公开(公告)号：US07501352B2

公开(公告)日：2009-03-10

申请号：US11093260

申请日：2005-03-30

申请人： Masanobu Igeta ,  Cory Wajda ,  David L. O'Meara ,  Kristen Scheer ,  Toshihara Eurakawa

发明人： Masanobu Igeta ,  Cory Wajda ,  David L. O'Meara ,  Kristen Scheer ,  Toshihara Eurakawa

IPC分类号： H01L21/31

CPC分类号： C23C8/34 ,  C23C8/36 ,  H01J37/32192 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3144 ,  H01L21/31662

摘要： The present invention generally provides a method for preparing an oxynitride film on a substrate. A surface of the substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film on the surface. The oxide film is exposed to nitrogen radicals formed by plasma induced dissociation of a second process gas comprising at least one molecular composition comprising nitrogen using plasma based on microwave irradiation via a plane antenna member having a plurality of slits to nitridate the oxide film and form the oxynitride film.

摘要翻译： 本发明通常提供了在基板上制备氮氧化物膜的方法。 衬底的表面暴露于通过紫外线（UV）辐射诱导的包含至少一种包含氧的分子组合物的第一工艺气体的解离形成的氧自由基，以在表面上形成氧化膜。 氧化物膜暴露于通过等离子体诱导的包含至少一种包含氮的分子组合物的等离子体诱导的解离形成的氮自由基，所述分子组合物包含氮，使用基于微波照射的等离子体通过具有多个狭缝的平面天线构件来氮化氧化膜并形成 氧氮化物膜。

公开(公告)号：US20060228902A1

公开(公告)日：2006-10-12

申请号：US11093260

申请日：2005-03-30

申请人： Masanobu Igeta ,  Cory Wajda ,  David O'Meara ,  Kristen Scheer ,  Toshihara Eurakawa

发明人： Masanobu Igeta ,  Cory Wajda ,  David O'Meara ,  Kristen Scheer ,  Toshihara Eurakawa

IPC分类号： H01L21/31

CPC分类号： C23C8/34 ,  C23C8/36 ,  H01J37/32192 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3144 ,  H01L21/31662

摘要： The present invention generally provides a method for preparing an oxynitride film on a substrate. A surface of the substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film on the surface. The oxide film is exposed to nitrogen radicals formed by plasma induced dissociation of a second process gas comprising at least one molecular composition comprising nitrogen using plasma based on microwave irradiation via a plane antenna member having a plurality of slits to nitridate the oxide film and form the oxynitride film.

公开(公告)号：US20070066084A1

公开(公告)日：2007-03-22

申请号：US11231335

申请日：2005-09-21

申请人： Cory Wajda ,  David O'Meara ,  Masanobu Igeta

发明人： Cory Wajda ,  David O'Meara ,  Masanobu Igeta

IPC分类号： H01L21/471 ,  B05C5/00

CPC分类号： H01L21/3185 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02337 ,  H01L21/3105 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31662

摘要： A method and processing system for treating a surface of a substrate. The surface is exposed to at least two radicals from at least two radical sources. The radicals generated from the respective radical sources interact with different areas of the substrate surface. The invention suitably improves uniformity of oxidation, nitridation, or both.

摘要翻译： 一种用于处理基材表面的方法和处理系统。 该表面暴露于至少两个自由基来源的至少两个基团。 由各自的基团产生的自由基与衬底表面的不同区域相互作用。 本发明适合提高氧化，氮化或两者的均匀性。

公开(公告)号：US20060228898A1

公开(公告)日：2006-10-12

申请号：US11093261

申请日：2005-03-30

申请人： Cory Wajda ,  Masanobu Igeta ,  Gerrit Leusink

发明人： Cory Wajda ,  Masanobu Igeta ,  Gerrit Leusink

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C8/34 ,  C23C8/36 ,  H01J37/32192 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/31691 ,  H01L28/56

摘要： A method for preparing an interfacial layer for a high-k dielectric layer on a substrate. A surface of said substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film. The oxide film is exposed to nitrogen radicals formed by plasma induced dissociation of a second process gas comprising at least one molecular composition comprising nitrogen to nitridate the oxide film to form the interfacial layer. A high-k dielectric layer is formed on said interfacial layer.

