公开(公告)号：US6104739A

公开(公告)日：2000-08-15

申请号：US998071

申请日：1997-12-24

申请人： Jin Hong ,  Hyung B. Kim ,  Toshihiko Makino

发明人： Jin Hong ,  Hyung B. Kim ,  Toshihiko Makino

IPC分类号： H01S5/00 ,  H01S5/026 ,  H01S5/04 ,  H01S5/06 ,  H01S5/0625 ,  H01S5/12 ,  H01S5/22 ,  H01S5/40 ,  H01S3/19 ,  H01S3/08

CPC分类号： H01S5/06258 ,  H01S5/1228 ,  H01S5/4025 ,  H01S5/026 ,  H01S5/041 ,  H01S5/0612 ,  H01S5/1215 ,  H01S5/22 ,  H01S5/4031 ,  H01S5/4087

摘要： A one dimensional series of complex coupled (gain or loss coupled) DFB semiconductor lasers is disclosed. Each laser comprises a multiple quantum well active region and a complex coupled grating having corrugations along a cavity length direction formed by periodically etching grooves through the active region. The grating has a period comprising a first section and a second section, wherein substantially all quantum wells are etched away from the second section providing no substantial photon generation in the second section. The depth of etching is defined so as to provide a substantial insensitivity of each laser to the external feedback and random facet variations and to ensure no substantial interaction between lasers in the series. The lasers in the series may further comprise means for tuning laser wavelengths around corresponding lasing modes and/or means for switching between the lasing modes. The series of lasers is also capable of simultaneous multi-wavelength generation, with the number of generated wavelengths being equal to a number of lasers in the series excited above threshold levels.

摘要翻译： 公开了一种复合耦合（增益或损耗耦合）DFB半导体激光器系列。 每个激光器包括多量子阱有源区域和复合耦合光栅，其具有沿着通过周期性蚀刻通过有源区域的沟槽形成的空腔长度方向的波纹。 光栅具有包括第一部分和第二部分的周期，其中基本上所有的量子阱从第二部分被蚀刻掉，从而在第二部分中不产生实质的光子产生。 蚀刻深度被定义为使得每个激光器对外部反馈和随机小面变化的实质性不敏感性并且确保该系列中的激光器之间没有实质的相互作用。 该系列中的激光器还可以包括用于调整激光波长在相应的激光模式周围的装置和/或在激光模式之间切换的装置。 该系列激光器还能够同时进行多波长生成，其中生成的波长的数量等于在阈值水平以上激发的系列中的激光器的数量。

公开(公告)号：US5936994A

公开(公告)日：1999-08-10

申请号：US933529

申请日：1997-09-18

申请人： Jin Hong ,  Hyung B. Kim ,  Toshi Makino

发明人： Jin Hong ,  Hyung B. Kim ,  Toshi Makino

IPC分类号： H01S5/00 ,  H01S5/0625 ,  H01S5/065 ,  H01S5/12 ,  H01S3/08 ,  H01S3/10

CPC分类号： H01S5/06258 ,  H01S5/1228

摘要： A complex coupled (gain coupled or loss coupled) distributed feedback (DFB) semiconductor laser, having two sections axially distinct along a cavity length direction, and two excitation means for independent pumping of corresponding sections of the laser in a master and slave type of pumping control, is provided. An extended continuous wavelength tuning range of the laser is obtained by selectively activating a left Bragg mode or a right Bragg mode across the stop band of the laser as a dominant lasing mode by the master and slave type of current injection control into different sections of the laser to alternate gain coupling and loss coupling mechanisms of laser operation, and further tuning a wavelength around the activated Bragg mode. Methods of operating the laser, enhancing a tuning range, and fabricating thereof are provided.

摘要翻译： 分布式反馈（DFB）半导体激光器，具有沿着腔长度方向轴向不同的两个部分的复耦合（增益耦合或损耗耦合）半导体激光器，以及两个激励装置，用于独立地泵浦主和从属类型的泵浦中的相应激光部分 控制。 激光器的延长的连续波长调谐范围通过主动和从属类型的电流注入控制选择性地激活激光器的阻带上的左布拉格模式或右布拉格模式作为主要的激光模式， 激光器交替增益耦合和损耗耦合机制的激光操作，并进一步调整激活的布拉格模式附近的波长。 提供操作激光的方法，增强调谐范围及其制造方法。

