公开(公告)号：US07023891B2

公开(公告)日：2006-04-04

申请号：US10427956

申请日：2003-05-02

申请人： Hideki Haneda ,  Go Sakaino ,  Yoshihiro Hisa

发明人： Hideki Haneda ,  Go Sakaino ,  Yoshihiro Hisa

IPC分类号： H01S5/20

CPC分类号： H01S5/227 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/2277

摘要： A semiconductor optical device which has a ridge structure includes a waveguide area between paired mesa trenches; first and second mount areas disposed outside the mesa trenches; a first spacer layer disposed in a first mount area and a second spacer layer disposed in a second mount area; a first metal layer electrically connected to an upper cladding layer in the waveguide area and extending from the waveguide area over the first mount area; and a second metal layer disposed over the second mount area. Thicknesses from a back surface of the semiconductor optical device to the first metal layer in the first mount area and to the second metal layer in the second mount area are both larger than thickness from the back surface to the first metal layer in the waveguide area.

摘要翻译： 具有脊结构的半导体光学器件包括在成对台面沟槽之间的波导区域; 设置在台面沟槽外的第一和第二安装区域; 设置在第一安装区域中的第一间隔层和设置在第二安装区域中的第二间隔层; 第一金属层，电连接到波导区域中的上包层，并从第一安装区域上的波导区域延伸; 以及设置在所述第二安装区域上的第二金属层。 从半导体光学器件的背面到第一安装区域中的第一金属层和第二安装区域中的第二金属层的厚度都大于波导区域中从背面到第一金属层的厚度。

公开(公告)号：US20100215071A1

公开(公告)日：2010-08-26

申请号：US12468958

申请日：2009-05-20

申请人： Go Sakaino

发明人： Go Sakaino

IPC分类号： H01S5/187

CPC分类号： H01S5/12 ,  B82Y20/00 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/1039 ,  H01S5/227 ,  H01S5/3434

摘要： A semiconductor laser including a p-type semiconductor layer, an active layer, and an n-type semiconductor layer sequentially laminated on a p-type semiconductor substrate; and a diffraction grating in the n-type semiconductor layer along the direction of an optical waveguide. The reflectance of light on two facing laser end surfaces is asymmetric; the length L of the active layer in the optical waveguide direction is 130 μm or shorter; the diffraction grating material has a photoluminescence wavelength of 1,200 nm or longer; and κL, which is the product of the length L and the coupling coefficient κ of the diffraction grating, is at least 1.5 and smaller than 3.0.

摘要翻译： 一种半导体激光器，包括顺序层压在p型半导体衬底上的p型半导体层，有源层和n型半导体层; 以及沿着光波导的方向的n型半导体层中的衍射光栅。 在两个面对的激光端面上的光的反射率是不对称的; 有源层在光波导方向上的长度L为130μm以下; 衍射光栅材料的光致发光波长为1200nm以上; 和＆kgr; L，其是长度L和耦合系数kgr的乘积; 的衍射光栅，至少为1.5，小于3.0。

公开(公告)号：US5909523A

公开(公告)日：1999-06-01

申请号：US816934

申请日：1997-03-14

申请人： Go Sakaino ,  Katsuhiko Goto ,  Toshitaka Aoyagi

发明人： Go Sakaino ,  Katsuhiko Goto ,  Toshitaka Aoyagi

IPC分类号： G02B6/42 ,  G02B6/30

CPC分类号： G02B6/4207 ,  G02B6/42 ,  G02B6/4204 ,  G02B6/4224 ,  H01L2224/48091

摘要： An optical module includes a substrate having an upper surface and a groove on the upper surface; an optical fiber having a core and an end facet, disposed in the groove of the substrate; an optical semiconductor device having an upper surface and a light interactive area on the upper surface optically coupled to the optical fiber; and a block having a side surface on which the optical semiconductor device is fixed and a lower surface perpendicular to the side surface. The optical semiconductor device is fixed onto the side surface of the block so that the distance from the light interactive area to the lower surface of the block is equal to the distance from the core of the optical fiber to the upper surface of the substrate; and the block is disposed on the substrate, with the lower surface contacting the upper surface of the substrate, so that the light interactive area is opposed to the end facet of the optical fiber. The core of the optical fiber and the light interactive area are accurately aligned with the surface of the substrate as a reference regardless of the thickness of the substrate, resulting in a high coupling efficiency between the optical fiber and the optical semiconductor device.

