公开(公告)号：US5476884A

公开(公告)日：1995-12-19

申请号：US312672

申请日：1994-09-28

申请人： Keiji Kayaba ,  Yasushi Sawamura ,  Masayuki Tanaka

发明人： Keiji Kayaba ,  Yasushi Sawamura ,  Masayuki Tanaka

IPC分类号： H01L23/29 ,  C08L63/00 ,  C08K7/08

CPC分类号： H01L23/293 ,  H01L23/295 ,  H01L2924/0002

摘要： Disclosed is a semiconductor-encapsulating epoxy resin composition comprising (A) an epoxy resin. (B) a curing agent, and (C) fused silica which has been surface-treated with a silane coupling agent having a secondary amino group. This composition has a good moldability and reliability, and a good solder dipping stability.

摘要翻译： 公开了包含（A）环氧树脂的半导体封装环氧树脂组合物。 （B）固化剂，（C）已经用具有仲氨基的硅烷偶联剂表面处理的熔融二氧化硅。 该组合物具有良好的成型性和可靠性，以及良好的焊料浸渍稳定性。

公开(公告)号：US5360837A

公开(公告)日：1994-11-01

申请号：US990000

申请日：1992-12-11

申请人： Shiro Honda ,  Yasushi Sawamura ,  Masayuki Tanaka ,  Keiji Kayaba ,  Toshihiro Teshiba

发明人： Shiro Honda ,  Yasushi Sawamura ,  Masayuki Tanaka ,  Keiji Kayaba ,  Toshihiro Teshiba

IPC分类号： C08G59/22 ,  C08G59/24 ,  C08K7/18 ,  H01L23/29 ,  C08K7/08

CPC分类号： H01L23/293 ,  C08G59/226 ,  C08G59/245 ,  C08K7/18 ,  H01L2924/0002

摘要： Disclosed is a semiconductor device-encapsulating epoxy resin composition comprising (i) an epoxy resin (A) containing at least one of a bifunctional epoxy resin (a1) having a biphenyl skeleton and a bifunctional epoxy resin (a2) having a naphthalene skeleton, (ii) a curing agent (B), and (iii) a filler containing fused silica (C) having a specified kind and specified mean particle diameter. This composition has an excellent heat resistance of solder, and further reliability after thermal cycles and reliability after solder-bath dipping.

摘要翻译： 公开了一种半导体器件封装环氧树脂组合物，其包含（i）含有具有联苯骨架的双官能环氧树脂（a1）和具有萘骨架的双官能环氧树脂（a2）中的至少一种的环氧树脂（A）（ ii）固化剂（B），和（iii）含有特定种类和特定平均粒径的熔融二氧化硅（C）的填料。 该组合物具有优异的焊料耐热性，并且在热循环之后的进一步的可靠性以及焊锡浴浸渍后的可靠性。

公开(公告)号：US5985455A

公开(公告)日：1999-11-16

申请号：US95632

申请日：1998-06-11

申请人： Atsuto Tokunaga ,  Yasushi Sawamura ,  Masayuki Tanaka

发明人： Atsuto Tokunaga ,  Yasushi Sawamura ,  Masayuki Tanaka

IPC分类号： C08G59/24 ,  C08G59/62 ,  C08K3/36 ,  C08L63/00 ,  H01L23/29 ,  B32B27/38 ,  H01L21/203

CPC分类号： C08G59/245 ,  C08G59/621 ,  C08K3/36 ,  C08L63/00 ,  H01L23/293 ,  H01L23/295 ,  H01L2924/0002 ,  Y10S524/919 ,  Y10T428/31511 ,  Y10T428/31529

摘要： Disclosed herein is an epoxy resin compound including an epoxy resin (A), a hardener (B), and an inorganic filler, characterized in that said inorganic filler contains silica (C) as an essential component, said hardener (B) is one which contains at least two phenolic hydroxyl groups and/or naphtholic hydroxyl groups in the molecule, and said silica (C) contains 1-99 wt % of synthetic silica and 99-1 wt % of natural fused silica. Disclosed also herein is a semiconductor device having a semiconductor element sealed therein with said epoxy resin compound. The epoxy resin compound does not cause such troubles as short shot, resin peeling, wire breakage, stage shift, and vent clogging at the time of molding. In addition, when used as a sealing material, it yields semiconductor devices which have good reliability at high temperature and high humidity and good resistance to soldering heat.

