摘要:
A method for fabrication and a structure of a self-aligned (crosspoint) memory device comprises lines (wires) in a first direction and in a second direction. The wires in the first direction are formed using a hard mask material that is resistant to the pre-selected etch processes used for creation of the lines in both the first and the second direction. Consequently, the hard mask material for the lines in the first direction form part of the memory stack.
摘要:
A method and structure for a memory cell comprising a phase change material; a heating element in thermal contact with the phase change material, wherein the heating element is adapted to induce a phase change in the phase change material; and electrical lines configured to pass current through the heating element, wherein the phase change material and the heating element are arranged in a configuration other than being electrically connected in series. The memory cell further comprises a sensing element in thermal contact with the phase change material, wherein the sensing element is adapted to detect a change in at least one physical property of the phase change material, wherein the sensing element is adapted to detect a change in a thermal conductivity of the phase change material.
摘要:
A method for fabrication and a structure of a self-aligned (crosspoint) memory device comprises lines (wires) in a first direction and in a second direction. The wires in the first direction are formed using a hard mask material that is resistant to the pre-selected etch processes used for creation of the lines in both the first and the second direction. Consequently, the hard mask material for the lines in the first direction form part of the memory stack.
摘要:
An apparatus for measuring material outgassed from an object. The apparatus has a chamber containing the object, a condensed material detector (e.g. a quartz microbalance), a heater for heating the object and chamber, and a cooler for cooling the detector. The chamber is sealed from the ambient atmosphere and the detector is located within the chamber. The chamber may contain a vacuum or a gas at ambient atmospheric pressure. Material outgassed from the object is distributed throughout the chamber by vapor transport and is incident upon the detector, where it condenses. Since the detector is the only cooled surface in contact with the vapors, it collects nearly all the outgassed material. This provides high sensitivity to outgassing. The chamber may also include a mechanical stirring device for aiding vapor transport, or may be oriented so that a thermal convection current is established. Preferably, the chamber includes a snout for thermally isolating the detector and chamber so that a steep temperature gradient exists close to the detector surface. Alternatively, the detector has a coating with a high affinity for outgassed materials of interest. The chamber, detector, and object are at nearly the same temperature and the outgassed materials preferentially condense on the detector due to the high affinity of the coating for the outgassed materials.
摘要:
A method of forming a block copolymer pattern comprises providing a substrate comprising a topographic pre-pattern comprising a ridge surface separated by a height, h, greater than 0 nanometers from a trench surface; disposing a block copolymer comprising two or more block components on the topographic pre-pattern to form a layer having a thickness of more than 0 nanometers over the ridge surface and the trench surface; and annealing the layer to form a block copolymer pattern having a periodicity of the topographic pre-pattern, the block copolymer pattern comprising microdomains of self-assembled block copolymer disposed on the ridge surface and the trench surface, wherein the microdomains disposed on the ridge surface have a different orientation compared to the microdomains disposed on the trench surface.
摘要:
Disclosed herein is a method of controlling the orientation of microphase-separated domains in a block copolymer film, comprising forming an orientation control layer comprising an epoxy-containing cycloaliphatic acrylic polymer on a surface of a substrate, irradiating and/or heating the substrate to crosslink the orientation control layer, and forming a block copolymer assembly layer comprising block copolymers which form microphase-separated domains, on a surface of the orientation control layer opposite the substrate. The orientation control layer can be selectively cross-linked to expose regions of the substrate, or the orientation control layer can be patterned without removing the layer, to provide selective patterning on the orientation control layer. In further embodiments, bilayer and trilayer imaging schemes are disclosed.
摘要:
Disclosed herein is a method of forming polymer structures comprising applying a solution of a diblock copolymer assembly comprising at least one diblock copolymer that forms lamellae, to a neutral surface of a substrate having a chemical pattern thereon, the chemical pattern comprising alternating pinning and neutral regions that are chemically distinct and which have a chemical pattern spatial frequency given by the number of paired sets of pinning and neutral regions along a given direction on the substrate; and forming domains comprising blocks of the diblock copolymer. The domains form by lateral segregation of the blocks. At least one domain has an affinity for the pinning regions and forms on the pinning region, the domains so formed on the pinning region are aligned with the underlying chemical pattern, and domains that do not form on the pinning region form adjacent to and are aligned with the domains formed on the pinning regions. In this way, a structure comprising repeating sets of domains is formed on the chemical pattern with a spatial frequency given by the number of repeating sets of domains in the given direction, that is at least twice that of the chemical pattern spatial frequency. Methods of forming the chemical patterns, and pattern transfer methods using patterned domains, are also disclosed.
摘要:
An avalanche-type detector circuit includes an avalanche-type photon detector device, a coupling capacitor, a bias network, a first transmission line and a second transmission line. The coupling capacitor has a first terminal that is coupled to a first terminal of the avalanche-type photon detector device. A first terminal of the bias network is coupled to the first terminal of the avalanche-type photon detector device, while a second terminal of the bias network is coupled to a bias voltage so that the avalanche-type photon detector device is reverse biased. A first end of the first transmission line is coupled to a second terminal of the coupling capacitor, and second end of the first transmission line is terminated by an open-circuit termination. A first end of the second transmission line is coupled to a second terminal of the avalanche-type photon detector device. The second end of the second transmission line is terminated by a short-circuit termination. A bias pulse voltage Vpulse is coupled to the second terminal of the coupling capacitor such that the bias pulse voltage reverse biases the avalanche-type photon detector device to be greater than a reverse breakdown voltage Vbr of the avalanche-type photon detector device during a duration of the bias pulse voltage Vpulse. A round-trip propagation delay along the first transmission line is substantially equal to a round-trip propagation delay along the second transmission line.
摘要:
Methods and computer program products for designing topographic patterns for directing the formation of self-assembled domains at specified locations on substrates. The methods include generating mathematical models that operate on mathematical descriptions of the number and locations of cylindrical self-assembled domains in a mathematical description of a guiding pattern.
摘要:
Methods are disclosed for forming topographical features. In one method, a pre-patterned structure is provided which comprises i) a support member having a surface and ii) an element for topographically guiding segregation of a polymer mixture including a first polymer and a second polymer, the element comprising a feature having a sidewall adjoined to the surface. The polymer mixture is disposed on the pre-patterned structure, wherein the disposed polymer mixture has contact with the sidewall and the surface. The first polymer and the second polymer are segregated in a plane parallel to the surface, thereby forming a segregated structure comprising a first polymer domain and a second polymer domain. The first polymer domain and/or the second polymer domain are lithographically patterned, thereby forming topographical features comprising at least one of i) a first feature comprising a lithographically patterned first polymer domain and ii) a second feature comprising a lithographically patterned second polymer domain.