摘要翻译： 光学模块包括在上表面上具有上表面和凹槽的基板; 具有芯和端面的光纤，设置在基板的槽中; 光学半导体器件，具有光学耦合到光纤的上表面上的上表面和光交互区域; 以及具有固定光半导体器件的侧表面和垂直于侧表面的下表面的块。 光学半导体器件被固定在块的侧表面上，使得从光交互区域到块的下表面的距离等于从光纤的芯到衬底的上表面的距离; 并且所述块设置在所述基板上，所述下表面接触所述基板的上表面，使得所述光交互区域与所述光纤的端面相对。 无论基板的厚度如何，光纤和光交互区域的核心与基板的表面精确对准，作为基准，导致光纤和光学半导体器件之间的高耦合效率。

公开(公告)号：US20130070798A1

公开(公告)日：2013-03-21

申请号：US13587036

申请日：2012-08-16

申请人： Go Sakaino ,  Harunaka Yamaguchi ,  Takashi Nagira

发明人： Go Sakaino ,  Harunaka Yamaguchi ,  Takashi Nagira

IPC分类号： H01S5/24 ,  H01L33/02

CPC分类号： H01S5/2275 ,  H01S5/12 ,  H01S5/2009 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2224

摘要： A semiconductor laser includes a semiconductor laser portion including an active layer portion having a p-type cladding layer, an active layer, and an n-type cladding layer on a p-type InP semiconductor substrate; and current confining structures that fill spaces on both sides of the semiconductor laser portion. Each of the current confining structures includes a first p-type InP layer, a Ru-doped InP layer, and a second p-type InP layer. The Ru-doped InP layer is in contact only with the first and second p-type InP layers. To obtain the structure, timing of introduction of a halogen-containing gas is adjusted.

摘要翻译： 半导体激光器包括在p型InP半导体衬底上包括具有p型覆层，有源层和n型覆层的有源层部分的半导体激光器部分; 以及填充半导体激光器部分两侧的空间的电流限制结构。 每个电流限制结构包括第一p型InP层，Ru掺杂InP层和第二p型InP层。 Ru掺杂的InP层仅与第一和第二p型InP层接触。 为了获得结构，调节含卤素气体的引入时间。

公开(公告)号：US07835413B2

公开(公告)日：2010-11-16

申请号：US12198152

申请日：2008-08-26

申请人： Tohru Takiguchi ,  Yuichiro Okunuki ,  Go Sakaino

发明人： Tohru Takiguchi ,  Yuichiro Okunuki ,  Go Sakaino

IPC分类号： H01S5/00

CPC分类号： H01S5/227 ,  H01S5/2222 ,  H01S5/2226 ,  H01S5/2275

摘要： A semiconductor laser comprises: a ridge structure including a p-type cladding layer, an active layer, and an n-type cladding layer stacked on one another; and a burying layer burying sides of the ridge structure. The burying layer includes a p-type semiconductor layer and an n-type semiconductor layer that form a pn junction; and one of the p-type semiconductor layer and the n-type semiconductor layer has a carrier concentration of 5×1017 cm−3 or less near the pn junction.

摘要翻译： 半导体激光器包括：包括彼此堆叠的p型覆层，有源层和n型覆层的脊结构; 以及埋藏在山脊结构侧面的埋藏层。 掩埋层包括形成pn结的p型半导体层和n型半导体层; p型半导体层和n型半导体层中的一个在pn结附近具有5×1017cm-3以下的载流子浓度。

公开(公告)号：US5644586A

公开(公告)日：1997-07-01

申请号：US526561

申请日：1995-09-12

申请人： Minoru Kawano ,  Go Sakaino

发明人： Minoru Kawano ,  Go Sakaino

IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/40 ,  H01S3/18

CPC分类号： H01S5/4043 ,  H01S5/02268 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01S5/0207 ,  H01S5/02272 ,  H01S5/0425 ,  H01S5/4018

