公开(公告)号：US20140162447A1

公开(公告)日：2014-06-12

申请号：US13709250

申请日：2012-12-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES, INC. ,  RENESAS ELECTRONICS CORPORATION

Inventor： Lisa F. Edge ,  Martin M. Frank ,  Balasubramanian S. Haran ,  Atsuro Inada ,  Sivananda K. Kanakasabapathy ,  Andreas Knorr ,  Vijay Narayanan ,  Vamsi K. Paruchuri ,  Soon-cheon Seo

IPC: H01L21/28

CPC classification number: H01L29/66795 ,  H01L29/41791

Abstract: A method for fabricating a field effect transistor device includes patterning a fin on substrate, patterning a gate stack over a portion of the fin and a portion of an insulator layer arranged on the substrate, forming a protective barrier over the gate stack, a portion of the fin and a portion of the insulator layer, the protective barrier enveloping the gate stack, depositing a second insulator layer over portions of the fin and the protective barrier, performing a first etching process to selectively remove portions of the second insulator layer to define cavities that expose portions of source and drain regions of the fin without appreciably removing the protective barrier, and depositing a conductive material in the cavities.

Abstract translation: 一种用于制造场效应晶体管器件的方法，包括对衬底上的翅片进行图案化，在栅极堆叠的一部分上构图栅极堆叠，以及布置在衬底上的绝缘体层的一部分，在栅极叠层上形成保护屏障， 所述翅片和所述绝缘体层的一部分，所述保护屏障包围所述栅极堆叠，在所述鳍片和所述保护屏障的部分上沉积第二绝缘体层，执行第一蚀刻工艺以选择性地去除所述第二绝缘体层的部分以限定空腔 其暴露鳍片的源极和漏极区域的部分，而不明显地去除保护屏障，以及在空腔中沉积导电材料。

公开(公告)号：US09564505B2

公开(公告)日：2017-02-07

申请号：US14254939

申请日：2014-04-17

Applicant: GLOBALFOUNDRIES INC.

Inventor： Michael P. Chudzik ,  Martin M. Frank ,  Herbert L. Ho ,  Mark J. Hurley ,  Rashmi Jha ,  Naim Moumen ,  Vijay Narayanan ,  Dae-Gyu Park ,  Vamsi K. Paruchuri

IPC: H01L21/70 ,  H01L29/49 ,  H01L21/28 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/51

CPC classification number: H01L29/49 ,  H01L21/28079 ,  H01L21/28088 ,  H01L21/823842 ,  H01L27/092 ,  H01L29/4958 ,  H01L29/517

Abstract: Ion implantation to change an effective work function for dual work function metal gate integration is presented. One method may include forming a high dielectric constant (high-k) layer over a first-type field effect transistor (FET) region and a second-type FET region; forming a metal layer having a first effective work function compatible for a first-type FET over the first-type FET region and the second-type FET region; and changing the first effective work function to a second, different effective work function over the second-type FET region by implanting a species into the metal layer over the second-type FET region.

Abstract translation: 提出了离子注入来改变双功能金属栅极整合的有效功函数。 一种方法可以包括在第一类型场效应晶体管（FET）区域和第二类型FET区域上形成高介电常数（高k）层; 在第一型FET区域和第二类型FET区域上形成具有与第一型FET兼容的第一有效功函数的金属层; 以及通过在第二类型FET区域上将金属注入到金属层中，将第一有效功函数改变为第二类不同的有效功函数。

公开(公告)号：US09412629B2

公开(公告)日：2016-08-09

申请号：US13658856

申请日：2012-10-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： Son V. Nguyen ,  Vamsi K. Paruchuri ,  Deepika Priyadarshini ,  Tuan A. Vo

IPC: H01L21/00 ,  H01L21/67 ,  H01L23/00 ,  H01L25/00 ,  H01L27/06

CPC classification number: H01L21/67092 ,  H01L24/74 ,  H01L24/80 ,  H01L25/50 ,  H01L27/0688 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75303 ,  H01L2224/80209 ,  H01L2224/94 ,  H01L2224/80

Abstract: An apparatus and method bond a first wafer to a second wafer. The apparatus includes a first pressure application device configured to apply pressure at a central region of the first wafer in a direction toward the second wafer to initiate a bonding process between the first wafer and the second wafer. The apparatus also includes one or more second pressure application devices configured to apply pressure between the central region and an outer edge of the first wafer to complete the bonding process. The one or more second pressure application devices apply pressure on the first wafer after the first pressure application device has initiated the bonding process and while the first pressure application device continues to apply pressure at the central region. A controller controls the first pressure application device and the one or more second pressure application devices.

Abstract translation: 一种装置和方法将第一晶片连接到第二晶片。 该装置包括：第一压力施加装置，被配置为在朝向第二晶片的方向上在第一晶片的中心区域施加压力，以启动第一晶片和第二晶片之间的接合过程。 该设备还包括一个或多个第二压力施加装置，其被配置为在第一晶片的中心区域和外边缘之间施加压力以完成粘合过程。 一个或多个第二压力施加装置在第一压力施加装置已经开始粘合过程之后并且当第一压力施加装置继续在中心区域施加压力时，在第一晶片上施加压力。 控制器控制第一压力施加装置和一个或多个第二压力施加装置。