公开(公告)号：US07315330B2

公开(公告)日：2008-01-01

申请号：US11159952

申请日：2005-06-23

申请人： Masaharu Hamasaki

发明人： Masaharu Hamasaki

IPC分类号： H04N5/225 ,  H04N3/14 ,  H04N5/335 ,  H04N5/222 ,  H03K23/46 ,  H01L27/00

CPC分类号： H04N5/3728 ,  H01L27/14806 ,  H01L27/14843 ,  H04N5/3456 ,  H04N5/361

摘要： In a case where a thinning operation is implemented at the point when signal charges are read out from each of pixels to thin out pixel information by lines (row), the thinning may be performed only in the vertical direction, but not in the horizontal direction. In an all-pixel-read-out type CCD image pickup element, a discharge controlling section is provided in each of VH transfer stage sections transferring signal charges from vertical CCDs to a horizontal CCD, and where a thinning mode is selected, among those signal charges transferred from a plurality of the vertical CCDs, those of a given set of columns are stopped and discharged at the respective discharge controlling sections, and those of the rest of columns are transferred to the horizontal CCD, and at the same time, those of a given set of lines (rows) are stopped and discharged for all columns, thereby performing the thinning operation over the pixel information in both the vertical and horizontal directions at the VH transfer stage.

摘要翻译： 在从每个像素读出信号电荷并通过行（行）来稀释像素信息的点实现间隔操作的情况下，可以仅在垂直方向上而不是在水平方向上执行间隔 。 在全像素读出型CCD图像拾取元件中，在VH传送级部分中设置放电控制部分，其将信号电荷从垂直CCD传输到水平CCD，并且在那些信号中选择了稀疏模式 从多个垂直CCD传送的电荷，给定的一组列的电荷在各个放电控制部分被停止并放电，其余的列被转移到水平CCD，同时， 针对所有列停止给定的行（行）给定的一组，从而在VH传送阶段对垂直和水平方向的像素信息进行稀疏操作。

公开(公告)号：US20100238340A1

公开(公告)日：2010-09-23

申请号：US12795119

申请日：2010-06-07

申请人： Masaharu Hamasaki

发明人： Masaharu Hamasaki

IPC分类号： H04N5/335

CPC分类号： H04N5/3728 ,  H01L27/14806 ,  H01L27/14843 ,  H04N5/3456 ,  H04N5/361

摘要： In a case where a thinning operation is implemented at the point when signal charges are read out from each of pixels to thin out pixel information by lines (row), the thinning may be performed only in the vertical direction, but not in the horizontal direction. In an all-pixel-read-out type CCD image pickup element, a discharge controlling section is provided in each of VH transfer stage sections transferring signal charges from vertical CCDs to a horizontal CCD, and where a thinning mode is selected, among those signal charges transferred from a plurality of the vertical CCDs, those of a given set of columns are stopped and discharged at the respective discharge controlling sections, and those of the rest of columns are transferred to the horizontal CCD, and at the same time, those of a given set of lines (rows) are stopped and discharged for all columns, thereby performing the thinning operation over the pixel information in both the vertical and horizontal directions at the VH transfer stage.

摘要翻译： 在从每个像素读取信号电荷并通过行（行）来稀释像素信息的点实现间隔操作的情况下，可以仅在垂直方向上而不是在水平方向上执行间隔 。 在全像素读出型CCD图像拾取元件中，在VH传送级部分中设置放电控制部分，其将信号电荷从垂直CCD传输到水平CCD，并且在那些信号中选择了稀疏模式 从多个垂直CCD传送的电荷，给定的一组列的电荷在各个放电控制部分被停止并放电，其余的列被转移到水平CCD，同时， 针对所有列停止给定的行（行）给定的一组，从而在VH传送阶段对垂直和水平方向的像素信息进行稀疏操作。

