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    METHOD OF MANUFACTURING A 3 COLOR LED INTEGRATED SI CMOS DRIVER WAFER USING DIE TO WAFER BONDING APPROACH
    1.
    发明申请
    METHOD OF MANUFACTURING A 3 COLOR LED INTEGRATED SI CMOS DRIVER WAFER USING DIE TO WAFER BONDING APPROACH 审中-公开

    公开(公告)号：US20190019915A1

    公开(公告)日：2019-01-17

    申请号：US15650427

    申请日：2017-07-14

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Srinivasa BANNA ,  Deepak NAYAK ,  Luke ENGLAND ,  Rahul AGARWAL

    IPC: H01L31/18 ,  H01L27/15

    Abstract: Methods of forming an integrated RGB LED and Si CMOS driver wafer and the resulting devices are provided. Embodiments include providing a plurality of first color die over a CMOS wafer, each first color die being laterally separated with a first oxide and electrically connected to the CMOS wafer; providing a second color die above each first color die, each second color die being separated from each other with a second oxide, bonded to a first color die, and electrically connected to the CMOS wafer through the bonded first color die; removing a portion of each second color die to expose a portion of each bonded first color die; forming a conformal TCO layer over each first and second color die and on a side surface of each second color die and oxide; forming a PECVD oxide layer over the CMOS wafer; and planarizing the PECVD oxide layer.

    NANOWIRE FORMATION METHODS
    4.
    发明申请
    NANOWIRE FORMATION METHODS 审中-公开

    公开(公告)号：US20190221708A1

    公开(公告)日：2019-07-18

    申请号：US16366811

    申请日：2019-03-27

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Srinivasa BANNA ,  Deepak NAYAK

    IPC: H01L33/06 ,  H01L27/15 ,  H01L33/18 ,  H01L33/00 ,  H01L33/24 ,  H01L25/16 ,  H01L33/42

    Abstract: Methods of forming an integrated InGaN/GaN or AlInGaP/InGaP LED on Si CMOS for RGB colors and the resulting devices are provided. Embodiments include forming trenches having a v-shaped bottom through an oxide layer and a portion of a substrate; forming AlN or GaAs in the v-shaped bottom; forming a n-GaN or n-InGaP pillar on the AlN or GaAs through and above the first oxide layer; forming an InGaN/GaN MQW or AlInGaP/InGaP MQW over the n-GaN or n-InGaP pillar; forming a p-GaN or p-InGaP layer over the n-GaN pillar and InGaN/GaN MQW or the n-InGaP pillar and AlInGaP/InGaP MQW down to the first oxide layer; forming a TCO layer over the first oxide layer and the p-GaN or p-InGaP layer; forming a second oxide layer over the TCO layer; and forming a metal pad on the TCO layer above each n-GaN or n-InGaP pillar.

    NANOWIRE FORMATION METHODS
    5.
    发明申请
    NANOWIRE FORMATION METHODS 审中-公开

    公开(公告)号：US20190081206A1

    公开(公告)日：2019-03-14

    申请号：US15704982

    申请日：2017-09-14

    Applicant: GLOBALFOUNDRIES Inc.

    Inventor： Srinivasa BANNA ,  Deepak NAYAK

    IPC: H01L33/06 ,  H01L33/00 ,  H01L33/32 ,  H01L33/30 ,  H01L27/15 ,  H01L33/24 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62

    Abstract: Methods of forming an integrated InGaN/GaN or AlInGaP/InGaP LED on Si CMOS for RGB colors and the resulting devices are provided. Embodiments include forming trenches having a v-shaped bottom through an oxide layer and a portion of a substrate; forming AlN or GaAs in the v-shaped bottom; forming a n-GaN or n-InGaP pillar on the AlN or GaAs through and above the first oxide layer; forming an InGaN/GaN MQW or AlInGaP/InGaP MQW over the n-GaN or n-InGaP pillar; forming a p-GaN or p-InGaP layer over the n-GaN pillar and InGaN/GaN MQW or the n-InGaP pillar and AlInGaP/InGaP MQW down to the first oxide layer; forming a TCO layer over the first oxide layer and the p-GaN or p-InGaP layer; forming a second oxide layer over the TCO layer; and forming a metal pad on the TCO layer above each n-GaN or n-InGaP pillar.

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