公开(公告)号：US06201824B1

公开(公告)日：2001-03-13

申请号：US09209860

申请日：1998-12-11

申请人： Jin Hong ,  Toshihiko Makino

发明人： Jin Hong ,  Toshihiko Makino

IPC分类号： H01S5125

CPC分类号： H01S5/06258 ,  H01S5/026 ,  H01S5/041 ,  H01S5/0612 ,  H01S5/1215 ,  H01S5/1228 ,  H01S5/22 ,  H01S5/4025 ,  H01S5/4031 ,  H01S5/4087

摘要： A two-dimensional matrix of complex coupled (gain or loss coupled) semiconductor DFB lasers is disclosed. The matrix includes several parallel branches of series lasers, each series having a plurality of lasers which are grown on the same wafer. The parallel branches are combined at either one end or both ends with either an integrated on-chip optical combiner or an external coupler to obtain a single optical output port. Each laser in the series comprises a multiple quantum well active region and a complex coupled grating having corrugations along a cavity length direction formed by periodic etching grooves through either the active region or the lossy QW region. The depth of etching is defined so as to provide a substantial insensitivity of each laser to the external feedback and random facet variations and to thereby ensure no substantial interaction between lasers in the series. Bragg wavelengths of lasers from different series interleave with each other or differ incrementally along a cavity length direction. The sub tuning wavelength range covered by one laser in the matrix falls outside of the stopbands of all other lasers which are not only in the same series but also physically close to the designated output port. The laser structure is capable of simultaneous multi-wavelength generation, and/or tunable selectable single wavelength operation, and/or reliable wavelength switching.

摘要翻译： 公开了复耦合（增益或损耗耦合）半导体DFB激光器的二维矩阵。 该矩阵包括串联激光器的几个平行分支，每个系列具有在同一晶片上生长的多个激光器。 并联支路在一端或两端与集成的片上光合并器或外部耦合器组合以获得单个光输出端口。 该系列中的每个激光器包括多量子阱有源区和复合耦合光栅，其具有通过有源区或有损QW区通过周期性蚀刻凹槽形成的沿着空腔长度方向的波纹。 蚀刻深度被定义为使每个激光器对外部反馈和随机小面变化的实质性不敏感性，从而确保该系列中的激光器之间没有实质的相互作用。 来自不同系列的激光器的布拉格波长彼此交错或沿着空腔长度方向递增地不同。 矩阵中的一个激光器覆盖的子调谐波长范围落在所有其他不仅在同一系列中，而且物理上靠近指定输出端口的其他激光器的阻带之外。 激光器结构能够同时进行多波长生成和/或可调谐可选单波长操作和/或可靠的波长切换。

公开(公告)号：US20210006044A1

公开(公告)日：2021-01-07

申请号：US17024342

申请日：2020-09-17

申请人： Jin Hong ,  Ranjeet Kumar ,  Meer Nazmus Sakib ,  Haisheng Rong ,  Kimchau Nguyen ,  Mengyuan Huang ,  Aliasghar Eftekhar ,  Christian Malouin ,  Siamak Amiralizadeh Asl ,  Saeed Fathololoumi ,  Ling Liao ,  Yuliya Akulova ,  Olufemi Dosunmu ,  Ansheng Liu

发明人： Jin Hong ,  Ranjeet Kumar ,  Meer Nazmus Sakib ,  Haisheng Rong ,  Kimchau Nguyen ,  Mengyuan Huang ,  Aliasghar Eftekhar ,  Christian Malouin ,  Siamak Amiralizadeh Asl ,  Saeed Fathololoumi ,  Ling Liao ,  Yuliya Akulova ,  Olufemi Dosunmu ,  Ansheng Liu

IPC分类号： H01S5/50 ,  G02B27/28 ,  H01S5/026 ,  H01S5/30

摘要： Embodiments of the present disclosure are directed to a silicon photonics integrated apparatus that includes an input to receive an optical signal, a splitter optically coupled to the input to split the optical signal at a first path and a second path, a polarization beam splitter and rotator (PBSR) optically coupled with the first path or the second path, and a semiconductor optical amplifier (SOA) optically coupled with the first path or the second path and disposed between the splitter and the PBSR. Other embodiments may be described and/or claimed.

