摘要:
An apparatus for testing a unit comprising an internal processor coupled to a register by an internal bus. The internal processor is programmed so that it can execute an algorithm. When executed, the algorithm performs an operation on the unit. The register is for storing a state datum. The internal bus is used by the internal processor to access the state datum when the internal processor is executing the algorithm. The testing apparatus comprises an external processor disposed external to the unit and an interface and switch disposed on the unit. The interface is coupled to the internal and external processors and is for receiving a plurality of commands from the external processor. The commands include an internal processor command and an open trap command. If issued, the internal processor command causes the internal processor to execute the algorithm. The switch is coupled to the interface and coupled between the internal processor and the internal bus. If the interface receives the open trap command, the switch permits the external processor to access the state datum of the register.
摘要:
A method and circuitry are described that permit one to utilize a partially functional integrated circuit memory. A memory array is segregated into separate blocks that can each be isolated to minimize the amount of the memory array rendered unusable by a defect. Circuitry is also provided to program memory cells within the array to one of at least three amounts of charge and thereby increase the amount of storage provided by the remaining functional blocks.
摘要:
A flash memory device having a page buffer circuit providing a shared resource between a flash array controller circuit and a user. The page buffer circuit comprises a Plane A and a Plane B, wherein each of the planes A and B is a static random access memory array. The page buffer circuit further comprises a mode control circuit for enabling access to the planes A and B over a host bus in a user mode and access to the planes A and B by the flash array controller in a flash array controller mode.
摘要:
Synchronous address latching circuitry for a memory device having at least first and second banks of memory arrays is described. The latching circuitry has a master latch to receive and store an external address. A first slave latch is also included to receive and store the external address from the master latch if the external address belongs to the first bank and to provide the external address as a first address to the first bank. A second slave latch is included to receive and store the external address from the master latch if the external address belongs to the second bank and to provide the external address as a second address to the second bank.
摘要:
An apparatus for redundancy of a memory array includes a primary memory array including a plurality of memory cells, one or more of which are defective. A redundant array includes a CAM array that includes a plurality of memory cells. The CAM array is addressed by the address of a defective memory location within the primary memory array and provides a match identification and a resource identification. The redundant array also includes a translation array wherein an offset to configure an input/output multiplexer is stored. The redundant array also includes a redundant data array including a plurality of memory cells wherein one or more memory cells of the redundant data array are used instead of one or more defective memory cells of the primary array.
摘要:
A device includes a number of output circuits to drive a number of output signals. The output signals have timing relationship among each other. The device also includes a control loop circuit serving as a feedback loop to adjust any mismatch between the timing relationships of the output signals.
摘要:
A flash memory device having a page buffer circuit with special testing modes. The page buffer circuit comprises a plane A and a plane B, each comprising a static random access memory array. The page buffer circuit further comprises a mode control circuit that maps the plane A and the plane B as a contiguous extended memory space accessible over a host bus. The page buffer circuit also maps the plane A and the plane B as a control store for a flash array controller of the flash memory device.
摘要:
Synchronous address latching circuitry for a memory device having at least first and second banks of memory arrays is described. The latching circuitry has first and second master latches to receive and store an external address. A first slave latch is also included to receive and store the external address from the first master latch if the external address belongs to the first bank and to provide the external address as a first address to the first bank. A second slave latch is included to receive and store the external address from the second master latch if the external address belongs to the second bank and to provide the external address as a second address to the second bank.
摘要:
An apparatus for redundancy of a memory array includes a primary memory array including a plurality of memory cells, one or more of which are defective. A redundant array includes a CAM array that includes a plurality of memory cells. The CAM array is addressed by the address of a defective memory location within the primary memory array and provides a match identification and a resource identification. The redundant array also includes a translation array wherein an offset to configure an input/output multiplexer is stored. The redundant array also includes a redundant data array including a plurality of memory cells wherein one or more memory cells of the redundant data array are used instead of one or more defective memory cells of the primary array.
摘要:
An integrated circuit includes clock deskew circuitry. The deskew circuitry includes multiple loop circuits to align a received clock with a data eye, and to reduce the effects of clock drift caused by voltage and temperature variations.