摘要:
A contaminant trap is used in an EUV radiation source apparatus. An EUV radiation beam is generated and focused through a low pressure gaseous atmosphere into a virtual source point. The EUV radiation creates a plasma in the low pressure hydrogen atmosphere through which it passes. A contaminant trap including electrodes is located in or around radiation beam as it approaches the virtual source point. A DC biasing source is connected to the electrodes to create an electric field oriented to deflect out of the beam path contaminant particles that have been negatively charged by the plasma. Additional RF electrodes and/or an ionizer enhance the plasma to increase the charging of the particles. The deflecting electrodes can be operated with RF bias for a short time, to ensure dissipation of the enhanced plasma.
摘要:
A system for removing contaminant particles from the path of the beam of EUV radiation is provided in which at least a first AC voltage is provided to a pair of electrodes on opposite sides of the path of the beam of EUV radiation as a first stage of a regime of voltages and, as a second stage of the regime of voltages, a DC voltage is provided to the electrodes.
摘要:
A lithographic apparatus for patterning a beam of radiation and projecting it onto a substrate, comprising at least two spectral purity filters configured to reduce the intensity of radiation in the beam of radiation in at least one undesirable range of radiation wavelength, wherein the two spectral purity filters are provided with different radiation filtering structures from each other.
摘要:
A radiation source for generating extreme ultraviolet radiation for a lithographic apparatus has a debris mitigation device comprising a nozzle arranged at or near an intermediate focus (IF) of the beam of radiation. The nozzle serves to direct a flow of gas (330) towards the radiation source or collector optic in order to deflect particulate debris (43) emitted by the radiation source.
摘要:
A lithographic apparatus includes a radiation source configured to produce a radiation beam, and a support configured to support a patterning device. The patterning device is configured to impart the radiation beam with a pattern to form a patterned radiation beam. A chamber is located between the radiation source and patterning device. The chamber contains at least one optical component configured to reflect the radiation beam, and is configured to permit radiation from the radiation source to pass therethrough. A membrane is configured to permit the passage of the radiation beam, and to prevent the passage of contamination particles through the membrane. A particle trapping structure is configured to permit gas to flow along an indirect path from inside the chamber to outside the chamber. The indirect path is configured to substantially prevent the passage of contamination particles from inside the chamber to outside the chamber.
摘要:
A radiation source is configured to generate extreme ultraviolet radiation. The radiation source includes a plasma formation site located at a position in which a fuel will be contacted by a beam of radiation to form a plasma, an outlet configured to allow gas to exit the radiation source, and a contamination trap at least partially located inside the outlet. The contamination trap is configured to trap debris particles that are generated with the formation of the plasma.
摘要:
A lithographic apparatus includes a radiation source configured to produce a radiation beam, and a support configured to support a patterning device. The patterning device is configured to impart the radiation beam with a pattern to form a patterned radiation beam. A chamber is located between the radiation source and patterning device. The chamber contains at least one optical component configured to reflect the radiation beam, and is configured to permit radiation from the radiation source to pass therethrough. A membrane is configured to permit the passage of the radiation beam, and to prevent the passage of contamination particles through the membrane. A particle trapping structure is configured to permit gas to flow along an indirect path from inside the chamber to outside the chamber. The indirect path is configured to substantially prevent the passage of contamination particles from inside the chamber to outside the chamber.
摘要:
A spectral purity filter includes a body of material, through which a plurality of apertures extend. The apertures are arranged to suppress radiation having a first wavelength and to allow at least a portion of radiation having a second wavelength to be transmitted through the apertures. The second wavelength of radiation is shorter than the first wavelength of radiation. The body of material is formed from a material having a bulk reflectance of substantially greater than or equal to 70% at the first wavelength of radiation. The material has a melting point above 1000° C.
摘要:
A lithographic apparatus for patterning a beam of radiation and projecting it onto a substrate, comprising at least two spectral purity filters configured to reduce the intensity of radiation in the beam of radiation in at least one undesirable range of radiation wavelength, wherein the two spectral purity filters are provided with different radiation filtering structures from each other.