摘要翻译： 一种制备用于衬底上的高k电介质层的界面层的方法。 所述衬底的表面暴露于由紫外线（UV）辐射引起的包含至少一种包含氧的分子组合物的第一工艺气体的解离形成的氧自由基以形成氧化膜。 将氧化膜暴露于通过包含至少一种包含氮的分子组合物的第二工艺气体的等离子体诱导解离而形成的氮自由基以氮化氧化物膜以形成界面层。 在所述界面层上形成高k电介质层。

公开(公告)号：US20070065593A1

公开(公告)日：2007-03-22

申请号：US11231336

申请日：2005-09-21

申请人： Cory Wajda ,  David O'Meara ,  Masanobu Igeta

发明人： Cory Wajda ,  David O'Meara ,  Masanobu Igeta

IPC分类号： B05D3/00 ,  H05H1/24

CPC分类号： H01L21/02238 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3144 ,  H01L21/31654

摘要： A method for preparing an oxide film on a substrate. A surface of a substrate is oxidized to form an oxide film. The surface is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation and plasma induced dissociation of a process gas comprising at least one molecular composition comprising oxygen.

摘要翻译： 一种在基板上制备氧化膜的方法。 将基板的表面氧化形成氧化膜。 该表面暴露于由紫外线（UV）辐射诱导的解离形成的氧自由基和等离子体诱导的包含至少一种包含氧的分子组合物的工艺气体的解离。

公开(公告)号：US07754293B2

公开(公告)日：2010-07-13

申请号：US11454095

申请日：2006-06-16

申请人： Shintaro Aoyama ,  Masanobu Igeta ,  Kazuyoshi Yamazaki

发明人： Shintaro Aoyama ,  Masanobu Igeta ,  Kazuyoshi Yamazaki

IPC分类号： B05D3/00 ,  C08J7/18 ,  G21H5/00 ,  G21H1/00 ,  B01J19/08 ,  B29C71/02 ,  B29C71/04 ,  C04B41/00 ,  H01F41/00

CPC分类号： H01L21/67109 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/31662 ,  H01L21/67155

摘要： A film forming method for forming an oxide film on a surface of a substrate to be processed in a processing vessel at a predetermined processing temperature, wherein the method includes a temperature elevating step of elevating a temperature of said substrate to a predetermined processing temperature, the step of elevating the temperature including a step of holding the substrate in an atmosphere containing oxygen before the substrate reaches a temperature of 450° C. The film forming method further comprises, after the step of elevating the temperature, a film forming step of forming a radical oxide film by irradiating the substrate surface with energy capable of exciting an oxygen gas.

摘要翻译： 一种用于在预定处理温度下在处理容器中在待处理基板的表面上形成氧化膜的成膜方法，其中所述方法包括将所述基板的温度升高到预定处理温度的升温步骤， 提高温度的步骤，包括在基板达到450℃的温度之前将基板保持在含氧气氛中的步骤。成膜方法还包括在提升温度的步骤之后，形成 通过用能够激发氧气的能量照射衬底表面的自由基氧化物膜。

公开(公告)号：US07497964B2

公开(公告)日：2009-03-03

申请号：US11432332

申请日：2006-05-12

申请人： Masanobu Igeta ,  Kazuyoshi Yamazaki ,  Shintaro Aoyama ,  Hiroshi Shinriki

发明人： Masanobu Igeta ,  Kazuyoshi Yamazaki ,  Shintaro Aoyama ,  Hiroshi Shinriki

IPC分类号： B44C1/22 ,  C03C15/00

CPC分类号： H01J37/32009 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/31662

摘要： A method to solve such a problem that plasma will not ignite in restarting operation of a processing container that has not been operated with the inside kept drawn to vacuum. Gas containing oxygen is passed in a processing container 21, and ultraviolet light is irradiated to the gas while gas inside the processing container 21 is being discharged. After that, a remote plasma source 26 is driven to ignite plasma.

摘要翻译： 一种解决在没有被内部保持抽吸到真空中的处理容器的重新启动操作中等离子体不会点燃的问题的方法。 含有氧的气体通过处理容器21，在排出处理容器21内的气体的同时照射气体。 之后，驱动远程等离子体源26以点燃等离子体。

公开(公告)号：US20060009044A1

公开(公告)日：2006-01-12

申请号：US10527642

申请日：2003-09-19

申请人： Masanobu Igeta ,  Shintaro Aoyama ,  Hiroshi Shinriki

发明人： Masanobu Igeta ,  Shintaro Aoyama ,  Hiroshi Shinriki

IPC分类号： C23C16/00 ,  H01L21/31

CPC分类号： H01L21/02274 ,  H01L21/0228 ,  H01L21/3144 ,  H01L21/67017

摘要： A substrate-processing apparatus (100, 40) comprises a radical-forming unit (26) for forming the nitrogen radicals and oxygen radicals through a high-frequency plasma, a processing vessel (21) in which a substrate (W) to be processed is held, and a gas-supplying unit (30) which is connected to the radical-forming unit. The gas-supplying unit (30) controls the mixture ratio between a first raw material gas containing the nitrogen and a second raw material gas containing oxygen, and supplies a mixture gas of a desired mixture ratio to the radical-forming unit. By supplying the nitrogen radicals and oxygen radicals mixed at the controlled mixture ratio to the surface of the substrate, an insulating film having a desired nitrogen concentration is formed on the surface of the substrate.

