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公开(公告)号：US20240295822A1
公开(公告)日：2024-09-05
申请号：US18642711
申请日：2024-04-22
Applicant: FUJIFILM Corporation
Inventor： Tetsuya KAMIMURA , Tetsuya SHIMIZU , Satoru MURAYAMA
CPC classification number: G03F7/32 , G03F7/027 , G03F7/0397 , G03F7/322 , G03F7/40 , G03F7/70925 , H01L21/0206
Abstract: A pattern forming method including forming a film using an actinic ray-sensitive or radiation-sensitive resin composition; exposing the formed film; and treating the exposed film using a treatment liquid for manufacturing a semiconductor. The treatment liquid for manufacturing a semiconductor includes a quaternary ammonium compound represented by the following Formula (N); at least one additive selected from the group consisting of an anionic surfactant, a nonionic surfactant, a cationic surfactant, and a chelating agent; and water. The treatment liquid for manufacturing a semiconductor includes one kind or two or more kinds of metal atoms selected from the group consisting of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni, and Zn. A total mass of the metal atoms is 1 mass ppt to 1 mass ppm with respect to the sum of a total mass of the additive and the total mass of the metal atoms.
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公开(公告)号：US20210139231A1
公开(公告)日：2021-05-13
申请号：US17139045
申请日：2020-12-31
Applicant: FUJIFILM Corporation
Inventor： Tetsuya KAMIMURA , Satomi TAKAHASHI , Tadashi OOMATSU , Tetsuya SHIMIZU
Abstract: The present invention provides a chemical liquid having excellent defect suppressing properties. The present invention further provides a chemical liquid storage body containing the chemical liquid. The chemical liquid of the present invention is a chemical liquid containing a compound other than an alkane and an alkene, and one or more organic solvents selected from the group consisting of decane and undecane, in which the chemical liquid further contains one or more organic components selected from the group consisting of alkanes having 12 to 50 carbon atoms and alkenes having 12 to 50 carbon atoms, and a content of the organic component is 0.10 to 1,000,000 mass ppt with respect to a total mass of the chemical liquid.
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公开(公告)号：US20200368692A1
公开(公告)日：2020-11-26
申请号：US16991225
申请日：2020-08-12
Applicant: FUJIFILM Corporation
Inventor： Tetsuya SHIMIZU , Tetsuya KAMIMURA , Tadashi OMATSU , Satomi TAKAHASHI
IPC: B01D61/58 , B01D65/02 , B01D61/18 , B01D61/08 , B01D69/02 , B01D69/12 , B01D71/36 , B01D71/26 , B01D71/56 , B01D3/14 , H01L21/67
Abstract: A filtering device is for obtaining a chemical liquid by purifying a liquid to be purified, and has an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path which includes the filter A and the filter B arranged in series between the inlet portion and the outlet portion and extends from the inlet portion to the outlet portion, in which the filter A includes at least one kind of porous membrane selected from the group consisting of a first porous membrane having a porous base material made of polytetrafluoroethylene and a non-crosslinked coating which is formed to cover the porous base material and contains a perfluorosulfonic acid polymer and a second porous membrane containing polytetrafluoroethylene blended with a perfluorosulfonic acid polymer.
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4.发明申请公开(公告)号：US20150179471A1
公开(公告)日：2015-06-25
申请号：US14624860
申请日：2015-02-18
Applicant: FUJIFILM Corporation
Inventor： Atsushi MIZUTANI , Akiko YOSHII , Tetsuya KAMIMURA , Tetsuya SHIMIZU
IPC: H01L21/311 , H01L21/28
CPC classification number: H01L21/31111 , C09K13/08 , H01L21/28158 , H01L21/30604
Abstract: A method of producing a semiconductor substrate product, having the steps of: providing an etching liquid containing water, a hydrofluoric acid compound, and a water-soluble polymer; and applying the etching liquid to a semiconductor substrate, the semiconductor substrate having a silicon layer and a silicon oxide layer, the silicon layer containing an impurity, and thereby selectively etching the silicon oxide layer.
Abstract translation: 一种制造半导体衬底产品的方法，具有以下步骤：提供含有水，氢氟酸化合物和水溶性聚合物的蚀刻液; 并且将蚀刻液施加到半导体衬底，所述半导体衬底具有硅层和氧化硅层，所述硅层含有杂质，从而选择性地蚀刻氧化硅层。
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公开(公告)号：US20220317563A1
公开(公告)日：2022-10-06
申请号：US17839432
申请日：2022-06-13
Applicant: FUJIFILM Corporation
Inventor： Tetsuya SHIMIZU , Tsukasa YAMANAKA , Yukihisa KAWADA
IPC: G03F1/68 , G03F7/40 , G03F7/32 , G03F7/11 , G03F7/039 , G03F7/16 , G03F7/00 , G03F1/86 , G03F7/38 , H01J49/10
Abstract: A container for storing a chemical fluid for manufacturing an electronic material, in which after an inspection solution charges the container and stored at 25° C. for 30 days, a sum of a concentration of particulate metal including an iron atom, a concentration of particulate metal including a copper atom, and a concentration of particulate metal including a zinc atom which are measured by a Single Particle ICP-MASS method in the inspection solution is 100 ppt or less.
