公开(公告)号：US20250107089A1

公开(公告)日：2025-03-27

申请号：US18938654

申请日：2024-11-06

Applicant: Lodestar Licensing Group LLC

Inventor： John D. Hopkins ,  Purnima Narayanan ,  Jordan D. Greenlee

IPC: H10B43/27 ,  H01L21/311 ,  H01L21/3215 ,  H01L21/768 ,  H01L23/522 ,  H01L27/06 ,  H10B41/27 ,  H10B41/35 ,  H10B43/20 ,  H10B43/35

Abstract: Some embodiments include a method of forming an integrated assembly. A stack of alternating first and second materials is formed over a conductive structure. The conductive structure includes a semiconductor-containing material over a metal-containing material. An opening is formed to extend through the stack and through the semiconductor-containing material, to expose the metal-containing material. The semiconductor-containing material is doped with carbon and/or with one or more metals. After the doping of the semiconductor-containing material, the second material of the stack is removed to form voids. Conductive material is formed within the voids. Insulative material is formed within the opening. Some embodiments include integrated assemblies having carbon distributed within at least a portion of a semiconductor material.

公开(公告)号：US20250098168A1

公开(公告)日：2025-03-20

申请号：US18966387

申请日：2024-12-03

Applicant: Lodestar Licensing Group LLC

Inventor： John D. Hopkins ,  Shyam Surthi ,  Jordan D. Greenlee

IPC: H10B43/27 ,  H01L21/02 ,  H01L21/28 ,  H01L29/49 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  H10B41/27

Abstract: Some embodiments include a NAND memory array having a vertical stack of alternating insulative levels and conductive levels. The conductive levels include terminal regions, and include nonterminal regions proximate the terminal regions. The terminal regions are vertically thicker than the nonterminal regions, and are configured as segments which are vertically stacked one atop another and which are vertically spaced from one another. Blocks are adjacent to the segments and have approximately a same vertical thickness as the segments. The blocks include high-k dielectric material, charge-blocking material and charge-storage material. Channel material extends vertically along the stack and is adjacent to the blocks. Some embodiments include integrated assemblies. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US20240349498A1

公开(公告)日：2024-10-17

申请号：US18752438

申请日：2024-06-24

Applicant: Lodestar Licensing Group LLC

Inventor： John D. Hopkins ,  Jordan D. Greenlee ,  Nancy M. Lomeli

IPC: H10B41/27 ,  G11C5/02 ,  G11C5/06 ,  H01L23/538 ,  H10B43/27 ,  H10B43/50

CPC classification number: H10B41/27 ,  G11C5/025 ,  G11C5/06 ,  H01L23/5386 ,  H10B43/27 ,  H10B43/50

Abstract: A method of forming a microelectronic device comprises forming a sacrificial material over a base structure. Portions of the sacrificial material are replaced with an etch-resistant material. A stack structure is formed over the etch-resistant material and remaining portions of the sacrificial material. The stack structure comprises a vertically alternating sequence of insulative material and additional sacrificial material arranged in tiers, and at least one staircase structure horizontally overlapping the etch-resistant material and having steps comprising horizontal ends of the tiers. Slots are formed to vertically extend through the stack structure and the remaining portions of the sacrificial material. The sacrificial material and the additional sacrificial material are selectively replaced with conductive material after forming the slots to respectively form lateral contact structures and conductive structures. Microelectronic devices, memory devices, and electronic systems are also described.

公开(公告)号：US12002759B2

公开(公告)日：2024-06-04

申请号：US17660669

申请日：2022-04-26

Applicant: Lodestar Licensing Group LLC

Inventor： Jordan D. Greenlee ,  Lifang Xu ,  Rita J. Klein ,  Xiao Li ,  Everett A. McTeer

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/00 ,  H01L23/522 ,  H10B41/27 ,  H10B41/41

CPC classification number: H01L23/53266 ,  H01L21/76846 ,  H01L23/5226 ,  H01L23/562 ,  H10B41/27 ,  H10B41/41

Abstract: An apparatus comprising at least one contact structure. The at least one contact structure comprises a contact, an insulating material overlying the contact, and at least one contact via in the insulating material. The at least one contact structure also comprises a dielectric liner material adjacent the insulating material within the contact via, a conductive material adjacent the dielectric liner material, and a stress compensation material adjacent the conductive material and in a central portion of the at least one contact via. The stress compensation material is at least partially surrounded by the conductive material. Memory devices, electronic systems, and methods of forming the apparatus are also disclosed.