摘要翻译： 基板处理装置（100,40）包括用于通过高频等离子体形成氮自由基和氧自由基的自由基形成单元（26），处理容器（21），其中待处理的基板（W） 和与自由基形成单元连接的气体供给单元（30）。 气体供给单元（30）控制含有氮的第一原料气体和含有氧的第二原料气体的混合比，并将所需混合比例的混合气体与自由基形成单元供给。 通过将以受控混合比混合的氮自由基和氧自由基提供给基板的表面，在基板的表面上形成具有所需氮浓度的绝缘膜。

公开(公告)号：US07378358B2

公开(公告)日：2008-05-27

申请号：US10527642

申请日：2003-09-19

申请人： Masanobu Igeta ,  Shintaro Aoyama ,  Hiroshi Shinriki

发明人： Masanobu Igeta ,  Shintaro Aoyama ,  Hiroshi Shinriki

IPC分类号： H01L21/469

CPC分类号： H01L21/02274 ,  H01L21/0228 ,  H01L21/3144 ,  H01L21/67017

摘要： A substrate-processing apparatus (100, 40) comprises a radical-forming unit (26) for forming the nitrogen radicals and oxygen radicals through a high-frequency plasma, a processing vessel (21) in which a substrate (W) to be processed is held, and a gas-supplying unit (30) which is connected to the radical-forming unit. The gas-supplying unit (30) controls the mixture ratio between a first raw material gas containing the nitrogen and a second raw material gas containing oxygen, and supplies a mixture gas of a desired mixture ratio to the radical-forming unit. By supplying the nitrogen radicals and oxygen radicals mixed at the controlled mixture ratio to the surface of the substrate, an insulating film having a desired nitrogen concentration is formed on the surface of the substrate.

摘要翻译： 基板处理装置（100,40）包括用于通过高频等离子体形成氮自由基和氧自由基的自由基形成单元（26），处理容器（21），其中待处理的基板（W） 和与自由基形成单元连接的气体供给单元（30）。 气体供给单元（30）控制含有氮的第一原料气体和含有氧的第二原料气体的混合比，并将所需混合比例的混合气体与自由基形成单元供给。 通过将以受控混合比混合的氮自由基和氧自由基提供给基板的表面，在基板的表面上形成具有所需氮浓度的绝缘膜。

公开(公告)号：US20050079720A1

公开(公告)日：2005-04-14

申请号：US10967284

申请日：2004-10-19

申请人： Shintaro Aoyama ,  Masanobu Igeta ,  Hiroshi Shinriki

发明人： Shintaro Aoyama ,  Masanobu Igeta ,  Hiroshi Shinriki

IPC分类号： H01L21/28 ,  H01L21/306 ,  H01L21/314 ,  H01L21/316 ,  H01L21/336 ,  H01L29/51 ,  H01L21/31 ,  H01L21/311 ,  H01L21/469

CPC分类号： H01L21/28194 ,  H01L21/02046 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/0231 ,  H01L21/02312 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31662 ,  H01L29/511 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  Y10S438/906

摘要： A substrate processing method includes the steps of removing carbon from a surface of a silicon substrate by irradiating an ultraviolet light on the surface in an essentially ultraviolet nonreactive gas atmosphere and forming an oxide film or an oxynitride film on the surface of the silicon substrate by irradiating an ultraviolet light thereon in an essentially ultraviolet reactive gas atmosphere. Further, a computer readable storage medium stores therein a program for controlling the substrate processing method.

摘要翻译： 基板处理方法包括以下步骤：通过在基本上为紫外线的非反应性气体气氛中在表面上照射紫外光从硅衬底的表面除去碳，并通过照射在硅衬底的表面上形成氧化膜或氧氮化物膜 在其上的基本上紫外反应气体气氛中的紫外光。 此外，计算机可读存储介质中存储有用于控制衬底处理方法的程序。