公开(公告)号：US11162057B2

公开(公告)日：2021-11-02

申请号：US16127690

申请日：2018-09-11

Applicant: FUJIMI INCORPORATED

Inventor： Tsutomu Yoshino ,  Ayano Yamazaki ,  Shogo Onishi ,  Yasuto Ishida ,  Satoru Yarita

IPC: C11D7/08 ,  C11D7/26 ,  C11D7/34 ,  C11D7/36 ,  H01L21/02 ,  B08B3/04 ,  C11D11/00 ,  C11D3/37

Abstract: A composition for surface treatment according to the present invention is used for treating the surface of an object to be polished after polishing, the composition for surface treatment including: a water-soluble polymer having a constituent unit derived from glycerin; an acid; and water, wherein the composition for surface treatment has a pH of 5 or lower.

公开(公告)号：US11203731B2

公开(公告)日：2021-12-21

申请号：US16491845

申请日：2018-01-19

Applicant: FUJIMI INCORPORATED

Inventor： Yasuto Ishida

IPC: C11D7/34 ,  C11D1/14 ,  C11D1/22 ,  C11D1/28 ,  C11D1/29 ,  C11D1/34 ,  C11D3/37 ,  C11D11/00 ,  H01L21/02

Abstract: The purpose of the present invention is to provide means for sufficiently removing residues on a surface of an object which has been polished including silicon nitride, silicon oxide, or polysilicon.
Provided is a composition for surface treatment including an anionic surfactant having a molecular weight of 1,000 or less and water, the composition having a pH of less than 7, wherein a ratio of a molecular weight of a hydrophilic moiety to a molecular weight of a hydrophobic moiety (the molecular weight of the hydrophilic moiety/the molecular weight of the hydrophobic moiety) of the anionic surfactant is 0.4 or more (in which the hydrophobic moiety is a hydrocarbon group having 4 or more carbon atoms and the hydrophilic moiety is a part excluding the hydrophobic moiety and a counterion), and the composition for surface treatment is used for surface treatment of an object which has been polished including at least one selected from the group consisting of silicon nitride, silicon oxide, and polysilicon.

公开(公告)号：US09486892B2

公开(公告)日：2016-11-08

申请号：US14440208

申请日：2013-10-29

Applicant: FUJIMI INCORPORATED

Inventor： Shogo Onishi ,  Yasuto Ishida ,  Tatsuhiko Hirano

IPC: B24B37/04 ,  C09G1/02 ,  H01L21/321 ,  C09K3/14

CPC classification number: B24B37/044 ,  C09G1/02 ,  C09K3/1445 ,  C09K3/1463 ,  H01L21/3212

Abstract: [Problem] Provided is a polishing composition which is suitable for polishing a polishing object having a metal wiring layer and capable of diminishing the step defect while maintaining a high polishing rate.[Solution] Provided is a polishing composition used in polishing a polishing object having a metal wiring layer, which contains a metal corrosion inhibitor, a complexing agent, a surfactant, and water and in which the solid surface energy of the polishing object surface after polishing the polishing object using the polishing composition is 30 mN/m or less, and the surfactant is preferably an anionic surfactant.

Abstract translation: [解决方案]提供一种抛光组合物，其用于抛光具有金属布线层的抛光对象，该金属布线层含有金属腐蚀抑制剂，络合剂，表面活性剂和水，并且其中抛光后抛光对象表面的固体表面能 使用研磨用组合物的研磨对象为30mN / m以下，表面活性剂优选为阴离子表面活性剂。

公开(公告)号：US12249513B2

公开(公告)日：2025-03-11

申请号：US17881283

申请日：2022-08-04

Applicant: Fujimi Incorporated

Inventor： Tsutomu Yoshino ,  Yasuto Ishida

IPC: H01L21/306 ,  H01L21/02

Abstract: The present invention provides a means capable of sufficiently removing a residue containing inorganic oxide abrasive grains present on the surface of a polished object to be polished containing silicon nitride. One aspect of the present invention relates to a surface treatment method for reducing a residue containing inorganic oxide abrasive grains on a surface of a polished object to be polished containing silicon nitride using a composition for surface treatment, wherein the composition for surface treatment contains a zeta potential adjusting agent having a negatively charged functional group and having a viscosity of an aqueous solution having a concentration of 20% by mass at 25° C. of 10 mPa·s or more and a dispersing medium, and the surface treatment method includes controlling a zeta potential of the silicon nitride and a zeta potential of the inorganic oxide abrasive grains each to −30 mV or less using the composition for surface treatment.