摘要翻译： 本文公开了包含环氧树脂（A），固化剂（B）和无机填料的环氧树脂化合物，其特征在于，所述无机填料含有二氧化硅（C）作为必要成分，所述固化剂（B）是 在分子中含有至少两个酚羟基和/或萘酚羟基，所述二氧化硅（C）含有1-99重量％的合成二氧化硅和99-1重量％的天然熔融二氧化硅。 此处还公开了一种其中密封有所述环氧树脂化合物的半导体元件的半导体器件。 环氧树脂化合物在成型时不会引起诸如短丸，树脂剥离，断线，阶段偏移和排气堵塞等问题。 此外，当用作密封材料时，它产生在高温和高湿度下具有良好的可靠性以及良好的耐焊接热的半导体器件。

公开(公告)号：US5798400A

公开(公告)日：1998-08-25

申请号：US696916

申请日：1996-08-22

申请人： Atsuto Tokunaga ,  Yasushi Sawamura ,  Masayuki Tanaka

发明人： Atsuto Tokunaga ,  Yasushi Sawamura ,  Masayuki Tanaka

IPC分类号： C08G59/24 ,  C08G59/62 ,  C08K3/36 ,  C08L63/00 ,  H01L23/29

CPC分类号： C08G59/245 ,  C08G59/621 ,  C08K3/36 ,  C08L63/00 ,  H01L23/293 ,  H01L23/295 ,  H01L2924/0002 ,  Y10S524/919 ,  Y10T428/31511 ,  Y10T428/31529

摘要： Disclosed herein is an epoxy resin compound including an epoxy resin (A), a hardener (B), and an inorganic filler, characterized in that said inorganic filler contains silica (C) as an essential component, said hardener (B) is one which contains at least two phenolic hydroxyl groups and/or naphtholic hydroxyl groups in the molecule, and said silica (C) contains 1-99 wt % of synthetic silica and 99-1 wt % of natural fused silica. Disclosed also herein is a semiconductor device having a semiconductor element sealed therein with said epoxy resin compound. The epoxy resin compound does not cause such troubles as short shot, resin peeling, wire breakage, stage shift, and vent clogging at the time of molding. In addition, when used as a sealing material, it yields semiconductor devices which have good reliability at high temperature and high humidity and good resistance to soldering heat.

摘要翻译： PCT No.PCT / JP95 / 02742 Sec。 371日期：1996年8月22日 102（e）日期1996年8月22日PCT 1995年12月27日PCT PCT。 第WO96 / 20969号公报 日期1996年7月11日公开的是包含环氧树脂（A），固化剂（B）和无机填料的环氧树脂化合物，其特征在于，所述无机填料含有二氧化硅（C）作为必要成分，所述固化剂（ B）是分子中含有至少两个酚羟基和/或萘酚羟基的化合物，所述二氧化硅（C）含有1-99重量％的合成二氧化硅和99-1重量％的天然熔融二氧化硅。 此处还公开了一种其中密封有所述环氧树脂化合物的半导体元件的半导体器件。 环氧树脂化合物在成型时不会引起诸如短丸，树脂剥离，断线，阶段偏移和排气堵塞等问题。 此外，当用作密封材料时，它产生在高温和高湿度下具有良好的可靠性以及良好的耐焊接热的半导体器件。

公开(公告)号：US5854316A

公开(公告)日：1998-12-29

申请号：US793460

申请日：1997-02-26

申请人： Ken Shimizu ,  Yasushi Sawamura ,  Masayuki Tanaka

发明人： Ken Shimizu ,  Yasushi Sawamura ,  Masayuki Tanaka

IPC分类号： C08K3/22 ,  H01L23/29 ,  C08L63/00

CPC分类号： H01L23/295 ,  C08K3/22 ,  H01L23/293 ,  H01L2924/0002

摘要： An epoxy resin composition composed of an epoxy resin (A), a hardener (B), and an inorganic filler (C), characterized in that the content of the inorganic filler (C) is 70-97 wt % and the inorganic filler (C) contains 0.1-50 wt % of alumina. When used to seal semiconductor devices, it exhibits good moldability and imparts to the sealed semiconductors good flame retardance, solder heat resistance, and reliability at high temperatures.

