摘要:
The present invention relates to a diamond electronic device comprising a functional interface between two solid materials, wherein the interface is formed by a planar first surface of a first layer of single crystal diamond and a second layer formed on the first surface of the first diamond layer, the second layer being solid, non-metallic and selected from diamond, a polar material and a dielectric material, and wherein the planar first surface of the first layer of single crystal diamond has an Rq of less than 10 nm and has at least one of the following characteristics: (a) the first surface is an etched surface; (b) a density of dislocations in the first diamond layer breaking the first surface is less than 400 cm−2 measured over an area greater than 0.014 cm2; (c) a density of dislocations in the second layer breaking a notional or real surface lying within the second layer parallel to the interface and within 50 μm of the interface is less than 400 cm−2 measured over an area greater than 0.014 cm2; and (d) the first surface has an Rq less than 1 nm.
摘要:
Electronic field effect devices, and methods of manufacture of these electronic field effect devices are disclosed. In particular, there is disclosed an electronic field effect device which has improved electrical properties due to the formation of a highly mobile two-dimensional charge-carrier gas in a simple structure formed from diamond in combination with polar materials.
摘要:
The present invention relates to a diamond electronic device comprising a functional surface formed by a planar surface of a single crystal diamond, the planar surface of the single crystal diamond having an Rq of less than 10 nm and at least one of the following characteristics: (a) the surface has not been mechanically processed since formation by synthesis; (b) the surface is an etched surface; (c) a density of dislocations in the diamond breaking the surface is less than 400 cm″2 measured over an area greater than 0.014 cm2; (d) the surface has an Rq less than 1 nm; (e) the surface has regions with a layer of charge carriers immediately below it, such that the regions of the surface are normally termed conductive, such as a hydrogen terminated {100} diamond surface region; (f) the surface has regions with no layer of charge carriers immediately below it, such that these regions of the surface are normally termed insulating, such as an oxygen terminated {100} diamond surface; and (g) the surface has one or more regions of metallization providing electrical contact to the diamond surface beneath these regions.
摘要:
Electronic field effect devices, and methods of manufacture of these electronic field effect devices are disclosed. In particular, there is disclosed an electronic field effect device which has improved electrical properties due to the formation of a highly mobile two-dimensional charge-carrier gas in a simple structure formed from diamond in combination with polar materials.
摘要:
Electronic field effect devices, and methods of manufacture of these electronic field effect devices are disclosed. In particular, there is disclosed an electronic field effect device which has improved electrical properties due to the formation of a highly mobile two-dimensional charge-carrier gas in a simple structure formed from diamond in combination with polar materials.
摘要:
Electronic field effect devices, and methods of manufacture of these electronic field effect devices are disclosed. In particular, there is disclosed an electronic field effect device which has improved electrical properties due to the formation of a highly mobile two-dimensional charge-carrier gas in a simple structure formed from diamond in combination with polar materials.
摘要:
A method of producing CVD diamond having a high color, which is suitable for optical applications, for example. The method includes adding a gaseous source comprising a second impurity atom type to counter the detrimental effect on colour caused by the presence in the CVD synthesis atmosphere of a first impurity atom type. The described method applies to the production of both single crystal diamond and polycrystalline diamond.
摘要:
The present invention relates to a method of producing a diamond surface including the steps of providing an original diamond surface, subjecting the original diamond surface to plasma etching to remove at least 2 nm of material from the original surface and produce a plasma etched surface, the roughness Rq of the plasma etched surface at the location of the etched surface where the greatest depth of material has been removed satisfying at least one of the following conditions: Rq of the plasma etched surface is less than 1.5 times the roughness of Rq of the original surface, or Rq of the plasma etched surface is less than 1 nm.
摘要:
The present invention relates to a method of producing a diamond surface including the steps of providing an original diamond surface, subjecting the original diamond surface to plasma etching to remove at least 2 nm of material from the original surface and produce a plasma etched surface, the roughness Rq of the plasma etched surface at the location of the etched surface where the greatest depth of material has been removed satisfying at least one of the following conditions: Rq of the plasma etched surface is less than 1.5 times the roughness of Rq of the original surface, or Rq of the plasma etched surface is less than 1 nm.
摘要:
A method of producing a CVD single crystal diamond layer on a substrate includes adding into a DVD synthesis atmosphere a gaseous source comprising silicon. The method can be used to mark the diamond material, for instance to provide means by which its synthetic nature can more easily be determined. It can also be exploited to generate single crystal diamond material of high color.