Stacked fan-out package structure

    公开(公告)号:US10692789B2

    公开(公告)日:2020-06-23

    申请号:US15968449

    申请日:2018-05-01

    Applicant: MediaTek Inc.

    Abstract: A semiconductor package structure is provided. The structure includes a first semiconductor die having a first surface and a second surface opposite thereto. A first molding compound surrounds the first semiconductor die. A first redistribution layer (RDL) structure is disposed on the second surface of the first semiconductor die and laterally extends on the first molding compound. A second semiconductor die is disposed on the first RDL structure and has a first surface and a second surface opposite thereto. A second molding compound surrounds the second semiconductor die. A first protective layer covers a sidewall of the first RDL structure and a sidewall of the first molding compound.

    Semiconductor package assembly
    3.
    发明授权

    公开(公告)号:US10177125B2

    公开(公告)日:2019-01-08

    申请号:US15618210

    申请日:2017-06-09

    Applicant: MediaTek Inc.

    Abstract: In one implementation, a semiconductor package assembly includes a first semiconductor package having a first semiconductor die and a first redistribution layer (RDL) structure coupled to the first semiconductor die. The first redistribution layer (RDL) structure includes a first conductive trace at a first layer-level, a second conductive trace at a second layer-level, and a first inter-metal dielectric (IMD) layer and a second inter-metal dielectric (IMD) layer, which is beside the first inter-metal dielectric (IMD) layer, wherein the second inter-metal dielectric (IMD) layer is disposed between the first conductive trace and the second conductive trace, and the second inter-metal dielectric (IMD) layer is zigzag shape in a cross-sectional view.

    STACKED FAN-OUT PACKAGE STRUCTURE
    4.
    发明申请

    公开(公告)号:US20180323127A1

    公开(公告)日:2018-11-08

    申请号:US15968449

    申请日:2018-05-01

    Applicant: MediaTek Inc.

    Abstract: A semiconductor package structure is provided. The structure includes a first semiconductor die having a first surface and a second surface opposite thereto. A first molding compound surrounds the first semiconductor die. A first redistribution layer (RDL) structure is disposed on the second surface of the first semiconductor die and laterally extends on the first molding compound. A second semiconductor die is disposed on the first RDL structure and has a first surface and a second surface opposite thereto. A second molding compound surrounds the second semiconductor die. A first protective layer covers a sidewall of the first RDL structure and a sidewall of the first molding compound.

    Low-Power Listen In Wireless Communications

    公开(公告)号:US20230117078A1

    公开(公告)日:2023-04-20

    申请号:US17961036

    申请日:2022-10-06

    Applicant: MediaTek Inc.

    Abstract: Techniques pertaining to low-power enhanced multi-link single radio (EMLSR) listen in wireless communications are described. A first multi-link device (MLD) reduces power consumption while supporting a latency-sensitive application by performing certain operations. The first MLD first listens at a lower power in a narrower bandwidth to receive an initial physical-layer protocol data unit (PPDU) from a second MLD as part of a frame exchange. In response to receiving the initial PPDU, the first MLD switches from the narrower bandwidth to a wider bandwidth to complete the frame exchange with the second MLD in the wider bandwidth. In reducing the power consumption, the first MLD reduces its power consumption to the lower power when operating in the narrower bandwidth compared to a higher power used by the first MLD when operating in the wider bandwidth.

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