Light-emitting Diode Device
    2.
    发明申请
    Light-emitting Diode Device 有权
    发光二极管装置

    公开(公告)号:US20150243865A1

    公开(公告)日:2015-08-27

    申请号:US14422673

    申请日:2013-07-22

    Applicant: EPCOS AG

    CPC classification number: H01L33/644 H01L33/642 H01L33/647

    Abstract: A light-emitting diode device has a first carrier and at least one light-emitting diode chip, which is arranged on the first carrier. The first carrier has at least one first and one second carrier part, wherein the light-emitting diode chip rests only on the first carrier part. Furthermore, the first and second carrier parts each have a thermal conductivity. The thermal conductivity of the first carrier part is at least 1.5 times the thermal conductivity of the second carrier part. The first carrier part is surrounded laterally by the second carrier part.

    Abstract translation: 发光二极管装置具有第一载体和布置在第一载体上的至少一个发光二极管芯片。 第一载体具有至少一个第一和第二载体部分,其中发光二极管芯片仅在第一载体部分上。 此外,第一和第二载体部分各自具有导热性。 第一载体部分的热导率为第二载体部分的热导率的至少1.5倍。 第一载体部分被第二载体部分横向包围。

    Light-emitting diode device
    5.
    发明授权
    Light-emitting diode device 有权
    发光二极管装置

    公开(公告)号:US09337408B2

    公开(公告)日:2016-05-10

    申请号:US14422673

    申请日:2013-07-22

    Applicant: EPCOS AG

    CPC classification number: H01L33/644 H01L33/642 H01L33/647

    Abstract: A light-emitting diode device has a first carrier and at least one light-emitting diode chip, which is arranged on the first carrier. The first carrier has at least one first and one second carrier part, wherein the light-emitting diode chip rests only on the first carrier part. Furthermore, the first and second carrier parts each have a thermal conductivity. The thermal conductivity of the first carrier part is at least 1.5 times the thermal conductivity of the second carrier part. The first carrier part is surrounded laterally by the second carrier part.

    Abstract translation: 发光二极管装置具有第一载体和布置在第一载体上的至少一个发光二极管芯片。 第一载体具有至少一个第一和第二载体部分,其中发光二极管芯片仅在第一载体部分上。 此外,第一和第二载体部分各自具有导热性。 第一载体部分的热导率为第二载体部分的热导率的至少1.5倍。 第一载体部分被第二载体部分横向包围。

    Chip with Protection Function and Method for Producing Same
    7.
    发明申请
    Chip with Protection Function and Method for Producing Same 有权
    具有保护功能的芯片及其制造方法

    公开(公告)号:US20170011827A1

    公开(公告)日:2017-01-12

    申请号:US15113397

    申请日:2015-01-02

    Applicant: EPCOS AG

    Abstract: A chip and a method for manufacturing a chip are disclosed. In an embodiment, the chip includes a varistor layer composed of zinc oxide, a multilayered electrode structure which realizes a varistor function in the varistor layer and at least two solderable or bondable external contacts on a first main surface of the varistor layer. The chip further includes a glass layer disposed on the first main surface leaving only the external contacts uncovered, wherein the glass layer includes, as main constituents, oxides of Si and/or Ge, B and K, which in total have at least 70% by weight of the constituents of the glass layer, and wherein the glass layer is substantially free of Al, Ga, Cr and Ti.

    Abstract translation: 公开了一种芯片和芯片的制造方法。 在一个实施例中,芯片包括由氧化锌组成的可变电阻层,在压敏电阻层中实现变阻器功能的多层电极结构以及可变阻抗层的第一主表面上的至少两个可焊接或可接合的外部触点。 芯片还包括设置在第一主表面上的玻璃层,仅留下未覆盖的外部触点,其中玻璃层主要包括Si和/或Ge,B和K的氧化物,其总共具有至少70% 的玻璃层的成分,并且其中玻璃层基本上不含Al,Ga,Cr和Ti。

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