DEVICE AND METHOD FOR MEASURING SURFACE CHARGE DISTRIBUTION
    1.
    发明申请
    DEVICE AND METHOD FOR MEASURING SURFACE CHARGE DISTRIBUTION 有权
    用于测量表面电荷分布的装置和方法

    公开(公告)号:US20120059612A1

    公开(公告)日:2012-03-08

    申请号:US13224873

    申请日:2011-09-02

    IPC分类号: G06F19/00

    CPC分类号: G03G15/5037

    摘要: A surface charge measuring distribution method includes the steps of irradiating a sample with a charged particle beam and charging a sample surface in a spot-like manner, irradiating the charged sample with the charged particle beam to measure a potential at a potential saddle point formed above the sample, selecting one of preset multiple structure models and a tentative space charge distribution associated with the selected structure model, calculating a space potential at the potential saddle point by electromagnetic field analysis using the selected structure model and tentative space charge distribution, comparing the calculated space potential and measured value to determine the tentative space charge distribution as a space charge distribution of the sample when an error between the space potential and the measured value is within a predetermined range, and calculating a surface charge distribution of the sample by electromagnetic field analysis based on the determined space charge distribution.

    摘要翻译: 表面电荷测量分配方法包括以下步骤:用带电粒子束照射样品并以点样方式填充样品表面,用带电粒子束照射带电样品以测量在上述形成的电位鞍点处的电位 采样,选择一个预设的多重结构模型和与所选择的结构模型相关联的暂定空间电荷分布,通过使用所选择的结构模型和暂定空间电荷分布的电磁场分析来计算潜在鞍点处的空间电位,比较计算出的 空间电位和测量值,当空间电位和测量值之间的误差在预定范围内时,确定作为样本的空间电荷分布的暂定空间电荷分布,并且通过电磁场分析来计算样品的表面电荷分布 基于确定的空间ch arge分布。

    Device and method for measuring surface charge distribution
    2.
    发明授权
    Device and method for measuring surface charge distribution 有权
    用于测量表面电荷分布的装置和方法

    公开(公告)号:US08847158B2

    公开(公告)日:2014-09-30

    申请号:US13224873

    申请日:2011-09-02

    IPC分类号: H01J37/00 G03G15/00

    CPC分类号: G03G15/5037

    摘要: A surface charge measuring distribution method includes the steps of irradiating a sample with a charged particle beam and charging a sample surface in a spot-like manner, irradiating the charged sample with the charged particle beam to measure a potential at a potential saddle point formed above the sample, selecting one of preset multiple structure models and a tentative space charge distribution associated with the selected structure model, calculating a space potential at the potential saddle point by electromagnetic field analysis using the selected structure model and tentative space charge distribution, comparing the calculated space potential and measured value to determine the tentative space charge distribution as a space charge distribution of the sample when an error between the space potential and the measured value is within a predetermined range, and calculating a surface charge distribution of the sample by electromagnetic field analysis based on the determined space charge distribution.

    摘要翻译: 表面电荷测量分配方法包括以下步骤:用带电粒子束照射样品并以点样方式填充样品表面,用带电粒子束照射带电样品以测量在上述形成的电位鞍点处的电位 采样,选择一个预设的多重结构模型和与所选择的结构模型相关联的暂定空间电荷分布,通过使用所选择的结构模型和暂定空间电荷分布的电磁场分析来计算潜在鞍点处的空间电位,比较计算出的 空间电位和测量值,当空间电位和测量值之间的误差在预定范围内时,确定作为样本的空间电荷分布的暂定空间电荷分布,并且通过电磁场分析来计算样品的表面电荷分布 基于确定的空间ch arge分布。

    Electrostatic latent image forming method, electrostatic latent image forming apparatus, and image forming apparatus
    3.
    发明授权
    Electrostatic latent image forming method, electrostatic latent image forming apparatus, and image forming apparatus 有权
    静电潜像形成方法,静电潜像形成装置和图像形成装置

    公开(公告)号:US09146493B2

    公开(公告)日:2015-09-29

    申请号:US14174205

    申请日:2014-02-06

    摘要: An electrostatic latent image forming method for forming, on an image carrier, an electrostatic latent image that has a pattern where there are an irradiated area and a not-irradiated area in a mixed manner, the electrostatic latent image forming method comprises; adjusting an exposure condition of an irradiated area that is included in the irradiated area and is adjacent to the not-irradiated area so that an electric field intensity of an electrostatic latent image that corresponds to the not-irradiated area is increased so as to prevent adhesion of a developer, and irradiating the image carrier with light under the adjusted exposure condition.

    摘要翻译: 一种静电潜像形成方法,用于在图像载体上以混合方式形成具有照射区域和未照射区域的图案的静电潜像,所述静电潜像形成方法包括: 调整照射区域的照射区域的曝光条件,并且与未照射区域相邻,使得与未照射区域对应的静电潜像的电场强度增加,以防止粘附 的显影剂,并且在经调整的曝光条件下用光照射图像载体。

    Image forming method of exposing the surface of an image carrier with light and image forming apparatus
    4.
    发明授权
    Image forming method of exposing the surface of an image carrier with light and image forming apparatus 有权
    用光和图像形成装置曝光图像载体的表面的图像形成方法

    公开(公告)号:US09235154B2

    公开(公告)日:2016-01-12

    申请号:US14451815

    申请日:2014-08-05

    IPC分类号: B41J2/47 G03G15/043

    CPC分类号: G03G15/043

    摘要: An image forming method includes: exposing a surface of an image carrier with a light based on an image pattern including an image portion and a non-image portion to form an electrostatic latent image corresponding to the image pattern. The image portion is made up of a plurality of pixels. Some of the pixels that make up the image portion are exposed with light of a first output value that is higher than a prescribed optical output value when the entire pixels corresponding to the image portion are exposed over a prescribed time period.