公开(公告)号：US5821750A

公开(公告)日：1998-10-13

申请号：US711231

申请日：1996-09-09

申请人： Masaharu Hamasaki

发明人： Masaharu Hamasaki

IPC分类号： G01R33/02 ,  G01R33/06 ,  G01R33/07 ,  H01L21/339 ,  H01L27/148 ,  H01L29/762 ,  H01L43/06 ,  H01L29/76 ,  H01L29/82

CPC分类号： G01R33/06 ,  H01L27/148 ,  H01L43/06

摘要： A plurality (e.g., an odd number) of CCD shift registers are provided in parallel, and a channel stop separates between the respective adjacent CCD shift registers and is partially cut out in order to make it possible for a carrier which passes through the CCD shift registers to move toward the side portion. Carrier (electrons) supplied from an input section to the center CCD shift register are measured at the outputs of the other CCD shift registers, and the intensity (the magnetic-flux density) of the magnetic field is determined on the basis of the absolute value thereof, and the direction of the lines of magnetic force is determined on the basis of whether the difference is positive or negative.

摘要翻译： 多个（例如，奇数）的CCD移位寄存器并行设置，并且通道停止在各个相邻的CCD移位寄存器之间分离，并被部分地切出，以便使通过CCD移位的载体成为可能 注册以朝向侧面部分移动。 在其他CCD移位寄存器的输出处测量从输入部分提供给中心CCD移位寄存器的载流子（电子），并且基于绝对值确定磁场的强度（磁通密度） 并且基于该差为正还是负来确定磁力线的方向。

公开(公告)号：US5410348A

公开(公告)日：1995-04-25

申请号：US16549

申请日：1993-02-11

申请人： Masaharu Hamasaki

发明人： Masaharu Hamasaki

IPC分类号： H04N5/335 ,  H04N5/341 ,  H04N5/353 ,  H04N5/357 ,  H04N5/363 ,  H04N5/369 ,  H04N5/374 ,  H04N5/378 ,  H04N3/14

CPC分类号： H04N5/3575 ,  H04N5/374 ,  H04N5/376 ,  H04N5/378

摘要： The present invention is directed to a solid state image sensor in which one horizontal line from an image sensor section is selected as a line in which a signal is read out from a pixel, a signal is read out to a vertical signal line by a vertical scanning in which selected horizontal lines are sequentially switched, and pixel the signal of the horizontal line, processed in a correlation double sampling fashion, is read out to a horizontal signal line in a constant order. This solid state image sensor has an electronic shutter function includes an electronic shutter scanning means for resetting a horizontal line spaced apart from a horizontal line currently read out by a shutter time in the vertical scanning direction.

摘要翻译： 本发明涉及一种固态图像传感器，其中来自图像传感器部分的一条水平线被选择为从像素读出信号的行，将信号通过垂直方向读出到垂直信号线 扫描其中所选择的水平行被顺序地切换，并且以相关双重采样方式处理的水平线的信号以恒定顺序被读出到水平信号线。 该固态图像传感器具有电子快门功能，该电子快门功能包括电子快门扫描装置，用于重置与当前在垂直扫描方向上的快门时间读出的水平线间隔开的水平线。

公开(公告)号：US5029190A

公开(公告)日：1991-07-02

申请号：US502688

申请日：1990-04-02

申请人： Tadakuni Narabu ,  Masaharu Hamasaki ,  Tetsuya Iizuka

发明人： Tadakuni Narabu ,  Masaharu Hamasaki ,  Tetsuya Iizuka

IPC分类号： H01L29/762 ,  G11C19/28 ,  H01L21/339 ,  H01L27/148

CPC分类号： H01L27/148 ,  G11C19/285

摘要： An output circuit for CCD imager devices or CCD delay devices is disclosed in which a depletion type second MIS transistor is connected to the drain side of a first MIS transistor constituting a source follower adapted for converting transferred signal signals into an electrical voltage, and an output voltage is supplied to the gate of the second MIS transistor. This depletion type second MIS transistor causes the drain potential of the first MIS transistor to be changed in phase with the input electrical charges to reduce the gate-to-drain capacitance of the first MIS transistor to improve the charge-to-voltage conversion gain.