摘要： In a semiconductor laser device including a stack of semiconductor laser chips, each semiconductor laser chip includes opposite upper and lower surfaces, an upper electrode disposed on a portion of the upper surface, and a lower electrode disposed on a portion of the lower surface. Two adjacent semiconductor laser chips in the stack are connected such that the lower electrode of an upper laser chip is bonded to the upper electrode of a lower laser chip with solder. Since the upper electrode (lower electrode) is disposed on a portion of the upper surface (lower surface) of each laser chip, i.e., it is not disposed over the entire upper surface (lower surface) of the laser chip, the solder hardly flows over the side surface of the laser chip, so that unwanted short-circuiting between the upper electrode and the lower electrode of the laser chip is avoided. In addition, when solder is molten between two electrodes, the molten solder spreads over the surfaces of the electrodes, and the surface tension of the molten solder draws the electrodes to each other so that the electrodes are automatically aligned with each other. Therefore, in this stacked laser device, since the surface tension of the molten solder functions between the upper electrode and the lower electrode of the adjacent laser chips, automatic alignment is performed between these laser chips.

摘要翻译： 在包括半导体激光器芯片堆叠的半导体激光器件中，每个半导体激光器芯片包括相对的上表面和下表面，设置在上表面的一部分上的上电极和设置在下表面的一部分上的下电极。 将堆叠中的两个相邻的半导体激光器芯片连接，使得上部激光器芯片的下部电极与焊料接合到下部激光器芯片的上部电极。 由于上电极（下电极）配置在激光芯片的上表面（下表面）的一部分上，即不设置在激光芯片的整个上表面（下表面）上，所以焊料几乎不流动 在激光芯片的侧表面上，从而避免了激光芯片的上电极和下电极之间的不希望的短路。 此外，当焊料在两个电极之间熔融时，熔融的焊料扩散在电极的表面上，并且熔融焊料的表面张力将电极彼此吸引，使得电极彼此自动对准。 因此，在该堆叠式激光装置中，由于熔融焊料的表面张力在相邻的激光芯片的上部电极和下部电极之间起作用，因此在这些激光芯片之间进行自动对准。

公开(公告)号：US08472490B2

公开(公告)日：2013-06-25

申请号：US12779090

申请日：2010-05-13

申请人： Go Sakaino

发明人： Go Sakaino

IPC分类号： H01S5/00

CPC分类号： H01S5/2275 ,  H01S5/2206 ,  H01S5/2222

摘要： A semiconductor optical element and an integrated semiconductor optical element suppressing leakage current flow through a burying layer. A mesa-stripe-shaped laminate structure includes a p-type cladding layer, an active layer, and an n-type cladding layer. A burying layer on a side of the laminated structure includes, a first p-type semiconductor layer, a first n-type semiconductor layer, an Fe-doped semiconductor layer, a second n-type semiconductor layer, a low carrier concentration semiconductor layer, and a second p-type semiconductor layer. The Fe-doped semiconductor layer is not grown on a (111)B surface of the first p-type semiconductor layer and of the first n-type semiconductor layer. The second n-type semiconductor layer is not grown on a (111)B surface of the first p-type semiconductor layer, of the first n-type semiconductor layer, and of the Fe-doped semiconductor layer.

摘要翻译： 半导体光学元件和抑制泄漏电流流过掩埋层的集成半导体光学元件。 台状条状层叠结构包括p型包覆层，有源层和n型覆层。 层叠结构一侧的掩埋层包括第一p型半导体层，第一n型半导体层，掺杂Fe的半导体层，第二n型半导体层，低载流子浓度半导体层， 和第二p型半导体层。 掺杂Fe的半导体层不在第一p型半导体层和第一n型半导体层的（111）B表面上生长。 第二n型半导体层不在第一p型半导体层，第一n型半导体层和掺杂Fe的半导体层的（111）B表面上生长。

