公开(公告)号：US10243090B2

公开(公告)日：2019-03-26

申请号：US14734870

申请日：2015-06-09

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung Yang ,  Junghoon Choi ,  Changseo Park ,  Hyungjin Kwon

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0745

Abstract: Discussed is a method for manufacturing a solar cell. The method includes forming a tunneling layer on a semiconductor substrate; forming a semiconductor layer on the tunneling layer, wherein the forming of the semiconductor layer including depositing a semiconductor material; and forming an electrode connected to the semiconductor layer. The tunneling layer is formed under a temperature higher than room temperature and a pressure lower than atmospheric pressure.

公开(公告)号：US10256364B2

公开(公告)日：2019-04-09

申请号：US15858016

申请日：2017-12-29

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung Yang ,  Hyungjin Kwon ,  Chungyi Kim ,  Junghoon Choi

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/068 ,  H01L21/02

Abstract: A method of manufacturing a solar cell, the method includes forming a protective film over a semiconductor substrate, the semiconductor substrate including a base area of a first conductive type and formed of crystalline silicon, wherein the forming of the protective film includes a heat treatment process performed at a heat treatment temperature of approximately 600 degrees Celsius or more under a gas atmosphere including nitrogen, and wherein the heat treatment process includes: a main section, during which the heat treatment temperature is maintained, a temperature increase section before the main section, during which an increase in temperature occurs from an introduction temperature to the heat treatment temperature, and a temperature reduction section after the main section, during which a decrease in temperature occurs from the heat treatment temperature to a discharge temperature.

公开(公告)号：US09412885B2

公开(公告)日：2016-08-09

申请号：US14861789

申请日：2015-09-22

Applicant: LG ELECTRONICS INC.

Inventor： Juhong Yang ,  Jinah Kim ,  Jeongbeom Nam ,  Dohwan Yang ,  Indo Chung ,  Ilhyoung Jung ,  Hyungjin Kwon

IPC: H01L31/0236 ,  H01L31/068 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/0352

CPC classification number: H01L31/02168 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035272 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547

Abstract: A solar cell can include a substrate of a first conductive type; an emitter region of a second conductive type opposite the first conductive type and which forms a p-n junction along with the substrate; an anti-reflection layer positioned on the emitter region; a front electrode part electrically connected to the emitter region; and a back electrode part electrically connected to the substrate, wherein the substrate including a first area formed of single crystal silicon and a second area formed of polycrystalline silicon, wherein a thickness of the anti-reflection layer positioned on the first area is less than a thickness of the anti-reflection layer positioned on the second area, wherein a roughness of an incident surface of the substrate in the first area is different from a roughness of the incident surface of the substrate in the second area, and wherein the emitter region is entirely formed on the incident surface of the substrate.

Abstract translation: 太阳能电池可以包括第一导电类型的衬底; 与第一导电类型相反并且与衬底一起形成p-n结的第二导电类型的发射极区域; 位于发射极区域上的防反射层; 电连接到发射极区域的前电极部分; 以及电连接到所述基板的背面电极部，其中，所述基板包括由单晶硅形成的第一区域和由多晶硅形成的第二区域，其中位于所述第一区域上的所述防反射层的厚度小于 位于第二区域的防反射层的厚度，其中第一区域中的基板的入射表面的粗糙度不同于第二区域中的基板的入射表面的粗糙度，并且其中发射极区域 完全形成在基板的入射表面上。

公开(公告)号：US10910502B2

公开(公告)日：2021-02-02

申请号：US16242561

申请日：2019-01-08

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung Yang ,  Junghoon Choi ,  Changseo Park ,  Hyungjin Kwon

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/0745 ,  H01L31/0216

Abstract: A method for manufacturing a solar cell, the method includes forming a tunneling layer on a semiconductor substrate; forming a semiconductor layer on the tunneling layer, wherein the forming of the semiconductor layer includes depositing a semiconductor material; forming a capping layer on the semiconductor layer; and forming an electrode connected to the semiconductor layer, wherein the tunneling layer is formed under a temperature higher than room temperature and a pressure lower than atmospheric pressure, wherein a pressure of the forming of the semiconductor layer is smaller than the pressure of the forming of the tunneling layer, wherein the forming of the semiconductor layer further comprises doping the semiconductor layer with dopants, and wherein the capping layer is formed between the forming of the semiconductor layer and the forming of the electrode.

公开(公告)号：US09887314B2

公开(公告)日：2018-02-06

申请号：US15178274

申请日：2016-06-09

Applicant: LG ELECTRONICS INC.

Inventor： Youngsung Yang ,  Hyungjin Kwon ,  Chungyi Kim ,  Junghoon Choi

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/068 ,  H01L21/02

CPC classification number: H01L31/1868 ,  H01L21/02131 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L31/02167 ,  H01L31/0682 ,  H01L31/1864 ,  Y02E10/547

Abstract: Disclosed is a method of manufacturing a solar cell. The method includes forming a protective film using an insulation film over a semiconductor substrate, the semiconductor substrate including a base area of a first conductive type and formed of crystalline silicon. The forming of the protective film includes a heat treatment process performed at a heat treatment temperature of 600 degrees Celsius or more under a gas atmosphere including a halogen gas, which has a halogen element.

公开(公告)号：US10833210B2

公开(公告)日：2020-11-10

申请号：US14323986

申请日：2014-07-03

Applicant: LG ELECTRONICS INC.

Inventor： Hyungjin Kwon ,  Hyunjung Park ,  Junghoon Choi ,  Changseo Park

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/068 ,  H01L31/028

Abstract: Discussed is a solar cell including a semiconductor substrate, a tunneling layer formed on one surface of the semiconductor substrate, a first conductive semiconductor layer formed on a surface of the tunneling layer and a second conductive semiconductor layer formed on the surface the tunneling layer. A separation portion separates the first and second conductive semiconductor layers from each other, and is formed on the surface of the tunneling layer at a location corresponding to at least a portion of a boundary between the first and second conductive semiconductor layers.

公开(公告)号：US20150007879A1

公开(公告)日：2015-01-08

申请号：US14323986

申请日：2014-07-03

Applicant: LG ELECTRONICS INC.

Inventor： Hyungjin Kwon ,  Hyunjung Park ,  Junghoon Choi ,  Changseo Park

IPC: H01L31/0224 ,  H01L31/028 ,  H01L31/18

Abstract: Discussed is a solar cell including a semiconductor substrate, a tunneling layer formed on one surface of the semiconductor substrate, a first conductive semiconductor layer formed on a surface of the tunneling layer and a second conductive semiconductor layer formed on the surface the tunneling layer. A separation portion separates the first and second conductive semiconductor layers from each other, and is formed on the surface of the tunneling layer at a location corresponding to at least a portion of a boundary between the first and second conductive semiconductor layers.

Abstract translation: 讨论了包括半导体衬底，形成在半导体衬底的一个表面上的隧道层的太阳能电池，形成在隧道层的表面上的第一导电半导体层和形成在隧道层的表面上的第二导电半导体层。 分离部分将第一和第二导电半导体层彼此分离，并且在与第一和第二导电半导体层之间的边界的至少一部分相对应的位置处形成在隧道层的表面上。