公开(公告)号：US4951104A

公开(公告)日：1990-08-21

申请号：US295515

申请日：1989-01-11

申请人： Yasaburo Kato ,  Toshihiko Suzuki ,  Nobuyuki Isawa ,  Hideo Kanbe ,  Masaharu Hamasaki

发明人： Yasaburo Kato ,  Toshihiko Suzuki ,  Nobuyuki Isawa ,  Hideo Kanbe ,  Masaharu Hamasaki

IPC分类号： C30B15/30 ,  C30B31/20 ,  H01J9/233 ,  H01L21/261 ,  H01L27/148 ,  H01L29/78 ,  H01L31/18

CPC分类号： H01L21/261 ,  C30B15/305 ,  C30B31/20 ,  H01L27/14831 ,  H01L27/14887 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for fabricating a solid-state image pick-up device changes part of the constituent elemental Si into the n-type impurity phosphorus P, thus changing the substrate to an n-type, by atomic transmutation through neutron irradiation of a p-type silicon Si wafer, and thus produces a Si substrate with a resistivity .rho..sub.s of 10 to 100 ohm-cm. or preferably 40 to 60 ohm-cm. A solid-state image pick-up device with a plurality of photosensors and vertical and horizontal shift registers as set forth above is then fabricated using the resulting Si substrate. In the preferred process, the silicon substrate can be obtained by irradiating a wafer sectioned from a crystal grown by the MCZ method, for instance, with neutrons as described before until it has the required resistivity .rho..sub.s. This silicon substrate is preferably of a p-type before neutron irradiation, that is, in the crystal growth state, and its resistivity .rho..sub.o is then ten or more times higher (100 ohm-cm. or more) than that .rho..sub.s obtained following neutron irradiation. For instance, if .rho..sub.s is to be 40 to 50 ohm-cm., .rho..sub.o should be 680 to 1180 ohm-cm. Then n-type impurities, e.g. phosphorus P are generated by neutron irradiation to convert the silicon substrate to n-type with a low resistivity of .rho..sub.S =10 to 100 ohm-cm., or of 40 to 50 ohm-cm.

摘要翻译： 固态摄像装置的制造方法将构成元素Si的一部分变更为n型杂质磷P，由此通过p型的中子照射使基板变为n型 硅Si晶片，并且因此产生电阻率rho为10至100ohm-cm的Si衬底。 或优选为40至60欧姆 - 厘米。 然后使用所得到的Si衬底制造具有如上所述的多个光电传感器和垂直和水平移位寄存器的固态图像拾取装置。 在优选的方法中，可以通过照射由通过MCZ方法生长的晶体（例如，如上所述的中子）分离的晶片直到其具有所需的电阻率rho s来获得硅衬底。 该硅衬底优选在中子照射之前为p型，即处于晶体生长状态，并且其电阻率rho o比后续获得的rho多高十倍以上（100ohm-cm以上） 中子照射。 例如，如果rho为40〜50ohm-cm，则rho应为680〜1180ohm-cm。 然后，n型杂质，例如 磷P通过中子照射产生，以将硅衬底转换成具有低电阻率的rho = 10至100欧姆 - 厘米或40至50欧姆 - 厘米的n型。

公开(公告)号：US4836788A

公开(公告)日：1989-06-06

申请号：US927161

申请日：1986-11-05

申请人： Yasaburo Kato ,  Toshihiko Suzuki ,  Nobuyuki Isawa ,  Hideo Kanbe ,  Masaharu Hamasaki

发明人： Yasaburo Kato ,  Toshihiko Suzuki ,  Nobuyuki Isawa ,  Hideo Kanbe ,  Masaharu Hamasaki