公开(公告)号：US07618836B2

公开(公告)日：2009-11-17

申请号：US12113299

申请日：2008-05-01

申请人： Go Sakaino

发明人： Go Sakaino

IPC分类号： H01L21/00

CPC分类号： H01S5/227 ,  H01S5/028 ,  H01S5/12 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/2275

摘要： A method for manufacturing a semiconductor optical device comprises: forming a groove on a first semiconductor layer; forming a second semiconductor layer containing aluminum in the groove; forming a third semiconductor layer on the first semiconductor layer and the second semiconductor layer; forming an insulating layer on the third semiconductor layer covering the region opposite the second semiconductor layer; forming a stripe-shaped structure by etching the first semiconductor layer and the third semiconductor layer without exposing the second semiconductor layer, using the insulating layer as a mask; and burying the stripe-shaped structure with burying layers.

摘要翻译： 一种制造半导体光学器件的方法包括：在第一半导体层上形成沟槽; 在槽中形成含有铝的第二半导体层; 在所述第一半导体层和所述第二半导体层上形成第三半导体层; 在覆盖与第二半导体层相对的区域的第三半导体层上形成绝缘层; 通过使用绝缘层作为掩模，通过蚀刻第一半导体层和第三半导体层而不暴露第二半导体层来形成条形结构; 并用掩埋层掩埋条状结构。

公开(公告)号：US20090197363A1

公开(公告)日：2009-08-06

申请号：US12113299

申请日：2008-05-01

申请人： Go Sakaino

发明人： Go Sakaino

IPC分类号： H01L33/00

CPC分类号： H01S5/227 ,  H01S5/028 ,  H01S5/12 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/2275

摘要： A method for manufacturing a semiconductor optical device comprises forming a groove on a first semiconductor layer; forming a second semiconductor layer containing aluminum in the groove; forming a third semiconductor layer on the first semiconductor layer and the second semiconductor layer; forming an insulating layer on the third semiconductor layer covering the region opposite the second semiconductor layer; forming a stripe-shaped structure by etching the first semiconductor layer and the third semiconductor layer without exposing the second semiconductor layers using the insulating layer as a mask; and burying the stripe-shaped structure with burying layers.

摘要翻译： 一种制造半导体光学器件的方法包括在第一半导体层上形成沟槽; 在槽中形成含有铝的第二半导体层; 在所述第一半导体层和所述第二半导体层上形成第三半导体层; 在覆盖与第二半导体层相对的区域的第三半导体层上形成绝缘层; 通过蚀刻所述第一半导体层和所述第三半导体层而不使用所述绝缘层作为掩模来暴露所述第二半导体层来形成条形结构; 并用掩埋层掩埋条状结构。

公开(公告)号：US06788725B2

公开(公告)日：2004-09-07

申请号：US09987259

申请日：2001-11-14

申请人： Toshitaka Aoyagi ,  Go Sakaino

发明人： Toshitaka Aoyagi ,  Go Sakaino

IPC分类号： H01S308

CPC分类号： B82Y20/00 ,  H01S5/06226 ,  H01S5/12 ,  H01S5/124 ,  H01S5/3434

摘要： An n-InP second upper cladding layer is laid on a p-InP lower cladding layer while an active layer having upper and lower boundary surfaces that are uniformly flat in an optical waveguide direction is interposed therebetween. A diffraction layer having a phase-shifted structure in the optical waveguide direction is interposed between the lower cladding layer and the active layer or between the second upper cladding layer and the active layer. The length L of the diffraction grating layer in the direction of the optical waveguide is L≦260 &mgr;m; a mean coupling factor &kgr; of a diffraction grating layer is &kgr;≧150 cm−1; and &kgr;L satisfies 5.6>&kgr;L>3.0.

摘要翻译： 将n-InP第二上包层放置在p-InP下包层上，同时插入具有在光波导方向上均匀平坦的上边界面和下边界面的有源层。 具有在光波导方向上具有相移结构的衍射层插入在下包层和有源层之间或第二上包层和有源层之间。 衍射光栅层沿光波导方向的长度L为L <=260μm; 衍射光栅层的平均耦合系数kappa = 150cm -1; 而kappaL满足5.6> kappa> 3.0。