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    DIAMOND ELECTRONIC DEVICES AND METHODS FOR THEIR MANUFACTURE
    1.
    发明申请
    DIAMOND ELECTRONIC DEVICES AND METHODS FOR THEIR MANUFACTURE 审中-公开
    钻石电子设备及其制造方法

    公开(公告)号：US20100038653A1

    公开(公告)日：2010-02-18

    申请号：US12523968

    申请日：2008-01-22

    申请人： Geoffrey Alan Scarsbrook ,  Ian Friel ,  Richard Stuart Balmer

    发明人： Geoffrey Alan Scarsbrook ,  Ian Friel ,  Richard Stuart Balmer

    IPC分类号： H01L29/12 ,  H01L21/04

    CPC分类号： C01B32/28 ,  C23C16/27 ,  C23C16/274 ,  C23C16/278 ,  C30B25/105 ,  C30B25/20 ,  C30B29/04 ,  G01N21/87 ,  G01N21/95 ,  G01N27/308 ,  G01N2201/0636 ,  H01J37/321 ,  H01J2237/08 ,  H01J2237/3341 ,  H01L21/02104 ,  H01L21/02376 ,  H01L21/02527 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/041 ,  H01L29/045 ,  H01L29/1602 ,  H01L29/167 ,  H01L29/36 ,  Y10T428/24355

    摘要： The present invention relates to a diamond electronic device comprising a functional interface between two solid materials, wherein the interface is formed by a planar first surface of a first layer of single crystal diamond and a second layer formed on the first surface of the first diamond layer, the second layer being solid, non-metallic and selected from diamond, a polar material and a dielectric material, and wherein the planar first surface of the first layer of single crystal diamond has an Rq of less than 10 nm and has at least one of the following characteristics: (a) the first surface is an etched surface; (b) a density of dislocations in the first diamond layer breaking the first surface is less than 400 cm−2 measured over an area greater than 0.014 cm2; (c) a density of dislocations in the second layer breaking a notional or real surface lying within the second layer parallel to the interface and within 50 μm of the interface is less than 400 cm−2 measured over an area greater than 0.014 cm2; and (d) the first surface has an Rq less than 1 nm.

    摘要翻译： 金刚石电子器件技术领域本发明涉及一种金刚石电子器件，其包括两个固体材料之间的功能界面，其中界面由第一层单晶金刚石的平面第一表面和形成在第一金刚石层的第一表面上的第二层形成 所述第二层为固体，非金属且选自金刚石，极性材料和介电材料，并且其中所述第一层单晶金刚石的平面第一表面的Rq小于10nm，并且具有至少一个 具有以下特征：（a）第一表面是蚀刻表面; （b）破坏第一表面的第一金刚石层中的位错密度小于在大于0.014cm 2的区域上测量的400cm -2; （c）第二层中位于第二层内的位错密度在平坦于界面的第二层内并且在界面的50μm以内破坏在大于0.014cm 2的区域上测得的小于400cm -2; 和（d）第一表面具有小于1nm的Rq。

    DIAMOND ELECTRONIC DEVICES INCLUDING A SURFACE AND METHODS FOR THEIR MANUFACTURE
    3.
    发明申请
    DIAMOND ELECTRONIC DEVICES INCLUDING A SURFACE AND METHODS FOR THEIR MANUFACTURE 审中-公开
    包括表面的金刚石电子器件及其制造方法

    公开(公告)号：US20100078652A1

    公开(公告)日：2010-04-01

    申请号：US12523963

    申请日：2008-01-22

    申请人： Geoffrey Alan Scarsbrook ,  Ian Friel ,  Richard Stuart Balmer

    发明人： Geoffrey Alan Scarsbrook ,  Ian Friel ,  Richard Stuart Balmer

    IPC分类号： H01L29/16

    CPC分类号： C01B32/28 ,  C23C16/27 ,  C23C16/274 ,  C23C16/278 ,  C30B25/105 ,  C30B25/20 ,  C30B29/04 ,  G01N21/87 ,  G01N21/95 ,  G01N27/308 ,  G01N2201/0636 ,  H01J37/321 ,  H01J2237/08 ,  H01J2237/3341 ,  H01L21/02104 ,  H01L21/02376 ,  H01L21/02527 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/041 ,  H01L29/045 ,  H01L29/1602 ,  H01L29/167 ,  H01L29/36 ,  Y10T428/24355

    摘要： The present invention relates to a diamond electronic device comprising a functional surface formed by a planar surface of a single crystal diamond, the planar surface of the single crystal diamond having an Rq of less than 10 nm and at least one of the following characteristics: (a) the surface has not been mechanically processed since formation by synthesis; (b) the surface is an etched surface; (c) a density of dislocations in the diamond breaking the surface is less than 400 cm″2 measured over an area greater than 0.014 cm2; (d) the surface has an Rq less than 1 nm; (e) the surface has regions with a layer of charge carriers immediately below it, such that the regions of the surface are normally termed conductive, such as a hydrogen terminated {100} diamond surface region; (f) the surface has regions with no layer of charge carriers immediately below it, such that these regions of the surface are normally termed insulating, such as an oxygen terminated {100} diamond surface; and (g) the surface has one or more regions of metallization providing electrical contact to the diamond surface beneath these regions.

    摘要翻译： 金刚石电子器件技术领域本发明涉及一种金刚石电子器件，其包括由单晶金刚石的平面形成的功能表面，所述单晶金刚石的平面表面具有小于10nm的Rq和以下特征中的至少一个：（ a）通过合成形成，表面未被机械加工; （b）表面是蚀刻表面; （c）破碎表面的金刚石中的位错密度小于在大于0.014cm 2的区域上测量的400cm -2; （d）表面的Rq小于1nm; （e）表面具有紧邻其下方的电荷载流子层的区域，使得表面的区域通常称为导电的，例如氢封端的{100}金刚石表面区域; （f）表面具有在其正下方没有电荷载体层的区域，使得表面的这些区域通常称为绝缘体，例如氧终止的{100}金刚石表面; 和（g）表面具有一个或多个金属化区域，在这些区域下面的金刚石表面提供电接触。