公开(公告)号：US08569130B2

公开(公告)日：2013-10-29

申请号：US13192763

申请日：2011-07-28

申请人： James Mathew ,  Gordon Haller ,  Ronald A. Weimer ,  John Hopkins ,  Vinayak K. Shamanna ,  Sanjeev Sapra

发明人： James Mathew ,  Gordon Haller ,  Ronald A. Weimer ,  John Hopkins ,  Vinayak K. Shamanna ,  Sanjeev Sapra

IPC分类号： H01L21/336

CPC分类号： H01L29/78 ,  H01L21/764 ,  H01L27/11524 ,  H01L27/1157

摘要： Methods of forming air gaps in memory arrays and memory arrays with air gaps thus formed are disclosed. One such method may include forming an isolation region, having a first dielectric, through a charge-storage structure that is over a semiconductor, the isolation region extending into the semiconductor; forming a second dielectric over the isolation region and charge-storage structure; and forming an air gap in the isolation region so that the air gap passes through the charge-storage structure and so that a thickness of the first dielectric is between the air gap and the second dielectric.

摘要翻译： 公开了在如此形成的具有气隙的存储器阵列和存储器阵列中形成气隙的方法。 一种这样的方法可以包括通过半导体上的电荷存储结构形成具有第一电介质的隔离区域，所述隔离区域延伸到半导体中; 在隔离区域和电荷存储结构上形成第二电介质; 并且在隔离区域中形成气隙，使得气隙通过电荷存储结构，并且第一电介质的厚度在气隙和第二电介质之间。

公开(公告)号：US20130026600A1

公开(公告)日：2013-01-31

申请号：US13192763

申请日：2011-07-28

申请人： James Matthew ,  Gordon Haller ,  Ronald A. Weimer ,  John Hopkins ,  Vinayak K. Shamanna ,  Sanjeev Sapra

发明人： James Matthew ,  Gordon Haller ,  Ronald A. Weimer ,  John Hopkins ,  Vinayak K. Shamanna ,  Sanjeev Sapra

IPC分类号： H01L29/06 ,  H01L21/764

CPC分类号： H01L29/78 ,  H01L21/764 ,  H01L27/11524 ,  H01L27/1157

摘要： Methods of forming air gaps in memory arrays and memory arrays with air gaps thus formed are disclosed. One such method may include forming an isolation region, having a first dielectric, through a charge-storage structure that is over a semiconductor, the isolation region extending into the semiconductor; forming a second dielectric over the isolation region and charge-storage structure; and forming an air gap in the isolation region so that the air gap passes through the charge-storage structure and so that a thickness of the first dielectric is between the air gap and the second dielectric.

摘要翻译： 公开了在如此形成的具有气隙的存储器阵列和存储器阵列中形成气隙的方法。 一种这样的方法可以包括通过半导体上的电荷存储结构形成具有第一电介质的隔离区域，所述隔离区域延伸到半导体中; 在隔离区域和电荷存储结构上形成第二电介质; 并且在隔离区域中形成气隙，使得气隙通过电荷存储结构，并且第一电介质的厚度在气隙和第二电介质之间。

公开(公告)号：US08907396B2

公开(公告)日：2014-12-09

申请号：US13343087

申请日：2012-01-04

申请人： John Hopkins ,  James Mathew ,  Jie Sun ,  Gordon Haller

发明人： John Hopkins ,  James Mathew ,  Jie Sun ,  Gordon Haller

IPC分类号： H01L29/76 ,  H01L29/94

CPC分类号： H01L21/76224 ,  H01L27/11524 ,  H01L27/1157

摘要： Devices, memory arrays, and methods are disclosed. In an embodiment, one such device has a source/drain zone that has first and second active regions, and an isolation region and a dielectric plug between the first and second active regions. The dielectric plug may extend below upper surfaces of the first and second active regions and may be formed of a dielectric material having a lower removal rate than a dielectric material of the isolation region for a particular isotropic removal chemistry.

