摘要:
Disclosed is a semiconductor-encapsulating epoxy resin composition comprising (A) an epoxy resin. (B) a curing agent, and (C) fused silica which has been surface-treated with a silane coupling agent having a secondary amino group. This composition has a good moldability and reliability, and a good solder dipping stability.
摘要:
Disclosed is a semiconductor device-encapsulating epoxy resin composition comprising (i) an epoxy resin (A) containing at least one of a bifunctional epoxy resin (a1) having a biphenyl skeleton and a bifunctional epoxy resin (a2) having a naphthalene skeleton, (ii) a curing agent (B), and (iii) a filler containing fused silica (C) having a specified kind and specified mean particle diameter. This composition has an excellent heat resistance of solder, and further reliability after thermal cycles and reliability after solder-bath dipping.
摘要:
Disclosed herein is an epoxy resin compound including an epoxy resin (A), a hardener (B), and an inorganic filler, characterized in that said inorganic filler contains silica (C) as an essential component, said hardener (B) is one which contains at least two phenolic hydroxyl groups and/or naphtholic hydroxyl groups in the molecule, and said silica (C) contains 1-99 wt % of synthetic silica and 99-1 wt % of natural fused silica. Disclosed also herein is a semiconductor device having a semiconductor element sealed therein with said epoxy resin compound. The epoxy resin compound does not cause such troubles as short shot, resin peeling, wire breakage, stage shift, and vent clogging at the time of molding. In addition, when used as a sealing material, it yields semiconductor devices which have good reliability at high temperature and high humidity and good resistance to soldering heat.
摘要:
Disclosed herein is an epoxy resin compound including an epoxy resin (A), a hardener (B), and an inorganic filler, characterized in that said inorganic filler contains silica (C) as an essential component, said hardener (B) is one which contains at least two phenolic hydroxyl groups and/or naphtholic hydroxyl groups in the molecule, and said silica (C) contains 1-99 wt % of synthetic silica and 99-1 wt % of natural fused silica. Disclosed also herein is a semiconductor device having a semiconductor element sealed therein with said epoxy resin compound. The epoxy resin compound does not cause such troubles as short shot, resin peeling, wire breakage, stage shift, and vent clogging at the time of molding. In addition, when used as a sealing material, it yields semiconductor devices which have good reliability at high temperature and high humidity and good resistance to soldering heat.
摘要:
An epoxy resin composition composed of an epoxy resin (A), a hardener (B), and an inorganic filler (C), characterized in that the content of the inorganic filler (C) is 70-97 wt % and the inorganic filler (C) contains 0.1-50 wt % of alumina. When used to seal semiconductor devices, it exhibits good moldability and imparts to the sealed semiconductors good flame retardance, solder heat resistance, and reliability at high temperatures.
摘要:
A semiconductor-encapsulating composition comprised of (i) an epoxy resin preferably containing a bifunctional biphenyl-skeletal epoxy resin and/or a bifunctional naphthalene-skeletal epoxy resin, (ii) a curing agent containing 4,4'-dihydroxybiphenyl, and (iii) 70 to 95% by weight, based on the total epoxy resin composition, of a filler.
摘要:
A semiconductor device includes an interelectrode insulating film formed between a charge storage layer and a control electrode layer. The interelectrode insulating film is formed in a first region above an upper surface of an element isolation insulating film, a second region along a sidewall of the charge storage layer, and a third region above an upper surface of the charge storage layer. The interelectrode insulating film includes a first stack including a first silicon nitride film or a high dielectric constant film interposed between a first and a second silicon oxide film or a second stack including a second high dielectric constant film and a third silicon oxide film, and a second silicon nitride film formed between the control electrode layer and the first or the second stack. The second silicon nitride film is relatively thinner in the third region than in the first region.
摘要:
According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor region, a tunnel insulator provided above the semiconductor region, a charge storage insulator provided above the tunnel insulator, a block insulator provided above the charge storage insulator, a control gate electrode provided above the block insulator, and an interface region including a metal element, the interface region being provided at one interface selected from between the semiconductor region and the tunnel insulator, the tunnel insulator and the charge storage insulator, the charge storage insulator and the block insulator, and the block insulator and the control gate electrode.
摘要:
According to one embodiment, a method for manufacturing a semiconductor device includes: forming an underlayer film that contains atoms selected from the group consisting of aluminum, boron and alkaline earth metal; and forming a silicon oxide film on the underlayer film by a CVD method or an ALD method by use of a silicon source containing at least one of an ethoxy group, a halogen group, an alkyl group and an amino group, or a silicon source of a siloxane system.
摘要:
[Problem]An object of the present invention is to provide an image processing apparatus used for acquisition assistance of optimal low-resolution image set for super-resolution processing.[Means for solving the problem]The image processing apparatus of the present invention comprises a processing unit for computing displacement amounts between a basis image and each reference image, a processing unit for generating a plurality of deformed images based on the displacement amounts, the basis image and a plurality of reference images, a processing unit for setting a threshold of a parameter used at the time of image information selection, a processing unit for selecting image information used in the super-resolution processing from the reference image by using the threshold of the parameter, a processing unit for generating composed images and weighted images based on the basis image, the displacement amounts and the image information, a processing unit for generating high-resolution grid images by dividing the composed image by the weighted image, a processing unit for generating simplified interpolation images based on high-resolution grid images, a processing unit for generating assistance images, a display unit for displaying the assistance images, and a control unit that respectively controls a processing concerning the image input, a processing concerning the basis image selection, a processing concerning the reference image selection and a processing concerning the threshold setting of the parameter as necessary.