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    CELL PROGRAMMING VERIFICATION
    1.
    发明申请
    CELL PROGRAMMING VERIFICATION 审中-公开

    公开(公告)号：US20180068720A1

    公开(公告)日：2018-03-08

    申请号：US15690148

    申请日：2017-08-29

    Applicant: Intel Corporation

    Inventor： Daniel J. Chu ,  Raymond W. Zeng ,  Doyle Rivers

    IPC: G11C13/00

    CPC classification number: G11C13/0004 ,  G11C13/0033 ,  G11C13/0064 ,  G11C13/0069

    Abstract: Technology for verifying cell programming for a phase change memory array is disclosed. In an example, a method may include sending a reset pulse to a phase change memory cell. The method may further include sensing a threshold voltage of the phase change memory cell in response to applying first and second verify voltages across the phase change memory cell, where the second verify voltage is lower than the first verify voltage. The method may also include determining whether the threshold voltage of the phase change memory cell was below the first or second verify voltages.

    Cell programming verification
    3.
    发明授权
    Cell programming verification 有权

    公开(公告)号：US10325652B2

    公开(公告)日：2019-06-18

    申请号：US15690148

    申请日：2017-08-29

    Applicant: Intel Corporation

    Inventor： Daniel J. Chu ,  Raymond W. Zeng ,  Doyle Rivers

    IPC: G11C13/00

    Abstract: Technology for verifying cell programming for a phase change memory array is disclosed. In an example, a method may include sending a reset pulse to a phase change memory cell. The method may further include sensing a threshold voltage of the phase change memory cell in response to applying first and second verify voltages across the phase change memory cell, where the second verify voltage is lower than the first verify voltage. The method may also include determining whether the threshold voltage of the phase change memory cell was below the first or second verify voltages.

    Thermal monitoring of memory resources
    4.
    发明授权
    Thermal monitoring of memory resources 有权

    公开(公告)号：US10088880B2

    公开(公告)日：2018-10-02

    申请号：US14837372

    申请日：2015-08-27

    Applicant: Intel Corporation

    Inventor： Rajesh Sundaram ,  Muthukumar P. Swaminathan ,  Doyle Rivers

    IPC: G06F1/20 ,  G06F1/32

    Abstract: Data reliability and integrity may be compromised when memory resources used to store the data reach elevated temperatures. A sensor in the memory resource may monitor the temperature of the memory resource in real-time. A comparator in the memory resource may indicate a high temperature condition to a memory controller. The memory controller, in response to the high temperature condition, can restrict or halt data flow to the memory resource. When the real-time temperature of the memory resource falls below a defined threshold, the memory controller may resume data flow to the memory resource.

    ALTERNATE CONTROL SETTINGS
    10.
    发明申请
    ALTERNATE CONTROL SETTINGS 审中-公开

    公开(公告)号：US20160260499A1

    公开(公告)日：2016-09-08

    申请号：US15018109

    申请日：2016-02-08

    Applicant: Intel Corporation

    Inventor： Julie M. Walker ,  Doyle Rivers

    IPC: G11C17/18 ,  G11C17/16

    CPC classification number: G11C17/18 ,  G11C7/20 ,  G11C16/20 ,  G11C17/165

    Abstract: An integrated circuit, that may be a part of an electronic system, may include a first set of storage cells to store settings and a second set of storage cells to store alternate settings. At least one control cell may also be included in the integrated circuit. The at least one control cell may indicate whether to use the settings stored in the first set of storage cells, or the alternate settings stored in the second set of storage cells, to control one or more operating parameters of the integrated circuit. Methods for using the alternate setting are also described.

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