公开(公告)号：US20230309301A1

公开(公告)日：2023-09-28

申请号：US17844585

申请日：2022-06-20

Applicant: Kioxia Corporation

Inventor： Yuta KAMIYA ,  Kenichiro TORATANI ,  Kazuhiro MATSUO ,  Shoji HONDA ,  Takuya HIROHASHI ,  Borong CHEN ,  Kota TAKAHASHI

IPC: H01L27/11582

CPC classification number: H01L27/11582

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a first film including oxygen. The method further includes forming a second film including nitrogen. The method further includes etching surfaces of the first film and the second film using a substance including a halogen. The method further includes forming a third film including nitrogen on the surfaces of the first film and the second film. The third film is formed by alternately performing first processes and second processes, wherein each of the first processes forms a portion of the third film, and each of the second processes etches a portion of the third film using a substance including a halogen.

公开(公告)号：US20220310640A1

公开(公告)日：2022-09-29

申请号：US17460967

申请日：2021-08-30

Applicant: Kioxia Corporation

Inventor： Natsuki FUKUDA ,  Ryota NARASAKI ,  Takashi KURUSU ,  Yuta KAMIYA ,  Kazuhiro MATSUO ,  Shinji MORI ,  Shoji HONDA ,  Takafumi OCHIAI ,  Hiroyuki YAMASHITA ,  Junichi KANEYAMA ,  Ha HOANG ,  Yuta SAITO ,  Kota TAKAHASHI ,  Tomoki ISHIMARU ,  Kenichiro TORATANI

IPC: H01L27/11556 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/11582

Abstract: A semiconductor storage device includes a first conductive layer that extends in a first direction; a second conductive layer that extends in the first direction and is arranged with the first conductive layer in a second direction; a first insulating layer that is provided between the first conductive layer and the second conductive layer; a semiconductor layer that extends in the second direction and faces the first conductive layer, the second conductive layer, and the first insulating layer in a third direction; a first charge storage layer that is provided between the first conductive layer and the semiconductor layer; a second charge storage layer that is provided between the second conductive layer and the semiconductor layer; a first high dielectric constant layer that is provided between the first conductive layer and the first charge storage layer; and a second high dielectric constant layer provided between the second conductive layer and the second charge storage layer. At least a portion of the first charge storage layer faces the second charge storage layer without the second high dielectric constant layer being interposed between the portion of the first charge storage layer and the second charge storage layer in the second direction.

公开(公告)号：US20240284677A1

公开(公告)日：2024-08-22

申请号：US18443531

申请日：2024-02-16

Applicant: Kioxia Corporation

Inventor： Chihiro UMEDA ,  Yuta KAMIYA ,  Tomohisa IINO ,  Masaki NOGUCHI ,  Akira TAKASHIMA ,  Yusuke NAKAJIMA

IPC: H10B43/30 ,  H10B43/27

CPC classification number: H10B43/30 ,  H10B43/27

Abstract: A semiconductor device includes electrode layers and first insulating films alternately stacked on top of one another; a second insulating film extending along an upper surface, a lower surface, and a side surface of one of electrode layers; a charge storage layer extending along a side surface of the second insulating film with a third insulating film interposed therebetween; and a semiconductor layer extending along a side surface of the charge storage layer with a fourth insulating film interposed therebetween. A hydrogen concentration in the fourth insulating film is equal to or higher than a hydrogen concentration in the charge storage layer, which is equal to or higher than a hydrogen concentration in the third insulating film, which is equal to or higher than a hydrogen concentration in the second insulating film.

公开(公告)号：US20230200050A1

公开(公告)日：2023-06-22

申请号：US17841129

申请日：2022-06-15

Applicant: Kioxia Corporation

Inventor： Akifumi GAWASE ,  Ha HOANG ,  Atsuko SAKATA ,  Yuta KAMIYA ,  Kazuhiro MATSUO ,  Keiichi SAWA ,  Kota TAKAHASHI ,  Kenichiro TORATANI ,  Yimin LIU

IPC: H01L27/108 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/10805 ,  H01L29/78642 ,  H01L29/7869 ,  H01L29/66969 ,  H01L27/10873

Abstract: A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer between the first electrode and the second electrode; a gate electrode surrounding the oxide semiconductor layer; a gate insulating layer between the gate electrode and the oxide semiconductor layer; a first insulating layer provided between the first electrode and the gate electrode; and a second insulating layer provided between the second electrode and the gate electrode. In a cross section parallel to a first direction from the first electrode to the second electrode, a first portion of the oxide semiconductor layer is provided between the gate insulating layer and the first electrode. In the cross section, a second portion of the oxide semiconductor layer is provided between the gate insulating layer and the second electrode.