摘要翻译： PCT No.PCT / JP96 / 01919 Sec。 371日期1996年2月26日 102（e）1996年2月26日PCT 1996年7月10日PCT公布。 公开号WO97 / 03129 日本1997年1月30日由环氧树脂（A），固化剂（B）和无机填料（C）组成的环氧树脂组合物，其特征在于，无机填料（C）的含量为70-97重量％ 无机填料（C）含有0.1-50重量％的氧化铝。 当用于密封半导体器件时，其表现出良好的成型性，并赋予密封半导体良好的阻燃性，焊料耐热性和高温下的可靠性。

公开(公告)号：US5567749A

公开(公告)日：1996-10-22

申请号：US328617

申请日：1994-10-25

申请人： Yasushi Sawamura ,  Toshihiro Teshiba ,  Masayuki Tanaka

发明人： Yasushi Sawamura ,  Toshihiro Teshiba ,  Masayuki Tanaka

IPC分类号： C08G59/24 ,  C08G59/62 ,  H01L23/29 ,  C08L63/00

CPC分类号： C08G59/621 ,  C08G59/245 ,  H01L23/293 ,  H01L2924/0002

摘要： A semiconductor-encapsulating composition comprised of (i) an epoxy resin preferably containing a bifunctional biphenyl-skeletal epoxy resin and/or a bifunctional naphthalene-skeletal epoxy resin, (ii) a curing agent containing 4,4'-dihydroxybiphenyl, and (iii) 70 to 95% by weight, based on the total epoxy resin composition, of a filler.

摘要翻译： 一种半导体封装组合物，其包含（i）优选含有双官能联苯骨架环氧树脂和/或双功能萘骨架环氧树脂的环氧树脂，（ii）含有4,4'-二羟基联苯的固化剂和（iii ）基于总环氧树脂组合物70至95重量％的填料。

公开(公告)号：US08791521B2

公开(公告)日：2014-07-29

申请号：US13423664

申请日：2012-03-19

申请人： Koji Nakahara ,  Kazuhiro Matsuo ,  Masayuki Tanaka ,  Hirofumi Iikawa

发明人： Koji Nakahara ,  Kazuhiro Matsuo ,  Masayuki Tanaka ,  Hirofumi Iikawa

IPC分类号： H01L29/788

CPC分类号： H01L27/11521 ,  H01L29/42324 ,  H01L29/7881

摘要： A semiconductor device includes an interelectrode insulating film formed between a charge storage layer and a control electrode layer. The interelectrode insulating film is formed in a first region above an upper surface of an element isolation insulating film, a second region along a sidewall of the charge storage layer, and a third region above an upper surface of the charge storage layer. The interelectrode insulating film includes a first stack including a first silicon nitride film or a high dielectric constant film interposed between a first and a second silicon oxide film or a second stack including a second high dielectric constant film and a third silicon oxide film, and a second silicon nitride film formed between the control electrode layer and the first or the second stack. The second silicon nitride film is relatively thinner in the third region than in the first region.

摘要翻译： 半导体器件包括在电荷存储层和控制电极层之间形成的电极间绝缘膜。 电极间绝缘膜形成在元件隔离绝缘膜的上表面上方的第一区域，沿着电荷存储层的侧壁的第二区域和电荷存储层的上表面上方的第三区域。 电极间绝缘膜包括：第一堆叠，其包括介于第一和第二氧化硅膜之间的第一氮化硅膜或高介电常数膜，或包括第二高介电常数膜和第三氧化硅膜的第二堆叠， 形成在控制电极层和第一或第二堆叠之间的第二氮化硅膜。 在第三区域中，第二氮化硅膜比第一区域相对薄。

公开(公告)号：US08525252B2

公开(公告)日：2013-09-03

申请号：US13233788

申请日：2011-09-15

申请人： Kenichiro Toratani ,  Masayuki Tanaka ,  Kazuhiro Matsuo

发明人： Kenichiro Toratani ,  Masayuki Tanaka ,  Kazuhiro Matsuo

IPC分类号： H01L29/792

CPC分类号： H01L29/792 ,  G11C16/0466 ,  H01L21/28282 ,  H01L27/11568 ,  H01L27/11582 ,  H01L29/4234 ,  H01L29/66833 ,  H01L29/7926

摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor region, a tunnel insulator provided above the semiconductor region, a charge storage insulator provided above the tunnel insulator, a block insulator provided above the charge storage insulator, a control gate electrode provided above the block insulator, and an interface region including a metal element, the interface region being provided at one interface selected from between the semiconductor region and the tunnel insulator, the tunnel insulator and the charge storage insulator, the charge storage insulator and the block insulator, and the block insulator and the control gate electrode.