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Patent Agency Ranking
公开(公告)号：US20220179320A1
公开(公告)日：2022-06-09
申请号：US17676235
申请日：2022-02-21
Applicant: FUJIFILM Corporation
Inventor： Tetsuya SHIMIZU , Tetsuya KAMIMURA
IPC: G03F7/32 , G03F7/30 , G03F7/16 , G03F7/40 , H01L21/027 , B65D25/14 , B65D85/00 , H01L21/308
Abstract: A storage container storing a treatment liquid for manufacturing a semiconductor is provided, wherein the occurrence of defects on the semiconductor, such as particles, is suppressed and a fine resist pattern or a fine semiconductor element is manufactured. The storage container includes a storage portion that stores the treatment liquid, wherein the treatment liquid includes one kind or two or more kinds of metal atoms selected from Cu, Fe, and Zn, and a total content of particulate metal that is a metal component derived from the metal atoms and that is a nonionic metal component present in the treatment liquid as a solid without being dissolved is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid.
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7.发明申请公开(公告)号：US20130244443A1
公开(公告)日：2013-09-19
申请号：US13770282
申请日：2013-02-19
Applicant: FUJIFILM CORPORATION
Inventor： Atsushi MIZUTANI , Tetsuya KAMIMURA , Akiko YOSHII , Tetsuya SHIMIZU
IPC: C09K13/08 , H01L21/306
CPC classification number: C09K13/08 , H01L21/28158 , H01L21/30604 , H01L21/31111
Abstract: A method for manufacturing a semiconductor substrate product having: providing an etching liquid containing water, a hydrofluoric acid compound and an organic solvent, and applying the etching liquid to a semiconductor substrate, the semiconductor substrate having a silicon layer and a silicon oxide layer, the silicon layer containing an impurity, and thereby selectively etching the silicon oxide layer.
Abstract translation: 一种制造半导体衬底产品的方法，其具有：提供含有水，氢氟酸化合物和有机溶剂的蚀刻液，并将蚀刻液施加到半导体衬底，所述半导体衬底具有硅层和氧化硅层， 含有杂质的硅层，从而选择性地蚀刻氧化硅层。
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公开(公告)号：US20240219359A1
公开(公告)日：2024-07-04
申请号：US18603775
申请日：2024-03-13
Applicant: FUJIFILM Corporation
Inventor： Tetsuya SHIMIZU , Michihiro SHIRAKAWA , Satomi TAKAHASHI
CPC classification number: G01N30/7206 , G03F7/32 , G01N2030/025
Abstract: An object of the present invention is to provide a method for inspecting a treatment liquid to determine whether the treatment liquid, when used as a developer or a rinsing liquid, allows formation of a resist pattern with reduced variation in line width. Another object of the present invention is to provide a method for producing a treatment liquid.
The method for inspecting a treatment liquid according to the present invention is a method for inspecting a treatment liquid including an aliphatic hydrocarbon solvent and has a step A1 of acquiring measurement data of a content of an acid component in the treatment liquid, the acid component being at least one selected from the group consisting of carboxylic acids having a hydrocarbon group having 1 to 3 carbon atoms and formic acid, and a step A2 of determining whether the measurement data acquired in the step A1 falls within a preset allowable range.-
公开(公告)号：US20240103374A1
公开(公告)日：2024-03-28
申请号：US18522052
申请日：2023-11-28
Applicant: FUJIFILM Corporation
Inventor： Tetsuya SHIMIZU , Tetsuya KAMIMURA
IPC: G03F7/32 , B65D25/14 , B65D85/00 , G03F7/16 , G03F7/30 , G03F7/40 , H01L21/027 , H01L21/308
CPC classification number: G03F7/32 , B65D25/14 , B65D85/00 , B65D85/70 , G03F7/16 , G03F7/30 , G03F7/322 , G03F7/325 , G03F7/40 , H01L21/0271 , H01L21/0274 , H01L21/308
Abstract: An object of the present invention is to provide a treatment liquid for manufacturing a semiconductor, a pattern forming method using the same, and a method of manufacturing an electronic device using the same. The treatment liquid for manufacturing a semiconductor comprising: one kind or two or more kinds of metal atoms selected from Cu, Fe, and Zn, wherein a total content of particulate metal including at least one kind of the metal atoms is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid for manufacturing a semiconductor.
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公开(公告)号：US20210132503A1
公开(公告)日：2021-05-06
申请号：US17144259
申请日：2021-01-08
Applicant: FUJIFILM Corporation
Inventor： Tadashi OOMATSU , Tetsuya KAMIMURA , Tetsuya SHIMIZU , Satomi TAKAHASHI , Akihiko OHTSU
Abstract: An object of the present invention is to provide a chemical liquid which exhibits excellent defect inhibition performance even after long-term preservation, a kit, a pattern forming method, a chemical liquid manufacturing method, and a chemical liquid storage body. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing an organic solvent, an acid component, and a metal component. The content of the acid component is equal to or greater than 1 mass ppt and equal to or smaller than 15 mass ppm with respect to the total mass of the chemical liquid. The content of the metal component is 0.001 to 100 mass ppt with respect to the total mass of the chemical liquid.
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