    摘要翻译: 一种图像形成方法包括:基于包括图像部分和非图像部分的图像图案,用光曝光图像载体的表面,以形成与图像图案相对应的静电潜像。 图像部分由多个像素组成。 当对应于图像部分的整个像素在规定的时间段内曝光时,构成图像部分的一些像素被曝光,该光的第一输出值高于规定的光学输出值。

    Method of measuring total amount of latent image charge, apparatus measuring total amount of latent image charge, image forming method and image forming apparatus
    5.
    发明授权
    Method of measuring total amount of latent image charge, apparatus measuring total amount of latent image charge, image forming method and image forming apparatus 有权
    测定潜像电荷总量的方法,测定潜像电荷总量的装置,图像形成方法和图像形成装置

    公开(公告)号:US09008526B2

    公开(公告)日:2015-04-14

    申请号:US13756741

    申请日:2013-02-01

    摘要: A method of measuring a total amount of latent image charge includes: scanning a sample with a charged particle beam, the sample having a charge distribution on a surface of the sample, the charge distribution being caused by forming an electrostatic latent image by exposure; measuring a state of a surface charge distribution on the sample based on a detection signal obtained by the scanning; obtaining an electric potential at a potential saddle point, the potential saddle point being formed by the surface charge distribution of the sample; obtaining an electrostatic latent image area, the electrostatic latent image being formed by the surface charge distribution of the sample; and performing a calculation using the electric potential at the potential saddle point and the electrostatic latent image area to measure a total amount of electric charge of the electrostatic latent image.

    摘要翻译: 测量潜像电荷总量的方法包括:用带电粒子束扫描样品,样品在样品表面上具有电荷分布,电荷分布由曝光形成静电潜像引起; 基于通过扫描获得的检测信号,测量样品上的表面电荷分布的状态; 在电势鞍点处获得电位,通过样品的表面电荷分布形成电位鞍点; 获得静电潜像区域,静电潜像由样品的表面电荷分布形成; 并且使用电势鞍点和静电潜像区域的电位进行计算,以测量静电潜像的总电荷量。

    Display device, display system, mobile object, display control method, and recording medium storing program code

    公开(公告)号:US10962776B2

    公开(公告)日:2021-03-30

    申请号:US16779843

    申请日:2020-02-03

    IPC分类号: G02B27/01

    摘要: A display device includes a light source; a light deflector configured to deflect light emitted from the light source to scan as scanning light in a main scanning direction and a sub-scanning direction; a screen having a scanning area to be two-dimensionally scanned with the scanning light at a predetermined cycle, the scanning area having a first area and a second area that differ in position in the sub-scanning direction; a light receiver disposed on the screen, configured to detect the light scanning in each of the first area and the second area of the screen; and a control unit configured to adjust a position of the scanning light in the scanning area according to the number of scanning lines in each of the first area and the second area.

    SEMICONDUCTOR DEVICE
    8.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号:US20150054075A1

    公开(公告)日:2015-02-26

    申请号:US14501244

    申请日:2014-09-30

    摘要: There is provided a semiconductor device. An n-type transistor is formed on a (551) surface of a silicon substrate. A silicide layer region in contact with a diffusion region (heavily doped region) of the n-type transistor has a thickness not more than 5 nm. A metal layer region in contact with the silicide layer has a thickness of 25 nm (inclusive) to 400 nm (inclusive). A barrier height between the silicide layer region and the diffusion region has a minimum value in this thickness relationship.

    摘要翻译: 提供了一种半导体器件。 n型晶体管形成在硅衬底的(551)表面上。 与n型晶体管的扩散区域(重掺杂区域)接触的硅化物层区域的厚度不大于5nm。 与硅化物层接触的金属层区域的厚度为25nm(含)〜400nm(含)。 硅化物层区域和扩散区域之间的势垒高度在该厚度关系中具有最小值。

    Imaging optical system, imaging device, and digital apparatus
    10.
    发明授权
    Imaging optical system, imaging device, and digital apparatus 有权
    成像光学系统,成像设备和数字设备

    公开(公告)号:US08704937B2

    公开(公告)日:2014-04-22

    申请号:US13837623

    申请日:2013-03-15

    IPC分类号: H04N5/225 G02B9/34

    摘要: An imaging optical system, an imaging device, and a digital apparatus have a four lens construction with positive, negative, positive, and negative refractive powers. A surface position at the maximum effective diameter of the second lens element is located on the object side than a surface vertex thereof. The fourth lens element has an inflection point at a position other than the intersection of the optical axis and the fourth lens element. The optical system satisfies the following conditions. 0.7 72 ν4>50, and 0.55

    摘要翻译: 成像光学系统,成像装置和数字装置具有正,负,正和负折射力的四透镜结构。 第二透镜元件的最大有效直径处的表面位置位于物体侧,而不是其表面​​顶点。 第四透镜元件在光轴和第四透镜元件的交点以外的位置具有拐点。 光学系统满足以下条件。 0.7 72& ; 4> 50和0.55