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    Process for producing phosophorous-doped silicon monocrystals having a select peripheral dopant concentration along a radial cross-section of such monocrystal
    2.
    发明授权
    Process for producing phosophorous-doped silicon monocrystals having a select peripheral dopant concentration along a radial cross-section of such monocrystal 失效
    具有沿着这种单晶的径向横截面的选择的外围掺杂剂浓度的产生磷掺杂硅单晶的方法

    公开(公告)号：US4126509A

    公开(公告)日：1978-11-21

    申请号：US735583

    申请日：1976-10-26

    申请人： Wolfgang Keller ,  Herbert Kramer ,  Konrad Reuschel

    发明人： Wolfgang Keller ,  Herbert Kramer ,  Konrad Reuschel

    IPC分类号： C30B13/12 ,  C30B13/06 ,  C30B29/06 ,  H01L21/18 ,  B01J17/12 ,  B01J17/40

    CPC分类号： C30B13/06

    摘要： A process for producing phosphorous-doped silicon monocrystals having a select peripheral depletion or enrichment of dopant atoms along the radial direction of such monocrystals comprises providing a silicon monocrystalline rod homogeneously doped with phosphorous, as by neutron doping, and subjecting such homogeneously doped monocrystalline rod to a peripheral zone melt cycle in a select atmosphere such that the peripheral melt zone depth within the monocrystalline rod is controlled so as to be less than the radius of the rod in accordance with the desired peripheral dopant concentration in the ultimately attained rod.

    摘要翻译： 具有沿这种单晶的径向方向选择外围缺陷或富集掺杂剂原子的磷掺杂硅单晶的方法包括提供均匀掺杂磷的硅单晶棒，如通过中子掺杂，并将这种均匀掺杂的单晶棒 在选择气氛中的周边区域熔融循环，使得单晶棒内的外围熔融区深度被控制为小于根据最终获得的棒中期望的外围掺杂剂浓度的棒的半径。

    Method of producing hollow semiconductor bodies
    4.
    发明授权
    Method of producing hollow semiconductor bodies 失效
    中空半导体体的制造方法

    公开(公告)号：US3950479A

    公开(公告)日：1976-04-13

    申请号：US331501

    申请日：1973-02-12

    申请人： Konrad Reuschel ,  Arno Kersting ,  Wolfgang Keller

    发明人： Konrad Reuschel ,  Arno Kersting ,  Wolfgang Keller

    IPC分类号： C23C16/01 ,  B29D23/00 ,  B01J17/32 ,  B29C24/00 ,  B29D31/00

    CPC分类号： C23C16/01 ,  Y10S148/073 ,  Y10S148/122

    摘要： Described are two methods of producing a hollow body, comprised of semiconductor material, especially silicon, by precipitation from a gaseous compound of said semiconductor material upon the surface of a heated carrier body, which after a sufficiently thick layer of semiconductor material has been precipitated, is removed again without damaging said layer. One method is characterized by using a hollow carrier body, open at least at two opposite sides. In one embodiment, prior to the precipitation of the semiconductor material, one of the open sides of the carrier body is covered by a wafer from the same semiconductor material whose shape corresponds to the open side. Thereafter, the semiconductor material is precipitated from the gaseous compound until the desired layer thickness and a gas-tight connection is obtained between the layer and the covering semiconductor material. The second method precipitates a semiconductor layer and thereafter welds a cover on one or both open ends the tube.

    摘要翻译： 描述了通过从被加热的载体的表面上的所述半导体材料的气态化合物沉淀而形成半导体材料，特别是硅的中空体的两种方法，在已经沉积了足够厚的半导体材料之后， 再次被除去而不损坏所述层。 一种方法的特征在于使用中空载体，至少在两个相对侧开放。 在一个实施例中，在半导体材料沉淀之前，载体主体的开口侧之一由与形状对应于开口侧的相同的半导体材料被晶片覆盖。 此后，半导体材料从气态化合物中沉淀直到在层和覆盖半导体材料之间获得所需的层厚度和气密连接。 第二种方法沉淀半导体层，然后在一个或两个开放端焊接管。

    AGITATOR FOR ABRASIVE MEDIA
    9.
    发明申请
    AGITATOR FOR ABRASIVE MEDIA 有权
    磨料介质搅拌机

    公开(公告)号：US20100118643A1

    公开(公告)日：2010-05-13

    申请号：US12598698

    申请日：2008-04-30

    申请人： Wolfgang Keller

    发明人： Wolfgang Keller

    IPC分类号： B01F13/00

    CPC分类号： B01F3/1221 ,  B01F7/00041 ,  B01F7/00116 ,  B01F7/00133 ,  B01F7/00275 ,  B01F7/00316 ,  B01F7/00466

    摘要： Disclosed is a agitator (1; 1a-1h), particularly for abrasive media, comprising a support disk (2; 2a-2h) to which agitator blades (3; 3a-3h) are connected substantially perpendicular to the support disk (2; 2a-2h), said blades (3; 3a-3h) being arranged substantially in a radial direction. The support disk (2; 2a-2h) is also provided with a hub that receives an agitator shaft which is preferably motor-driven in a suitable manner. The trailing faces of the blades (3; 3a-3h) of the agitator (1; 1a-1h) and/or the area of the blade connections to the support disk (2; 2a-2h) is/are designed to largely prevent vortex shedding. For this purpose, preferred geometrical measures for the agitator blades (3; 3a-3h), the support disk (2; 2a-2h), and the connection of the blades (3; 3a-3h) to the support disk (2; 2a-2h) are disclosed and described.

    摘要翻译： 公开了一种搅拌器（1; 1a-1h），特别是用于研磨介质的搅拌器（1; 1a-1h），其包括支撑盘（2; 2a-2h），搅拌器叶片（3; 3a-3h）基本上垂直于支撑盘 2a-2h），所述叶片（3; 3a-3h）基本上沿径向布置。 支撑盘（2; 2a-2h）还设置有接收搅拌器轴的轮毂，搅拌轴优选以合适的方式由马达驱动。 搅拌器（1; 1a-1h）的叶片（3; 3a-3h）的后表面和/或连接到支撑盘（2; 2a-2h）的叶片的区域被设计成大大地防止 涡流脱落。 为此目的，用于搅拌器叶片（3; 3a-3h），支撑盘（2; 2a-2h）和叶片（3; 3a-3h）与支撑盘（2; 2a-2h）。