IPC分类号： C30B15/30 ,  C30B31/20 ,  H01J9/233 ,  H01L21/261 ,  H01L27/148 ,  H01L29/78 ,  H01L31/18

CPC分类号： H01L21/261 ,  C30B15/305 ,  C30B31/20 ,  H01L27/14831 ,  H01L27/14887 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for fabricating a solid-state image pick-up device changes part of the constituent elemental Si into the n-type impurity phosphorus P, thus changing the substrate to an n-type, by atomic transmutation through neutron irradiation of a p-type silicon Si wafer, and thus produces a Si substrate with a resistivity .rho..sub.s of 10 to 100 ohm-cm. or preferably 40 to 60 ohm-cm. A solid-state image pick-up device with a plurality of photosensors and vertical and horizontal shift registers as set forth above is then fabricated using the resulting Si substrate. In the preferred process, the silicon substrate can be obtained by irradiating a wafer sectioned from a crystal grown by the MCZ method, for instance, with neutrons as described before until it has the required resistivity .rho..sub.s. This silicon substrate is preferably of a p-type before neutron irradiation, that is, in the crystal growth state, and its resistivity .rho..sub.o is then ten or more times higher (100 ohm-cm. or more) than that .rho..sub.s obtained following neutron irradiation. For instance, if .rho..sub.s is to be 40 to 50 ohm-cm., .rho..sub.o should be 680 to 1180 ohm-cm. Then, n-type impurities, e.g. phosphorus P are generated by neutron irradiation to convert the silicon substrate to n-type with a low resistivity of .rho..sub.s =10 to 100 ohm-cm., or of 40 to 50 ohm-cm.

摘要翻译： 固态摄像装置的制造方法将构成元素Si的一部分变更为n型杂质磷P，由此通过p型的中子照射使基板变为n型 硅Si晶片，并且因此产生电阻率rho为10至100ohm-cm的Si衬底。 或优选为40至60欧姆 - 厘米。 然后使用所得到的Si衬底制造具有如上所述的多个光电传感器和垂直和水平移位寄存器的固态图像拾取装置。 在优选的方法中，可以通过照射由通过MCZ方法生长的晶体（例如，如上所述的中子）分离的晶片直到其具有所需的电阻率rho s来获得硅衬底。 该硅衬底优选在中子照射之前为p型，即处于晶体生长状态，并且其电阻率rho o比后续获得的rho多高十倍以上（100ohm-cm以上） 中子照射。 例如，如果rho为40〜50ohm-cm，则rho应为680〜1180ohm-cm。 然后，n型杂质，例如 磷P通过中子照射产生，以将硅衬底转换成具有低电阻率的rho = 10至100欧姆 - 厘米或40至50欧姆 - 厘米的n型。

公开(公告)号：US09127671B2

公开(公告)日：2015-09-08

申请号：US12933912

申请日：2009-07-22

申请人： Hisashi Ono ,  Masaharu Hamasaki ,  Yuki Nishida ,  Koji Nunami ,  Shinji Kazaoka

发明人： Hisashi Ono ,  Masaharu Hamasaki ,  Yuki Nishida ,  Koji Nunami ,  Shinji Kazaoka

IPC分类号： F04C2/10 ,  F04C2/08 ,  F04C14/08 ,  F04C14/22

CPC分类号： F04C2/102 ,  F04C2/086 ,  F04C14/08 ,  F04C14/226

摘要： An oil pump includes: an inner rotor rotatable with a drive shaft in a unified manner on a drive-rotation axis; an outer rotor which has inner teeth configured to engage with outer teeth of the inner rotor and is rotatable about a driven axis eccentric to the drive-rotation axis; and an adjustment ring for rotatably supporting the outer rotor. A guide means which allows the adjustment ring to rotate about the driven axis, while allowing the driven axis to revolve about the drive-rotation axis, is formed of: first and second arm portions provided on the adjustment ring; and first and second guide faces with which the first and second arm portions are brought into slidable contact.