公开(公告)号：US11692137B2

公开(公告)日：2023-07-04

申请号：US17486008

申请日：2021-09-27

Applicant: FUJIMI INCORPORATED

Inventor： Tsutomu Yoshino ,  Ayano Yamazaki ,  Satoru Yarita ,  Shogo Onishi ,  Yasuto Ishida

IPC: C09K13/06 ,  H01L21/321 ,  C09G1/02 ,  C09G1/04 ,  H01L21/02 ,  H01L21/306 ,  C09K13/00 ,  C09K3/14 ,  H01L21/3105

CPC classification number: C09K13/06 ,  C09G1/02 ,  C09G1/04 ,  C09K3/1436 ,  C09K13/00 ,  H01L21/0206 ,  H01L21/02057 ,  H01L21/02065 ,  H01L21/02068 ,  H01L21/30604 ,  H01L21/31053 ,  H01L21/3212

Abstract: An intermediate raw material according to the present invention includes a charge control agent having a critical packing parameter of 0.6 or more and a dispersing medium and a pH of the intermediate raw material is less than 7.

公开(公告)号：US10093834B2

公开(公告)日：2018-10-09

申请号：US15514130

申请日：2015-08-28

Applicant: FUJIMI INCORPORATED

Inventor： Yasuto Ishida

IPC: C09G1/02 ,  B24B37/04 ,  C09K3/14 ,  H01L21/321 ,  H01L21/3105

Abstract: There are provided a polishing composition and a method for polishing capable of, when a substrate including polysilicon is polished, limiting the polishing rate of the polysilicon, and selectively polishing a silicon compound other than the polysilicon, such as silicon nitride. The polishing composition used includes abrasives, an organic acid and a conjugate base of the organic acid.

公开(公告)号：US11466234B2

公开(公告)日：2022-10-11

申请号：US17011371

申请日：2020-09-03

Applicant: FUJIMI INCORPORATED

Inventor： Tsutomu Yoshino ,  Shogo Onishi ,  Yasuto Ishida

IPC: C11D3/37 ,  C11D1/00 ,  C11D11/00 ,  H01L21/321 ,  B08B3/08 ,  H01L21/02 ,  H01L21/3105 ,  B08B1/00

Abstract: To provide a means capable of sufficiently removing organic residues present on the surface of a polishing object after polishing containing silicon oxide or polysilicon.
A surface treatment composition contains a polymer having a constituent unit represented by Formula (1) below and water and is used for treating the surface of a polishing object after polishing, in which, in Formula (1) above, R1 is a hydrocarbon group having 1 to 5 carbon atoms and R2 is a hydrogen atom or a hydrocarbon group having 1 to 3 carbon atoms.

公开(公告)号：US11028340B2

公开(公告)日：2021-06-08

申请号：US16491349

申请日：2018-02-19

Applicant: FUJIMI INCORPORATED

Inventor： Yasuto Ishida ,  Tsutomu Yoshino ,  Shogo Onishi ,  Yukinobu Yoshizaki

IPC: C11D3/37 ,  C11D1/00 ,  C09G1/04 ,  C11D11/00 ,  C11D17/00 ,  H01L21/02 ,  H01L21/306

Abstract: An objective of the present invention is to provide a means for sufficiently removing residues remaining on a surface of a polished object to be polished.
A composition for surface treatment containing a polymer compound having at least one ionic functional group selected from the group consisting of a sulfonic acid (salt) group, a phosphoric acid (salt) group, a phosphoric acid (salt) group, and an amino group, and water, in which pH is less than 7, and the polymer compound has a pKa of 3 or less and an ionic functional group density of more than 10%.

公开(公告)号：US10954479B2

公开(公告)日：2021-03-23

申请号：US16320432

申请日：2017-06-13

Applicant: FUJIMI INCORPORATED

Inventor： Yasuto Ishida

IPC: C11D7/32 ,  C11D7/36 ,  H01L21/02 ,  C11D3/36 ,  H01L21/3105 ,  C11D7/34 ,  C11D11/00

Abstract: The present invention relates to a composition for surface treatment including: a phosphonic acid compound containing two or more nitrogen atoms; and water, wherein the pH is 6 or less, and the composition for surface treatment is used for treating a surface of a polishing-completed object to be polished having a tungsten-containing layer. According to the present invention, there is provided a means capable of inhibiting dissolution of the tungsten-containing layer provided on a polishing-completed object to be polished when a surface treatment is performed.

公开(公告)号：US11702570B2

公开(公告)日：2023-07-18

申请号：US16797177

申请日：2020-02-21

Applicant: FUJIMI INCORPORATED

Inventor： Ryota Mae ,  Tsutomu Yoshino ,  Shogo Onishi ,  Hirofumi Ikawa ,  Yasuto Ishida

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: An object of the present invention is to provide a new polishing composition that contributes to improving the quality of a device.
There is provided a polishing composition containing: an abrasive grain having an organic acid immobilized on a surface thereof; a first water-soluble polymer having a sulfonic acid group or a group having a salt thereof, or a carboxyl group or a group having a salt thereof; a second water-soluble polymer different from the first water-soluble polymer; a nonionic surfactant; and an aqueous carrier, wherein the polishing composition is used for polishing an object to be polished.