公开(公告)号：US12274063B2

公开(公告)日：2025-04-08

申请号：US18384455

申请日：2023-10-27

Applicant: Lodestar Licensing Group LLC

Inventor： Jordan D. Greenlee ,  John D. Hopkins

IPC: H10B43/27 ,  H01L21/02 ,  H01L21/28 ,  H01L21/311 ,  H10B41/10 ,  H10B41/27 ,  H10B43/10

Abstract: Some embodiments include an integrated assembly having a second deck over a first deck. The first deck has first memory cell levels, and the second deck has second memory cell levels. A pair of cell-material-pillars pass through the first and second decks. Memory cells are along the first and second memory cell levels. The cell-material-pillars are a first pillar and a second pillar. An intermediate level is between the first and second decks. The intermediate level includes a region between the first and second pillars. The region includes a first segment adjacent the first pillar, a second segment adjacent the second pillar, and a third segment between the first and second segments. The first and second segments include a first composition, and the third segment includes a second composition different from the first composition. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US12185544B2

公开(公告)日：2024-12-31

申请号：US17867501

申请日：2022-07-18

Applicant: Lodestar Licensing Group LLC

Inventor： John D. Hopkins ,  Shyam Surthi ,  Jordan D. Greenlee

IPC: H10B43/27 ,  H01L21/02 ,  H01L21/28 ,  H01L29/49 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  H10B41/27

Abstract: Some embodiments include a NAND memory array having a vertical stack of alternating insulative levels and conductive levels. The conductive levels include terminal regions, and include nonterminal regions proximate the terminal regions. The terminal regions are vertically thicker than the nonterminal regions, and are configured as segments which are vertically stacked one atop another and which are vertically spaced from one another. Blocks are adjacent to the segments and have approximately a same vertical thickness as the segments. The blocks include high-k dielectric material, charge-blocking material and charge-storage material. Channel material extends vertically along the stack and is adjacent to the blocks. Some embodiments include integrated assemblies. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US12144176B2

公开(公告)日：2024-11-12

申请号：US17347587

申请日：2021-06-15

Applicant: Lodestar Licensing Group LLC

Inventor： John D. Hopkins ,  Purnima Narayanan ,  Jordan D. Greenlee

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/3215 ,  H01L23/522 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35 ,  H01L27/06 ,  H10B43/20

Abstract: Some embodiments include a method of forming an integrated assembly. A stack of alternating first and second materials is formed over a conductive structure. The conductive structure includes a semiconductor-containing material over a metal-containing material. An opening is formed to extend through the stack and through the semiconductor-containing material, to expose the metal-containing material. The semiconductor-containing material is doped with carbon and/or with one or more metals. After the doping of the semiconductor-containing material, the second material of the stack is removed to form voids. Conductive material is formed within the voids. Insulative material is formed within the opening. Some embodiments include integrated assemblies having carbon distributed within at least a portion of a semiconductor material.

公开(公告)号：US20240153877A1

公开(公告)日：2024-05-09

申请号：US18402618

申请日：2024-01-02

Applicant: Lodestar Licensing Group LLC

Inventor： Jordan D. Greenlee ,  John D. Hopkins ,  Rita J. Klein ,  Everett A. McTeer ,  Lifang Xu ,  Daniel Billingsley ,  Collin Howder

IPC: H01L23/535 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

CPC classification number: H01L23/535 ,  H01L21/76805 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76895 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53257 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

Abstract: A microelectronic device includes a stack structure, a staircase structure, conductive pad structures, and conductive contact structures. The stack structure includes vertically alternating conductive structures and insulating structures arranged in tiers. Each of the tiers individually includes one of the conductive structures and one of the insulating structures. The staircase structure has steps made up of edges of at least some of the tiers of the stack structure. The conductive pad structures are on the steps of the staircase structure and include beta phase tungsten. The conductive contact structures are on the conductive pad structures. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.

公开(公告)号：US11923415B2

公开(公告)日：2024-03-05

申请号：US17890565

申请日：2022-08-18

Applicant: Lodestar Licensing Group LLC

Inventor： Jordan D. Greenlee ,  John D. Hopkins

IPC: H01L29/08 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35

CPC classification number: H01L29/0847 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35

Abstract: Some embodiments include an integrated assembly having a source structure. The source structure includes, in ascending order, a first conductively-doped semiconductor material, one or more first insulative layers, a second conductively-doped semiconductor material, one or more second insulative layers, and a third conductively-doped semiconductor material. The source structure includes blocks extending through the second conductively-doped semiconductor material. Conductive levels are over the source structure. Channel material extends vertically along the conductive levels, and extends into the source structure to be in direct contact with the second conductively-doped semiconductor material. One or more memory cell materials are between the channel material and the conductive levels. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US20240057335A1

公开(公告)日：2024-02-15

申请号：US18384455

申请日：2023-10-27

Applicant: Lodestar Licensing Group LLC

Inventor： Jordan D. Greenlee ,  John D. Hopkins

IPC: H10B43/27 ,  H01L21/311 ,  H01L21/02 ,  H01L21/28 ,  H10B41/10 ,  H10B41/27 ,  H10B43/10

CPC classification number: H10B43/27 ,  H01L21/31111 ,  H01L21/02636 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/02129 ,  H01L29/40117 ,  H01L29/40114 ,  H10B41/10 ,  H10B41/27 ,  H10B43/10

Abstract: Some embodiments include an integrated assembly having a second deck over a first deck. The first deck has first memory cell levels, and the second deck has second memory cell levels. A pair of cell-material-pillars pass through the first and second decks. Memory cells are along the first and second memory cell levels. The cell-material-pillars are a first pillar and a second pillar. An intermediate level is between the first and second decks. The intermediate level includes a region between the first and second pillars. The region includes a first segment adjacent the first pillar, a second segment adjacent the second pillar, and a third segment between the first and second segments. The first and second segments include a first composition, and the third segment includes a second composition different from the first composition. Some embodiments include methods of forming integrated assemblies.