external processor. The commands include an internal processor command and an open trap command. If issued, the internal processor command causes the internal processor to execute the algorithm. The switch is coupled to the interface and coupled between the internal processor and the internal bus. If the interface receives the open trap command, the switch permits the external processor to access the state datum of the register.

    摘要翻译: 一种用于测试单元的装置,包括通过内部总线耦合到寄存器的内部处理器。 内部处理器被编程为可以执行一个算法。 执行时,算法对单元执行操作。 寄存器用于存储状态数据。 当内部处理器执行算法时,内部总线由内部处理器使用来访问状态数据。 测试装置包括设置在该单元外部的外部处理器和设置在该单元上的接口和开关。 该接口耦合到内部和外部处理器,并用于从外部处理器接收多个命令。 这些命令包括内部处理器命令和打开的陷阱命令。 如果发出内部处理器命令,内部处理器将执行该算法。 该开关耦合到接口并耦合在内部处理器和内部总线之间。 如果接口接收到打开的trap命令,则交换机允许外部处理器访问寄存器的状态数据。

    METHOD AND APPARATUS FOR MEMORY REDUNDANCY IN A MICROPROCESSOR
    4.
    发明申请
    METHOD AND APPARATUS FOR MEMORY REDUNDANCY IN A MICROPROCESSOR 有权
    微处理器中存储器冗余的方法和装置

    公开(公告)号:US20090316460A1

    公开(公告)日:2009-12-24

    申请号:US12141873

    申请日:2008-06-18

    IPC分类号: G11C29/00 G11C15/00

    摘要: An apparatus for redundancy of a memory array includes a primary memory array including a plurality of memory cells, one or more of which are defective. A redundant array includes a CAM array that includes a plurality of memory cells. The CAM array is addressed by the address of a defective memory location within the primary memory array and provides a match identification and a resource identification. The redundant array also includes a translation array wherein an offset to configure an input/output multiplexer is stored. The redundant array also includes a redundant data array including a plurality of memory cells wherein one or more memory cells of the redundant data array are used instead of one or more defective memory cells of the primary array.

    摘要翻译: 存储器阵列的冗余设备包括主存储器阵列,其包括多个存储器单元,其中一个或多个是有缺陷的。 冗余阵列包括包括多个存储单元的CAM阵列。 CAM阵列由主存储器阵列内的缺陷存储器位置的地址寻址,并提供匹配标识和资源标识。 冗余阵列还包括平移阵列,其中存储用于配置输入/输出多路复用器的偏移。 冗余阵列还包括冗余数据阵列,其包括多个存储器单元,其中使用冗余数据阵列的一个或多个存储器单元来代替主阵列的一个或多个缺陷存储器单元。

    Closed-loop delay compensation for driver
    5.
    发明申请
    Closed-loop delay compensation for driver 有权
    驱动器的闭环延迟补偿

    公开(公告)号:US20050285642A1

    公开(公告)日:2005-12-29

    申请号:US10880983

    申请日:2004-06-29

    申请人: Mamun Rashid

    发明人: Mamun Rashid

    IPC分类号: H03L7/06 H03L7/081 H04L25/02

    摘要: A device includes a number of output circuits to drive a number of output signals. The output signals have timing relationship among each other. The device also includes a control loop circuit serving as a feedback loop to adjust any mismatch between the timing relationships of the output signals.

    摘要翻译: 一种装置包括多个输出电路来驱动多个输出信号。 输出信号之间具有定时关系。 该装置还包括用作反馈回路的控制回路电路,以调整输出信号的定时关系之间的任何失配。

    Method and apparatus for memory redundancy in a microprocessor
    7.
    发明授权
    Method and apparatus for memory redundancy in a microprocessor 有权
    微处理器中存储器冗余的方法和装置

    公开(公告)号:US07684267B2

    公开(公告)日:2010-03-23

    申请号:US12141873

    申请日:2008-06-18

    IPC分类号: G11C7/00

    摘要: An apparatus for redundancy of a memory array includes a primary memory array including a plurality of memory cells, one or more of which are defective. A redundant array includes a CAM array that includes a plurality of memory cells. The CAM array is addressed by the address of a defective memory location within the primary memory array and provides a match identification and a resource identification. The redundant array also includes a translation array wherein an offset to configure an input/output multiplexer is stored. The redundant array also includes a redundant data array including a plurality of memory cells wherein one or more memory cells of the redundant data array are used instead of one or more defective memory cells of the primary array.

    摘要翻译: 存储器阵列的冗余设备包括主存储器阵列,其包括多个存储器单元,其中一个或多个是有缺陷的。 冗余阵列包括包括多个存储单元的CAM阵列。 CAM阵列由主存储器阵列内的缺陷存储器位置的地址寻址,并提供匹配标识和资源标识。 冗余阵列还包括平移阵列,其中存储用于配置输入/输出多路复用器的偏移。 冗余阵列还包括冗余数据阵列,其包括多个存储器单元,其中使用冗余数据阵列的一个或多个存储器单元来代替主阵列的一个或多个缺陷存储器单元。

    Programmable direct interpolating delay locked loop
    10.
    发明申请
    Programmable direct interpolating delay locked loop 失效
    可编程直接内插延迟锁定环

    公开(公告)号:US20050140416A1

    公开(公告)日:2005-06-30

    申请号:US10746105

    申请日:2003-12-24

    申请人: Mamun Rashid

    发明人: Mamun Rashid

    摘要: Embodiments of the invention provide for a DLL architecture including a coarse-fine type arrangement using one loop for non-continuous strobe that can be also be adapted for continuous clocks as well. In particular, a reference loop establishes precise coarse unit delay. A slave delay line duplicates unit delay. A phase interpolator interpolates between unit delay to produce fine delay.

    摘要翻译: 本发明的实施例提供了一种DLL架构,其包括使用用于非连续选通的一个循环的粗细型布置,该循环也可以适用于连续时钟。 特别地,参考循环建立精确的粗略单位延迟。 从属延迟线重复单位延迟。 相位插值器在单位延迟之间插值以产生精细延迟。