摘要翻译： 油泵包括：内转子，其以驱动轴在驱动旋转轴线上以统一的方式旋转; 外转子，其内齿构造成与内转子的外齿接合，并且能够围绕偏心于驱动旋转轴的从动轴旋转; 以及用于可旋转地支撑外转子的调节环。 引导装置，其允许调节环围绕驱动轴线旋转，同时允许从动轴围绕驱动旋转轴线旋转，由导向装置形成：设置在调节环上的第一和第二臂部分; 以及第一和第二引导面，第一和第二引导面与第一和第二臂部分可滑动接触。

公开(公告)号：US06967685B2

公开(公告)日：2005-11-22

申请号：US09792245

申请日：2001-02-23

申请人： Masaharu Hamasaki

发明人： Masaharu Hamasaki

IPC分类号： H01L21/339 ,  H01L27/148 ,  H01L29/762 ,  H04N5/225 ,  H04N5/335 ,  H04N5/341 ,  H04N5/345 ,  H04N5/359 ,  H04N5/361 ,  H04N5/369 ,  H04N5/372 ,  H04N5/3728 ,  H04N101/00 ,  H04N3/14 ,  G11C19/28 ,  H01L27/00

CPC分类号： H04N5/3728 ,  H01L27/14806 ,  H01L27/14843 ,  H04N5/3456 ,  H04N5/361

摘要： In a case where a thinning operation is implemented at the point when signal charges are read out from each of pixels to thin out pixel information by lines (row), the thinning may be performed only in the vertical direction, but not in the horizontal direction. In an all-pixel-read-out type CCD image pickup element, a discharge controlling section is provided in each of VH transfer stage sections transferring signal charges from vertical CCDs to a horizontal CCD, and where a thinning mode is selected, among those signal charges transferred from a plurality of the vertical CCDs, those of a given set of columns are stopped and discharged at the respective discharge controlling sections, and those of the rest of columns are transferred to the horizontal CCD, and at the same time, those of a given set of lines (rows) are stopped and discharged for all columns, thereby performing the thinning operation over the pixel information in both the vertical and horizontal directions at the VH transfer stage.

摘要翻译： 在从每个像素读出信号电荷并通过行（行）来稀释像素信息的点实现间隔操作的情况下，可以仅在垂直方向上而不是在水平方向上执行间隔 。 在全像素读出型CCD图像拾取元件中，在VH传送级部分中设置放电控制部分，其将信号电荷从垂直CCD传输到水平CCD，并且在那些信号中选择了稀疏模式 从多个垂直CCD传送的电荷，给定的一组列的电荷在各个放电控制部分被停止并放电，其余的列被转移到水平CCD，同时， 针对所有列停止给定的行（行）给定的一组，从而在VH传送阶段对垂直和水平方向的像素信息进行稀疏操作。

公开(公告)号：US5990952A

公开(公告)日：1999-11-23

申请号：US659078

申请日：1996-06-03

申请人： Masaharu Hamasaki

发明人： Masaharu Hamasaki

IPC分类号： H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/347 ,  H04N5/355 ,  H04N5/369 ,  H04N5/3728 ,  H04N5/378 ,  H04N3/14

CPC分类号： H04N3/155

摘要： A method driving for a solid-state image pickup device in which it is possible to achieve a high dynamic range readout without causing unnaturalness in the reproduced picture particularly even when filming a subject moving at high speed. Primary signal charges are generated by adjacent first and second pixels and are subsequently mixed in the vertical transfer register. Auxiliary signal charges are also generated in adjacent first and second pixels, and, generation of the primary signal charge for the second pixel occurs prior to generation of the auxiliary signal charge of the first pixel.

摘要翻译： 一种驱动固态摄像装置的方法，其中即使在拍摄被摄体高速移动的情况下，也可能实现高动态范围读出而不会引起再现图像中的不自然现象。 主信号电荷由相邻的第一和第二像素产生，并随后在垂直传送寄存器中混合。 在相邻的第一和第二像素中也产生辅助信号电荷，并且在产生第一像素的辅助信号电荷之前，产生用于第二像素的主信号电荷。