摘要翻译： 公开了设备，存储器阵列和方法。 在一个实施例中，一个这样的器件具有源极/漏极区域，其具有第一和第二有源区域，以及在第一和第二有源区域之间的隔离区域和电介质插塞。 电介质插塞可以延伸到第一和第二有源区域的上表面之下，并且可以由对于特定各向同性去除化学物质具有比隔离区域的电介质材料更低的去除速率的电介质材料形成。

公开(公告)号：US20130168756A1

公开(公告)日：2013-07-04

申请号：US13343087

申请日：2012-01-04

申请人： John Hopkins ,  James Mathew ,  Jie Sun ,  Gordon Haller

发明人： John Hopkins ,  James Mathew ,  Jie Sun ,  Gordon Haller

IPC分类号： H01L29/792 ,  H01L21/336

CPC分类号： H01L21/76224 ,  H01L27/11524 ,  H01L27/1157

摘要： Devices, memory arrays, and methods are disclosed. In an embodiment, one such device has a source/drain zone that has first and second active regions, and an isolation region and a dielectric plug between the first and second active regions. The dielectric plug may extend below upper surfaces of the first and second active regions and may be formed of a dielectric material having a lower removal rate than a dielectric material of the isolation region for a particular isotropic removal chemistry.

摘要翻译： 公开了设备，存储器阵列和方法。 在一个实施例中，一个这样的器件具有源极/漏极区域，其具有第一和第二有源区域，以及在第一和第二有源区域之间的隔离区域和电介质插塞。 电介质插塞可以延伸到第一和第二有源区域的上表面之下，并且可以由对于特定各向同性去除化学物质具有比隔离区域的电介质材料更低的去除速率的电介质材料形成。

公开(公告)号：US09847340B2

公开(公告)日：2017-12-19

申请号：US14227217

申请日：2014-03-27

申请人： Darwin Fan ,  Sateesh Koka ,  Gordon Haller ,  John Hopkins ,  Shyam Surthi ,  Anish Khandekar

发明人： Darwin Fan ,  Sateesh Koka ,  Gordon Haller ,  John Hopkins ,  Shyam Surthi ,  Anish Khandekar

IPC分类号： H01L29/788 ,  H01L27/11524 ,  H01L27/11556

CPC分类号： H01L27/11524 ,  H01L21/28273 ,  H01L27/11556

摘要： 3D NAND memory structures and related method are provided. In some embodiments such structures can include a control gate material and a floating gate material disposed between a first insulating layer and a second insulating layer, an interpoly dielectric (IPD) layer disposed between the floating gate material and control gate material such that the IPD layer electrically isolates the control gate material from the floating gate material, and a tunnel dielectric material deposited on the floating gate material opposite the control gate material.

公开(公告)号：US20150279851A1

公开(公告)日：2015-10-01

申请号：US14227217

申请日：2014-03-27

申请人： Darwin Fan ,  Sateesh Koka ,  Gordon Haller ,  John Hopkins ,  Shyam Surthi ,  Anish Khandekar

发明人： Darwin Fan ,  Sateesh Koka ,  Gordon Haller ,  John Hopkins ,  Shyam Surthi ,  Anish Khandekar

IPC分类号： H01L27/115 ,  H01L29/423 ,  H01L21/28

CPC分类号： H01L27/11524 ,  H01L21/28273 ,  H01L27/11556

摘要： 3D NAND memory structures and related method are provided. In some embodiments such structures can include a control gate material and a floating gate material disposed between a first insulating layer and a second insulating layer, an interpoly dielectric (IPD) layer disposed between the floating gate material and control gate material such that the IPD layer electrically isolates the control gate material from the floating gate material, and a tunnel dielectric material deposited on the floating gate material opposite the control gate material.

摘要翻译： 提供3D NAND存储器结构及相关方法。 在一些实施例中，这样的结构可以包括设置在第一绝缘层和第二绝缘层之间的控制栅极材料和浮置栅极材料，设置在浮置栅极材料和控制栅极材料之间的多层电介质（IPD）层，使得IPD层 将控制栅极材料与浮动栅极材料电隔离，以及沉积在与控制栅极材料相对的浮动栅极材料上的隧道电介质材料。

公开(公告)号：US20180108669A1

公开(公告)日：2018-04-19

申请号：US15296858

申请日：2016-10-18

申请人： Hongbin Zhu ,  Zhenyu Lu ,  Gordon Haller ,  Jie Sun ,  Randy J. Koval ,  John Hopkins

发明人： Hongbin Zhu ,  Zhenyu Lu ,  Gordon Haller ,  Jie Sun ,  Randy J. Koval ,  John Hopkins

IPC分类号： H01L27/115 ,  H01L29/10 ,  H01L29/51 ,  H01L21/311 ,  H01L21/28 ,  H01L21/285

CPC分类号： H01L27/11556 ,  H01L21/28273 ,  H01L21/28525 ,  H01L21/28556 ,  H01L21/31111 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/1037 ,  H01L29/513

