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公开(公告)号:US09947558B2
公开(公告)日:2018-04-17
申请号:US15235660
申请日:2016-08-12
Applicant: Lam Research Corporation
Inventor: Lin Xu , Hong Shih , Robin Koshy , John Daugherty , Satish Srinivasan
IPC: H01L21/31 , H01L21/67 , H01L21/3213 , H01L21/311 , H01L21/02
CPC classification number: H01L21/67069 , H01L21/02123 , H01L21/31116 , H01L21/31144 , H01L21/32137 , H01L21/67086 , H01L21/6831
Abstract: A method for conditioning and cleaning a silicon part is provided. The silicon part is heated to a temperature of at least 300° C. in the presence of oxygen to form an outer surface of the silicon part into silicon oxide. The silicon part is placed in a wet bath wherein the bath is a solution that selectively etches silicon oxide with respect to silicon.
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公开(公告)号:US12249490B2
公开(公告)日:2025-03-11
申请号:US17770147
申请日:2020-10-21
Applicant: LAM RESEARCH CORPORATION
Inventor: Lin Xu , Douglas Detert , John Daugherty , Pankaj Hazarika , Satish Srinivasan , Nash W. Anderson , John Michael Kerns , Robin Koshy , David Joseph Wetzel , Lei Liu , Eric A. Pape
IPC: H01J37/32
Abstract: A component of a plasma processing chamber having at least one plasma facing surface of the component comprises single crystal metal oxide material. The component can be machined from a single crystal metal oxide ingot. Suitable single crystal metal oxides include spinel, yttrium oxide, and yttrium aluminum garnet (YAG). A single crystal metal oxide can be machined to form a gas injector of a plasma processing chamber.
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公开(公告)号:US11087961B2
公开(公告)日:2021-08-10
申请号:US15910739
申请日:2018-03-02
Applicant: Lam Research Corporation
Inventor: Lin Xu , Robin Koshy , John E. Daugherty , Satish Srinivasan , David Wetzel
IPC: H01J37/32 , C23C16/40 , C23C16/56 , C23C16/455
Abstract: A quartz structure includes a protective layer comprising yttrium oxide. The quartz structure may be fabricated by: (a) receiving a quartz structure; and (b) coating the quartz structure with a protective layer comprising yttrium oxide to form a part to be used in the plasma reactor. The part has a size and shape adapted for forming a window or injector in a plasma reactor. The protective layer does not substantially change the size or shape of the quartz structure. The part may be installed in the plasma reactor at a location where, during operation, a plasma will contact or be proximate to the part.
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公开(公告)号:US20210343510A1
公开(公告)日:2021-11-04
申请号:US17305883
申请日:2021-07-16
Applicant: Lam Research Corporation
Inventor: Lin Xu , Robin Koshy , John E. Daugherty , Satish Srinivasan , David Wetzel
IPC: H01J37/32 , C23C16/40 , C23C16/56 , C23C16/455
Abstract: A quartz structure includes a protective layer comprising yttrium oxide. The quartz structure may be fabricated by: (a) receiving a quartz structure; and (b) coating the quartz structure with a protective layer comprising yttrium oxide to form a part to be used in the plasma reactor. The part has a size and shape adapted for forming a window or injector in a plasma reactor. The protective layer does not substantially change the size or shape of the quartz structure. The part may be installed in the plasma reactor at a location where, during operation, a plasma will contact or be proximate to the part.
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公开(公告)号:US20190272981A1
公开(公告)日:2019-09-05
申请号:US15910739
申请日:2018-03-02
Applicant: Lam Research Corporation
Inventor: Lin Xu , Robin Koshy , John E. Daugherty , Satish Srinivasan , David Wetzel
IPC: H01J37/32 , C23C16/40 , C23C16/56 , C23C16/455
Abstract: A quartz structure includes a protective layer comprising yttrium oxide. The quartz structure may be fabricated by: (a) receiving a quartz structure; and (b) coating the quartz structure with a protective layer comprising yttrium oxide to form a part to be used in the plasma reactor. The part has a size and shape adapted for forming a window or injector in a plasma reactor. The protective layer does not substantially change the size or shape of the quartz structure. The part may be installed in the plasma reactor at a location where, during operation, a plasma will contact or be proximate to the part.
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