公开(公告)号：US20100132779A1

公开(公告)日：2010-06-03

申请号：US12597496

申请日：2008-05-29

申请人： Jin Hong ,  Jae-Ho Kim ,  Yong-Woo Shin

发明人： Jin Hong ,  Jae-Ho Kim ,  Yong-Woo Shin

IPC分类号： H01L31/0352 ,  H01L31/0232 ,  H01L31/18

CPC分类号： H01L31/035281 ,  H01L31/03529 ,  H01L31/0392 ,  H01L31/056 ,  H01L31/075 ,  Y02E10/52 ,  Y02E10/548

摘要： A solar cell includes a first electrode on a substrate; a plurality of pillars on the first electrode; a semiconductor layer on the first electrode, wherein a surface area of the semiconductor layer is greater than a surface area of the first electrode; and a second electrode over the semiconductor layer.

摘要翻译： 太阳能电池包括在基板上的第一电极; 第一电极上的多个柱; 所述第一电极上的半导体层，其中所述半导体层的表面积大于所述第一电极的表面积; 和半导体层上的第二电极。

公开(公告)号：US20100099851A1

公开(公告)日：2010-04-22

申请号：US12581723

申请日：2009-10-19

申请人： Jin Hong ,  Scott D. Seiwert ,  Lawrence M. Blatt

发明人： Jin Hong ,  Scott D. Seiwert ,  Lawrence M. Blatt

IPC分类号： C07K14/555

CPC分类号： A61K38/212

摘要： The present invention provides synthetic Type I interferon receptor polypeptide agonists comprising consensus or hybrid Type I interferon receptor polypeptide agonists, containing one or more native or non-native glycosylation sites. The present invention further provides oral formulations of protease-resistant or protease-resistant, hyperglycosylated polypeptide variants, which polypeptide variants lack at least one protease cleavage site found in a parent polypeptide, and thus exhibit increased protease resistance compared to the parent polypeptide, which polypeptide variants further include (1) a carbohydrate moiety covalently linked to at least one non-native glycosylation site not found in the parent protein therapeutic or (2) a carbohydrate moiety covalently linked to at least one native glycosylation site found but not glycosylated in the parent protein therapeutic. The present invention further provides compositions, including oral pharmaceutical compositions, comprising the synthetic Type I interferon receptor polypeptide agonist, the hyperglycosylated polypeptide variant, the protease-resistant polypeptide variant, or the hyperglycosylated, protease-resistant polypeptide variant. The present invention further provides containers, devices, and kits comprising the synthetic Type I interferon receptor polypeptide agonist, the hyperglycosylated polypeptide variant, the protease-resistant polypeptide variant, or the hyperglycosylated, protease-resistant polypeptide variant. The present invention further provides therapeutic methods involving administering an effective amount of an oral pharmaceutical composition comprising a synthetic Type I interferon receptor polypeptide agonist, a hyperglycosylated polypeptide variant, a protease-resistant polypeptide variant, or a hyperglycosylated, protease-resistant polypeptide variant to an individual in need thereof.

公开(公告)号：US07442272B2

公开(公告)日：2008-10-28

申请号：US10875950

申请日：2004-06-25

申请人： Jeong-sic Jeon ,  Jin Hong

发明人： Jeong-sic Jeon ,  Jin Hong

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/321 ,  H01J37/32623 ,  H04L25/067 ,  H04L27/2647 ,  H04L2025/03414

摘要： An apparatus for improving the density and uniformity of plasma in the manufacture of a semiconductor device features a plasma chamber having a complex geometry that causes plasma density to be increased at the periphery or edge of a semiconductor wafer being processed, thereby compensating for a plasma density that is typically more concentrated at the center of the semiconductor wafer. By mounting a target semiconductor wafer in a chamber region that has a cross-sectional area that is smaller than a cross-sectional area of a plasma source chamber region, a predetermine flow of generated plasma from the source becomes concentrated as it moves toward the semiconductor wafer, particularly at the periphery of the semiconductor wafer. This provides a more uniform plasma density across the entire surface of the target semiconductor wafer than has heretofore been available.

摘要翻译： 在半导体器件的制造中，用于改善等离子体的密度和均匀性的装置具有等离子体腔室，其具有复杂的几何形状，这使得等离子体密度在被处理的半导体晶片的周边或边缘处增加，从而补偿等离子体密度 这通常更集中在半导体晶片的中心。 通过将目标半导体晶片安装在截面积小于等离子体源室区域的截面面积的室区域中，来自源极的产生的等离子体的预定流量随着朝向半导体 晶片，特别是在半导体晶片的周边。 这提供了比目前可用的目标半导体晶片的整个表面上更均匀的等离子体密度。