摘要： Some embodiments include a semiconductor device having a stack structure including a source comprising polysilicon, an etch stop of oxide on the source, a select gate source on the etch stop, a charge storage structure over the select gate source, and a select gate drain over the charge storage structure. The semiconductor device may further include an opening extending vertically into the stack structure to a level adjacent to the source. A channel comprising polysilicon may be formed on a side surface and a bottom surface of the opening. The channel may contact the source at a lower portion of the opening, and may be laterally separated from the charge storage structure by a tunnel oxide. A width of the channel adjacent to the select gate source is greater than a width of the channel adjacent to the select gate drain.

公开(公告)号：US20060275502A1

公开(公告)日：2006-12-07

申请号：US11431434

申请日：2006-05-10

申请人： John Hopkins

发明人： John Hopkins

IPC分类号： A61K33/00

CPC分类号： A61K33/00

摘要： Embodiments of the present invention provide for methods of cleaning and disinfecting the vaginal area using electrolyzed water. The electrolyzed water may be applied to both the interior and exterior of the vaginal area. A particularly preferred embodiment provides for the application of Type C water to the vaginal area. Additional preferred embodiments provide for the application of Type B water to the vaginal area followed by the application of Type A water or Type C water to the vaginal area.

摘要翻译： 本发明的实施例提供了使用电解水清洗和消毒阴道区域的方法。 电解水可以施加到阴道区域的内部和外部。 特别优选的实施方案提供了将C型水应用于阴道区域。 另外优选的实施方案提供将B型水应用于阴道区域，然后将A型水或C型水应用于阴道区域。

公开(公告)号：US20060263240A1

公开(公告)日：2006-11-23

申请号：US11429768

申请日：2006-05-08

申请人： John Hopkins

发明人： John Hopkins

IPC分类号： A61L2/18

CPC分类号： A61L2/0088 ,  A61L2/035 ,  A61L2/18

摘要： Embodiments of the present invention provide for a method of cleaning and disinfecting the skin using electrolyzed water. A particularly preferred embodiment provides for the application of Type C water to the skin. Additional preferred embodiments provide for the application of Type B water to the skin followed by the application of Type A water or Type C water to the skin.

摘要翻译： 本发明的实施方案提供了一种使用电解水清洁和消毒皮肤的方法。 特别优选的实施方案提供了将C型水应用于皮肤。 另外优选的实施方案提供了将B型水应用于皮肤，然后将A型水或C型水施用于皮肤。

公开(公告)号：US20160055154A1

公开(公告)日：2016-02-25

申请号：US14465868

申请日：2014-08-22

申请人： Chuck Surack ,  John Hopkins ,  Michael Ross ,  Mike Clem ,  Greg Wardwell ,  Dan Schafer

发明人： Chuck Surack ,  John Hopkins ,  Michael Ross ,  Mike Clem ,  Greg Wardwell ,  Dan Schafer

IPC分类号： G06F17/30 ,  G06T7/00

CPC分类号： G06F16/5838

摘要： A computer implemented method for searching an electronic database of product images, said method comprising the steps of: accessing a plurality of digital images of each of a plurality of products; segregating said images by color and product type; calculating the number of pixels for each color in each of said product images; dividing said colors into a plurality of discrete segments within the visible color spectrum; averaging the number of pixels for each color for each said image of a single product; applying a multiplier to blocks that exist within a cohesive quantized color group; normalizing said pixel count based on the percentage of the number of pixels within a predetermined range; storing said histogram into a database wherein each discrete segment has one value within the visual spectrum; and sorting the histograms in order of highest percentage of each color in the profile to lowest.

摘要翻译： 一种用于搜索产品图像的电子数据库的计算机实现方法，所述方法包括以下步骤：访问多个产品中的每一个的多个数字图像; 通过颜色和产品类型隔离所述图像; 计算每个所述产品图像中的每种颜色的像素数; 将所述颜色分成可见色谱内的多个离散片段; 对单个产品的每个所述图像的每种颜色的像素数进行平均; 对存在于内聚量化颜色组中的块应用乘数; 基于在预定范围内的像素数量的百分比对所述像素计数进行归一化; 将所述直方图存储到数据库中，其中每个离散段在视觉谱内具有一个值; 并按照每个颜色在配置文件中最高百分比的顺序排列直方图到最低。