公开(公告)号：US20220081615A1

公开(公告)日：2022-03-17

申请号：US17194929

申请日：2021-03-08

Applicant: Kioxia Corporation

Inventor： Akira ENDO ,  Yasushi NAKASAKI ,  Masayasu MIYATA

IPC: C09K13/06 ,  H01L21/311 ,  H01L27/11582

Abstract: An etching composition for silicon nitride includes: a phosphoric acid solution; and an additive containing a silane compound having a composition represented by General formula: Si(R1)(R2)(R3)(R4) wherein R1, R2, R3, and R4 are monovalent groups, at least one of R1, R2, R3, or R4 is an alkoxy group, and at least another one of R1, R2, R3, or R4 is a functional group containing two or more oxygen.

公开(公告)号：US20230086074A1

公开(公告)日：2023-03-23

申请号：US17694098

申请日：2022-03-14

Applicant: Kioxia Corporation

Inventor： Yusuke NAKAJIMA ,  Akira TAKASHIMA ,  Tsunehiro INO ,  Yasushi NAKASAKI ,  Koji USUDA ,  Masaki NOGUCHI

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157

Abstract: A semiconductor device of an embodiment includes a semiconductor layer, a gate electrode layer, and a first insulating layer provided between the semiconductor layer and the gate electrode layer, the first insulating layer including aluminum oxide including at least one crystal phase selected from the group consisting of alpha (α)-aluminum oxide and theta (θ)-aluminum oxide, the first insulating layer having a thickness of equal to or less than 2.5 nm in a first direction from the semiconductor layer toward the gate electrode layer.

公开(公告)号：US20220093634A1

公开(公告)日：2022-03-24

申请号：US17189218

申请日：2021-03-01

Applicant: KIOXIA CORPORATION

Inventor： Akira TAKASHIMA ,  Tsunehiro INO ,  Yasushi NAKASAKI ,  Yoshihiko MORIYAMA

IPC: H01L27/11582 ,  H01L29/51

Abstract: According to one embodiment, a semiconductor memory device includes a stacked structure including conductive layers arranged in a first direction, and a columnar structure extending in the first direction in the first stacked structure. The columnar structure includes a semiconductor layer extending in the first direction, a charge storage layer between the semiconductor layer and the stacked structure, a first insulating layer between the semiconductor layer and the charge storage layer, and a second insulating layer between the stacked structure and the charge storage layer. The charge storage layer is aluminum nitride with a wurtzite crystal structure in which the c-axis is oriented in a direction towards the first insulating layer from the second insulating layer.

公开(公告)号：US20240258401A1

公开(公告)日：2024-08-01

申请号：US18420264

申请日：2024-01-23

Applicant: Kioxia Corporation

Inventor： Yusuke NAKAJIMA ,  Akira TAKASHIMA ,  Tsunehiro INO ,  Yasushi NAKASAKI

IPC: H01L29/51 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

CPC classification number: H01L29/513 ,  H01L29/517 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

Abstract: A semiconductor device of embodiments includes: a semiconductor layer; a gate electrode layer including a first conductive layer containing a first material and a second conductive layer between the first conductive layer and the semiconductor layer and containing a second material different from the first material; and a first insulating layer between the semiconductor layer and the gate electrode layer and containing aluminum oxide, the aluminum oxide including α (alpha)-aluminum oxide or θ (theta)-aluminum oxide. The direction of the crystal axis of the aluminum oxide falls within a range of ±10° with respect to a first direction from the semiconductor layer toward the gate electrode layer. The direction of the crystal axis of the first material falls within a range of ±10° with respect to the first direction. The direction of the crystal axis of the second material falls within a range of ±10° with respect to the first direction.

公开(公告)号：US20220302160A1

公开(公告)日：2022-09-22

申请号：US17410711

申请日：2021-08-24

Applicant: KIOXIA CORPORATION

Inventor： Hiroyuki YAMASHITA ,  Keiichi SAWA ,  Yasushi NAKASAKI ,  Takamitsu ISHIHARA ,  Junichi KANEYAMA

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565

Abstract: According to one embodiment, a semiconductor storage device includes a plurality of electrode films on a substrate alternating with plurality of gaps or insulating layers. A charge storage film is provided on a side surface of each of the plurality of electrode films with a first insulating film placed therebetween. A semiconductor film is provided on a side surface of the charge storage film with a second insulating film placed therebetween. Furthermore, a concentration of a first element in the charge storage film adjacent to each gap or insulating film is higher than a concentration of the first element in the charge storage film adjacent to each electrode film. The first element is one of boron, niobium, or molybdenum.

公开(公告)号：US20220013579A1

公开(公告)日：2022-01-13

申请号：US17482865

申请日：2021-09-23

Applicant: Kioxia Corporation

Inventor： Tadaomi DAIBOU ,  Yasushi NAKASAKI ,  Tadashi KAI ,  Hiroki KAWAI ,  Takamitsu ISHIHARA ,  Junichi ITO

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/08

Abstract: According to one embodiment, a magnetic memory device including a stacked structure including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and containing magnesium (Mg) and oxygen (O). The nonmagnetic layer further contains a first additive element and a second additive element, the first additive element is at least one element selected from sulfur (S), gallium (Ga), aluminum (Al), titanium (Ti), vanadium (V), hydrogen (H), fluorine (F), manganese (Mg), lithium (Li), nitrogen (N) and magnesium (Mg), and the second additive element is lithium (Li).