公开(公告)号：US20060290636A1

公开(公告)日：2006-12-28

申请号：US11205994

申请日：2005-08-17

申请人： Jin Hong

发明人： Jin Hong

IPC分类号： G09G3/36

CPC分类号： G09G3/3688 ,  G09G2310/0248 ,  G09G2330/021

摘要： A method for driving a liquid crystal display is provided. In the method, a first pre-charge voltage and a second pre-charge voltage are generated from an external voltage source separated from a data driving integrated circuit. A data line is pre-charged with the first pre-charge voltage during a first period. The data line is charged to reach a target value of a first data signal during a second period. The data line is pre-charged with the second pre-charge voltage during a third period. The data line is charged to reach a target value of a second data signal during a fourth period. A liquid crystal display device is capable of reducing the heating value of a driver that drives the data line.

摘要翻译： 提供了一种用于驱动液晶显示器的方法。 在该方法中，从与数据驱动集成电路分离的外部电压源产生第一预充电电压和第二预充电电压。 数据线在第一时段期间被预先充电第一预充电电压。 数据线被充电以在第二时段期间达到第一数据信号的目标值。 数据线在第三周期期间预充电具有第二预充电电压。 在第四周期期间，数据线被充电以达到第二数据信号的目标值。 液晶显示装置能够降低驱动数据线的驱动器的发热值。

公开(公告)号：US20060182716A1

公开(公告)日：2006-08-17

申请号：US11330917

申请日：2006-01-11

申请人： Jin Hong ,  Scott Seiwert ,  Lawrence Blatt

发明人： Jin Hong ,  Scott Seiwert ,  Lawrence Blatt

IPC分类号： A61K38/21

CPC分类号： A61K38/212

摘要： The present invention provides synthetic Type I interferon receptor polypeptide agonists comprising consensus or hybrid Type I interferon receptor polypeptide agonists, containing one or more native or non-native glycosylation sites. The present invention further provides oral formulations of protease-resistant or protease-resistant, hyperglycosylated polypeptide variants, which polypeptide variants lack at least one protease cleavage site found in a parent polypeptide, and thus exhibit increased protease resistance compared to the parent polypeptide, which polypeptide variants further include (1) a carbohydrate moiety covalently linked to at least one non-native glycosylation site not found in the parent protein therapeutic or (2) a carbohydrate moiety covalently linked to at least one native glycosylation site found but not glycosylated in the parent protein therapeutic. The present invention further provides compositions, including oral pharmaceutical compositions, comprising the synthetic Type I interferon receptor polypeptide agonist, the hyperglycosylated polypeptide variant, the protease-resistant polypeptide variant, or the hyperglycosylated, protease-resistant polypeptide variant. The present invention further provides containers, devices, and kits comprising the synthetic Type I interferon receptor polypeptide agonist, the hyperglycosylated polypeptide variant, the protease-resistant polypeptide variant, or the hyperglycosylated, protease-resistant polypeptide variant. The present invention further provides therapeutic methods involving administering an effective amount of an oral pharmaceutical composition comprising a synthetic Type I interferon receptor polypeptide agonist, a hyperglycosylated polypeptide variant, a protease-resistant polypeptide variant, or a hyperglycosylated, protease-resistant polypeptide variant to an individual in need thereof.

公开(公告)号：US20240184039A1

公开(公告)日：2024-06-06

申请号：US18111532

申请日：2023-02-18

申请人： Jin Hong ,  Junqiao Wu ,  Danqing Wang

发明人： Jin Hong ,  Junqiao Wu ,  Danqing Wang

IPC分类号： G02B6/12 ,  G02F1/225

CPC分类号： G02B6/12004 ,  G02B6/12021 ,  G02F1/2257 ,  G02B2006/12061 ,  G02B2006/12097 ,  G02B2006/12142

摘要： Embodiments described herein may be related to optical devices and apparatuses directed to forming waveguides and optical phase modulators that enable high baud rate modulation. In one embodiment, an optical phase modulator includes: photonic optical waveguides having their cladding regions and electrical contacts formed by material with its absolute permittivity near zero (ENZ), and their waveguide core region formed by electro-optical (EO) material or silicon PN junction whose optical refractive index changes with strength of externally applied electrical field. The ENZ material described herein further possesses properties of both optical transparency at operating wavelength and electrical conductivity. The ENZ claddings and electrodes may further have dimensions to enable high externally applied electrical field within waveguide core. The EO material described herein includes but not limited to organic polymers, LiNbO3, liquid crystals. Other embodiments are described and claimed.