摘要:
A surface charge measuring distribution method includes the steps of irradiating a sample with a charged particle beam and charging a sample surface in a spot-like manner, irradiating the charged sample with the charged particle beam to measure a potential at a potential saddle point formed above the sample, selecting one of preset multiple structure models and a tentative space charge distribution associated with the selected structure model, calculating a space potential at the potential saddle point by electromagnetic field analysis using the selected structure model and tentative space charge distribution, comparing the calculated space potential and measured value to determine the tentative space charge distribution as a space charge distribution of the sample when an error between the space potential and the measured value is within a predetermined range, and calculating a surface charge distribution of the sample by electromagnetic field analysis based on the determined space charge distribution.
摘要:
A surface charge measuring distribution method includes the steps of irradiating a sample with a charged particle beam and charging a sample surface in a spot-like manner, irradiating the charged sample with the charged particle beam to measure a potential at a potential saddle point formed above the sample, selecting one of preset multiple structure models and a tentative space charge distribution associated with the selected structure model, calculating a space potential at the potential saddle point by electromagnetic field analysis using the selected structure model and tentative space charge distribution, comparing the calculated space potential and measured value to determine the tentative space charge distribution as a space charge distribution of the sample when an error between the space potential and the measured value is within a predetermined range, and calculating a surface charge distribution of the sample by electromagnetic field analysis based on the determined space charge distribution.
摘要:
An electrostatic latent image forming method for forming, on an image carrier, an electrostatic latent image that has a pattern where there are an irradiated area and a not-irradiated area in a mixed manner, the electrostatic latent image forming method comprises; adjusting an exposure condition of an irradiated area that is included in the irradiated area and is adjacent to the not-irradiated area so that an electric field intensity of an electrostatic latent image that corresponds to the not-irradiated area is increased so as to prevent adhesion of a developer, and irradiating the image carrier with light under the adjusted exposure condition.
摘要:
An image forming method includes: exposing a surface of an image carrier with a light based on an image pattern including an image portion and a non-image portion to form an electrostatic latent image corresponding to the image pattern. The image portion is made up of a plurality of pixels. Some of the pixels that make up the image portion are exposed with light of a first output value that is higher than a prescribed optical output value when the entire pixels corresponding to the image portion are exposed over a prescribed time period.
摘要:
A method of measuring a total amount of latent image charge includes: scanning a sample with a charged particle beam, the sample having a charge distribution on a surface of the sample, the charge distribution being caused by forming an electrostatic latent image by exposure; measuring a state of a surface charge distribution on the sample based on a detection signal obtained by the scanning; obtaining an electric potential at a potential saddle point, the potential saddle point being formed by the surface charge distribution of the sample; obtaining an electrostatic latent image area, the electrostatic latent image being formed by the surface charge distribution of the sample; and performing a calculation using the electric potential at the potential saddle point and the electrostatic latent image area to measure a total amount of electric charge of the electrostatic latent image.
摘要:
An electrostatic latent image forming method for forming, on an image carrier, an electrostatic latent image that has a pattern where there are an irradiated area and a not-irradiated area in a mixed manner, the electrostatic latent image forming method comprises; adjusting an exposure condition of an irradiated area that is included in the irradiated area and is adjacent to the not-irradiated area so that an electric field intensity of an electrostatic latent image that corresponds to the not-irradiated area is increased so as to prevent adhesion of a developer, and irradiating the image carrier with light under the adjusted exposure condition.
摘要:
A display device includes a light source; a light deflector configured to deflect light emitted from the light source to scan as scanning light in a main scanning direction and a sub-scanning direction; a screen having a scanning area to be two-dimensionally scanned with the scanning light at a predetermined cycle, the scanning area having a first area and a second area that differ in position in the sub-scanning direction; a light receiver disposed on the screen, configured to detect the light scanning in each of the first area and the second area of the screen; and a control unit configured to adjust a position of the scanning light in the scanning area according to the number of scanning lines in each of the first area and the second area.
摘要:
There is provided a semiconductor device. An n-type transistor is formed on a (551) surface of a silicon substrate. A silicide layer region in contact with a diffusion region (heavily doped region) of the n-type transistor has a thickness not more than 5 nm. A metal layer region in contact with the silicide layer has a thickness of 25 nm (inclusive) to 400 nm (inclusive). A barrier height between the silicide layer region and the diffusion region has a minimum value in this thickness relationship.
摘要:
A semiconductor device disclosed in this description has a semiconductor substrate including an element region in which a semiconductor element is formed, and an upper surface electrode formed on an upper surface of the element region of the semiconductor substrate. The upper surface electrode has a first thickness region and a second thickness region which is thicker than the first thickness region, and a bonding wire is bonded on the second thickness region.
摘要:
An imaging optical system, an imaging device, and a digital apparatus have a four lens construction with positive, negative, positive, and negative refractive powers. A surface position at the maximum effective diameter of the second lens element is located on the object side than a surface vertex thereof. The fourth lens element has an inflection point at a position other than the intersection of the optical axis and the fourth lens element. The optical system satisfies the following conditions. 0.7 72 ν4>50, and 0.55