公开(公告)号：US20220189989A1

公开(公告)日：2022-06-16

申请号：US17410895

申请日：2021-08-24

Applicant: KIOXIA CORPORATION

Inventor： Masaya TODA ,  Kota TAKAHASHI ,  Kazuhiro MATSUO ,  Yuta KAMIYA ,  Shinji MORI ,  Kenichiro TORATANI

IPC: H01L27/11582 ,  H01L27/1157 ,  H01L21/28

Abstract: A semiconductor device includes a stacked film of electrode layers and insulating layers. A charge storage layer is in a hole in the stacked film on a first insulating film. A channel layer is on the charge storage layer via a second insulating film. An adsorption promoting layer is on surfaces of a third insulating layer covering the insulating layers and the first insulating film facing the electrode layers. The third insulating film includes a first metal element and a first element, and the adsorption promoting layer includes a second element and a third element. The difference in electronegativity between the second element and the third element is larger than a difference in electronegativity between the first metal element and the first element.

公开(公告)号：US20210358925A1

公开(公告)日：2021-11-18

申请号：US17194629

申请日：2021-03-08

Applicant: Kioxia Corporation

Inventor： Kota TAKAHASHI ,  Kazuhiro MATSUO ,  Shinji MORI ,  Yuta KAMIYA ,  Kenichiro TORATANI

IPC: H01L27/1159 ,  H01L27/11587 ,  H01L27/11597

Abstract: A memory device of an embodiment includes a stacked body including a plurality of insulating layers and a plurality of gate electrode layers alternately stacked in a first direction, a semiconductor layer provided in the stacked body and extending in the first direction, and a gate insulating layer provided between the semiconductor layer and the gate electrode layer, the gate insulating layer including a first region including a first oxide containing at least one of hafnium oxide or zirconium oxide, the first region including an orthorhombic crystal, and the first region including at least one first element selected from the group consisting of carbon (C), nitrogen (N), chlorine (Cl), boron (B), hydrogen (H), fluorine (F), helium (He), and argon (Ar).

公开(公告)号：US20240074172A1

公开(公告)日：2024-02-29

申请号：US18181821

申请日：2023-03-10

Applicant: Kioxia Corporation

Inventor： Keiichi SAWA ,  Tomoyuki TAKEMOTO ,  Yuta KAMIYA ,  Hiroyuki YAMASHITA ,  Yuta SAITO ,  Tatsunori ISOGAI

IPC: H10B41/27 ,  H10B43/27

CPC classification number: H10B41/27 ,  H10B43/27

Abstract: In one embodiment, a semiconductor storage device includes a lower electrode layer, a lower insulator, an upper electrode layer and an upper insulator along a first direction. The device further includes a first insulator provided on a side of a second direction of the upper electrode layer, and a second insulator provided between the upper electrode layer and the lower/upper/first insulator. The device further includes a charge storage layer, a third insulator and a semiconductor layer sequentially provided on a side of the second direction of the first insulator. A side face of the first insulator on a side of the upper electrode layer has a convex shape, the charge storage layer includes a first portion having a first thickness, and a second portion having a second thickness less than the first thickness, and the first portion is in contact with the first insulator.

公开(公告)号：US20230088864A1

公开(公告)日：2023-03-23

申请号：US17687379

申请日：2022-03-04

Applicant: Kioxia Corporation

Inventor： Yuta KAMIYA ,  Kazuhiro MATSUO ,  Kota TAKAHASHI ,  Masaya TODA ,  Tomoki ISHIMARU

IPC: H01L27/108 ,  H01L49/02 ,  H01L29/786 ,  H01L29/66

Abstract: A semiconductor memory device according to an embodiment includes: a first oxide semiconductor layer between a first conductive layer and a second conductive layer; a first gate electrode; a first electrode; a second electrode; a first capacitor insulating film between the first electrode and the second electrode including a first region and a second region between the first region and the second electrode, concentration of the Ti is higher in the second region than the first region; a third conductive layer; a second oxide semiconductor layer between the third conductive layer and a fourth conductive layer; a second gate electrode; a third electrode; a fourth electrode; and a second capacitor insulating film between the third electrode and the fourth electrode, and including a third region and a fourth region between the third region and the fourth electrode, concentration of Ti is higher in the fourth region than the third region.

公开(公告)号：US20220302169A1

公开(公告)日：2022-09-22

申请号：US17411733

申请日：2021-08-25

Applicant: KIOXIA CORPORATION

Inventor： Keisuke TAKAGI ,  Kazuhiro MATSUO ,  Kunifumi SUZUKI ,  Yuuichi KAMIMUTA ,  Taro SHIOKAWA ,  Masumi SAITOH ,  Yuta KAMIYA ,  Kota TAKAHASHI

IPC: H01L27/11597 ,  G11C16/04 ,  H01L27/1157 ,  H01L27/11582

Abstract: A semiconductor storage device includes a channel layer extending along a first direction and including titanium oxide, an electrode layer extending along a second direction crossing the first direction, and a ferroelectric layer between the channel layer and the electrode layer and including titanium.