摘要:
An epoxy resin composition composed of an epoxy resin (A), a hardener (B), and an inorganic filler (C), characterized in that the content of the inorganic filler (C) is 70-97 wt % and the inorganic filler (C) contains 0.1-50 wt % of alumina. When used to seal semiconductor devices, it exhibits good moldability and imparts to the sealed semiconductors good flame retardance, solder heat resistance, and reliability at high temperatures.
摘要:
Disclosed herein is an epoxy resin compound including an epoxy resin (A), a hardener (B), and an inorganic filler, characterized in that said inorganic filler contains silica (C) as an essential component, said hardener (B) is one which contains at least two phenolic hydroxyl groups and/or naphtholic hydroxyl groups in the molecule, and said silica (C) contains 1-99 wt % of synthetic silica and 99-1 wt % of natural fused silica. Disclosed also herein is a semiconductor device having a semiconductor element sealed therein with said epoxy resin compound. The epoxy resin compound does not cause such troubles as short shot, resin peeling, wire breakage, stage shift, and vent clogging at the time of molding. In addition, when used as a sealing material, it yields semiconductor devices which have good reliability at high temperature and high humidity and good resistance to soldering heat.
摘要:
Disclosed herein is an epoxy resin compound including an epoxy resin (A), a hardener (B), and an inorganic filler, characterized in that said inorganic filler contains silica (C) as an essential component, said hardener (B) is one which contains at least two phenolic hydroxyl groups and/or naphtholic hydroxyl groups in the molecule, and said silica (C) contains 1-99 wt % of synthetic silica and 99-1 wt % of natural fused silica. Disclosed also herein is a semiconductor device having a semiconductor element sealed therein with said epoxy resin compound. The epoxy resin compound does not cause such troubles as short shot, resin peeling, wire breakage, stage shift, and vent clogging at the time of molding. In addition, when used as a sealing material, it yields semiconductor devices which have good reliability at high temperature and high humidity and good resistance to soldering heat.
摘要:
Disclosed is a semiconductor-encapsulating epoxy resin composition comprising (A) an epoxy resin. (B) a curing agent, and (C) fused silica which has been surface-treated with a silane coupling agent having a secondary amino group. This composition has a good moldability and reliability, and a good solder dipping stability.
摘要:
Disclosed is a semiconductor device-encapsulating epoxy resin composition comprising (i) an epoxy resin (A) containing at least one of a bifunctional epoxy resin (a1) having a biphenyl skeleton and a bifunctional epoxy resin (a2) having a naphthalene skeleton, (ii) a curing agent (B), and (iii) a filler containing fused silica (C) having a specified kind and specified mean particle diameter. This composition has an excellent heat resistance of solder, and further reliability after thermal cycles and reliability after solder-bath dipping.
摘要:
A semiconductor-encapsulating composition comprised of (i) an epoxy resin preferably containing a bifunctional biphenyl-skeletal epoxy resin and/or a bifunctional naphthalene-skeletal epoxy resin, (ii) a curing agent containing 4,4'-dihydroxybiphenyl, and (iii) 70 to 95% by weight, based on the total epoxy resin composition, of a filler.
摘要:
Disclosed is an epoxy resin composition suitable for sealing a semiconductor, comprising an epoxy resin (A), a hardener (B), an inorganic filler (C), and a phosphoric acid ester compound (D), an amount of the inorganic filler (C) contained being more than 80% by weight relative to the composition. A semiconductor sealing epoxy resin composition excellent in flame retardancy, formability, reliability and solder heat resistance is obtained without an essential need to use a halogen-based flame retardant or an antimony-based flame retardant.
摘要:
A semiconductor device includes an interelectrode insulating film formed between a charge storage layer and a control electrode layer. The interelectrode insulating film is formed in a first region above an upper surface of an element isolation insulating film, a second region along a sidewall of the charge storage layer, and a third region above an upper surface of the charge storage layer. The interelectrode insulating film includes a first stack including a first silicon nitride film or a high dielectric constant film interposed between a first and a second silicon oxide film or a second stack including a second high dielectric constant film and a third silicon oxide film, and a second silicon nitride film formed between the control electrode layer and the first or the second stack. The second silicon nitride film is relatively thinner in the third region than in the first region.
摘要:
According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor region, a tunnel insulator provided above the semiconductor region, a charge storage insulator provided above the tunnel insulator, a block insulator provided above the charge storage insulator, a control gate electrode provided above the block insulator, and an interface region including a metal element, the interface region being provided at one interface selected from between the semiconductor region and the tunnel insulator, the tunnel insulator and the charge storage insulator, the charge storage insulator and the block insulator, and the block insulator and the control gate electrode.
摘要:
According to one embodiment, a method for manufacturing a semiconductor device includes: forming an underlayer film that contains atoms selected from the group consisting of aluminum, boron and alkaline earth metal; and forming a silicon oxide film on the underlayer film by a CVD method or an ALD method by use of a silicon source containing at least one of an ethoxy group, a halogen group, an alkyl group and an amino group, or a silicon source of a siloxane system.