公开(公告)号：US20130119531A1

公开(公告)日：2013-05-16

申请号：US13423818

申请日：2012-03-19

申请人： Masayuki Tanaka ,  Kenichiro Toratani

发明人： Masayuki Tanaka ,  Kenichiro Toratani

IPC分类号： H01L23/48 ,  H01L21/283

CPC分类号： H01L27/11578 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/11521 ,  H01L27/11568 ,  H01L27/11582 ,  H01L29/94

摘要： According to one embodiment, a method for manufacturing a semiconductor device includes: forming an underlayer film that contains atoms selected from the group consisting of aluminum, boron and alkaline earth metal; and forming a silicon oxide film on the underlayer film by a CVD method or an ALD method by use of a silicon source containing at least one of an ethoxy group, a halogen group, an alkyl group and an amino group, or a silicon source of a siloxane system.

摘要翻译： 根据一个实施例，制造半导体器件的方法包括：形成含有选自铝，硼和碱土金属的原子的底层膜; 或通过使用含有乙氧基，卤素基团，烷基和氨基中的至少一个的硅源或硅源的硅源，通过CVD法或ALD法在下层膜上形成氧化硅膜 硅氧烷体系。

公开(公告)号：US20130084027A1

公开(公告)日：2013-04-04

申请号：US13578542

申请日：2011-02-10

申请人： Shunichi Koga ,  Masayuki Tanaka ,  Masatoshi Okutomi

发明人： Shunichi Koga ,  Masayuki Tanaka ,  Masatoshi Okutomi

IPC分类号： G06K9/32

CPC分类号： G06K9/32 ,  G06T3/4053 ,  H04N1/3871 ,  H04N5/232

摘要： [Problem]An object of the present invention is to provide an image processing apparatus used for acquisition assistance of optimal low-resolution image set for super-resolution processing.[Means for solving the problem]The image processing apparatus of the present invention comprises a processing unit for computing displacement amounts between a basis image and each reference image, a processing unit for generating a plurality of deformed images based on the displacement amounts, the basis image and a plurality of reference images, a processing unit for setting a threshold of a parameter used at the time of image information selection, a processing unit for selecting image information used in the super-resolution processing from the reference image by using the threshold of the parameter, a processing unit for generating composed images and weighted images based on the basis image, the displacement amounts and the image information, a processing unit for generating high-resolution grid images by dividing the composed image by the weighted image, a processing unit for generating simplified interpolation images based on high-resolution grid images, a processing unit for generating assistance images, a display unit for displaying the assistance images, and a control unit that respectively controls a processing concerning the image input, a processing concerning the basis image selection, a processing concerning the reference image selection and a processing concerning the threshold setting of the parameter as necessary.

摘要翻译： 本发明的目的是提供一种用于超分辨率处理的最佳低分辨率图像集的获取辅助的图像处理装置。 解决问题的手段本发明的图像处理装置包括：处理单元，用于计算基础图像和每个参考图像之间的位移量;处理单元，用于基于位移量产生多个变形图像;基础 图像和多个参考图像，用于设置在图像信息选择时使用的参数的阈值的处理单元，用于从参考图像中选择用于超分辨率处理的图像信息的处理单元， 所述参数，用于基于所述基础图像生成合成图像和加权图像的处理单元，所述位移量和所述图像信息，用于通过将所述合成图像除以所述加权图像来生成高分辨率网格图像的处理单元，处理单元 用于生成基于高分辨率网格图像的简化插值图像的处理单元 生成辅助图像，用于显示辅助图像的显示单元和分别控制与图像输入有关的处理的控制单元，关于基础图像选择的处理，关于参考图像选择的处理以及关于阈值设置的处理 必要的参数。