Abstract:
A semiconductor device comprises a plurality of output pads bondable to an output pin, a plurality of reference pads bondable to a reference pin, and output driver circuitry with a control terminal for receiving a control signal and arranged to drive the plurality of output pads relative to the plurality of reference pads in dependence on the control signal. The output driver circuitry includes driver sections and selection circuitry. Each driver section is arranged to drive an output pad relative to the single reference pad in dependence on a respective section control signal. The reference pads are connected in a one-to-one relationship to the driver sections. The output pads are connected in a one-to-one relationship to the driver sections. The selection circuitry provides the respective section control signals to the driver sections in dependence on at least one selection signal and the control signal.
Abstract:
An oscillator circuit for providing an output clock signal is described. The oscillator circuit comprising a voltage reference, a first current source, first capacitor, first capacitor switch, second current source, second capacitor, second capacitor switch, first comparator, second comparator and flip-flop. The first comparator comprises a first chopper-stabilized comparator switchable between a compare phase and a zeroing phase in dependence on the output clock signal and arranged to operate in the compare phase in a first half-phase of the output clock signal to provide a first comparator output from comparing the first capacitor voltage to the reference voltage and in the zeroing phase in the second half-phase. The second comparator comprises a second chopper-stabilized comparator switchable between a respective compare phase and a respective zeroing phase in dependence on the output clock signal and arranged to operate in its compare phase in the second half-phase to obtain a second comparator output from comparing the second capacitor voltage to the reference voltage and in its zeroing phase in the first half-phase.
Abstract:
A semiconductor device comprises a substrate provided with a doping of a first type, on which an electronic circuit is provided surrounded by a circuit portion of the substrate provided with a doping of a second type; at least one pad for connecting the electronic circuit to an external device outside the substrate, surrounded by a pad portion provided with a doping of the second type; a sensing device comprising a sensor portion of the substrate provided with a doping of the first type, for sensing a parameter forming a measure for a local electrical potential of the substrate; and an evaluation unit connected to the sensing device, for providing an evaluation signal based on a difference between the parameter and a reference value.
Abstract:
A non-volatile memory device includes a voltage reference generator comprising a programmable voltage reference for generating a voltage signal having a programmable voltage level. In an embodiment, the programmable voltage reference provides the voltage signals for a wordline driver and/or a bitline current generator of the non-volatile memory device. The programmable voltage reference may comprise a Digital-to-Analog converter coupled between first and second supply voltages. A programmable current reference is also disclosed.
Abstract:
A wordline driver, for a non-volatile memory device, comprises a wordline driver output, a first power source, adapted to provide an erase level voltage for erasing portions of the non-volatile memory device, a second power source, adapted to provide read and program level voltages for reading and programming portions of the non-volatile memory device and first switching means, including an isolation transistor, adapted to connect the wordline driver output to a one of the first and second power sources dependent upon an operating mode of the wordline driver. The wordline driver further comprises a programmable switch controller for providing a variable control signal to a control electrode of the isolation transistor. The programmable switch controller is arranged to set the variable control signal to a value dependent upon the operating parameters of the non-volatile memory device and such that the endurance of the isolation transistor is maximised.
Abstract:
A semiconductor device comprising a substrate and an electronic circuit thereon is described. The electronic circuit comprises a first voltage provider node, a second voltage provider node, and an intermediary node connected to the first and second voltage provider node by a first and second network with a first and second resistance, respectively. The substrate is susceptible to conducting a substrate current. The semiconductor device further comprises a substrate current sensor. The first network is arranged to reduce the first resistance in response to the substrate current sensor signaling an increase of the substrate current and vice versa. Similarly, the second network is arranged to reduce the second resistance in response to the substrate current sensor signaling an increase of the substrate current and vice versa.A method of operating a semiconductor device is also disclosed.
Abstract:
A signalling circuit for a signal channel of a communication network comprises a communication network terminal connectable to the signal channel and to a voltage supply; an input terminal connectable to receive a transmit signal; a driver device comprising a first driver terminal connected to the communication network terminal, a second driver terminal connected to ground, and a driver control terminal connected to the input terminal; wherein the driver device is arranged to connect the communication network terminal to ground in response to a transition from a low to a high voltage driver control signal state of a driver control signal received at the driver control terminal. And the signalling circuit comprises a feedback circuit connected to the first driver terminal and the driver control terminal and comprising a capacitive device; and a pull-down device arranged to connect the driver control terminal to ground after a predefined delay after a transition of the transmit signal from a low to a high voltage transmit signal state.
Abstract:
A semiconductor device comprises a plurality of output pads bondable to an output pin, a plurality of reference pads bondable to a reference pin, and output driver circuitry with a control terminal for receiving a control signal and arranged to drive the plurality of output pads relative to the plurality of reference pads in dependence on the control signal. The output driver circuitry includes driver sections and selection circuitry. Each driver section is arranged to drive an output pad relative to the single reference pad in dependence on a respective section control signal. The reference pads are connected in a one-to-one relationship to the driver sections. The output pads are connected in a one-to-one relationship to the driver sections. The selection circuitry provides the respective section control signals to the driver sections in dependence on at least one selection signal and the control signal.
Abstract:
A semiconductor device includes a substrate on which an electronic circuit is provided. Two or more pads may be present which can connect the electronic circuit to an external device outside the substrate. A current meter is electrically in contact with at least a part of the substrate and/or the pad. The meter can measure a parameter forming a measure for an aggregate amount of a current flowing between the substrate and said pads. A control unit is connected to the current meter and the electronic circuit, for controlling the electronic circuit based on the measured parameter.
Abstract:
A semiconductor device includes a substrate on which an electronic circuit is provided. One or more pads may be present which can connect the electronic circuit to an external device outside the substrate. A current meter is electrically in contact with at least a part of the substrate and/or the pad. The meter can measure a parameter forming a measure for an amount of a current flowing between the substrate and at least one of the at least one pad. A control unit is connected to the current meter and the electronic circuit, for controlling the electronic circuit based on the measured parameter.