公开(公告)号：US5137363A

公开(公告)日：1992-08-11

申请号：US532229

申请日：1990-06-05

申请人： Masao Kosugi ,  Akiyoshi Suzuki ,  Hideki Ina ,  Hitoshi Fukuda

发明人： Masao Kosugi ,  Akiyoshi Suzuki ,  Hideki Ina ,  Hitoshi Fukuda

IPC分类号： G03F9/00

CPC分类号： G03F9/70

摘要： A projection exposure apparatus for projecting a pattern formed on a first object such as a reticle upon a second object such as a semiconductor wafer by use of a projection lens system, is disclosed. In the apparatus, a light of a predetermined wavelength is used for the pattern projection, and a light having a different wavelength is used to align the first and second objects by way of the projection lens system. A dichroic mirror film is disposed inclinedly between the first object and the projection lens system so as to reflect one of the light of the predetermined wavelength and the light of the different wavelength, and also to transmit the other. By this dichroic mirror film, the light used for the alignment and reflected back from the second object is extracted out of a light path between the first and second objects. After correcting effects of chromatic aberrations of the projection lens system with respect to the different wavelength, the light for the alignment is passed through the first object. By this, accurate alignment using the light of a wavelength different from that to be used for the pattern projection, is made practically attainable. Also, use of lights of different wavelengths, other than the wavelength to be used for the pattern projection, is made practically attainable. Thus, accurate and stable alignment is attainable regardless of the configuration of the mark provided on the second object.

摘要翻译： 公开了一种投影曝光装置，用于通过使用投影透镜系统将形成在第一物体（例如掩模版）上的图案投射到诸如半导体晶片的第二物体上的投影曝光装置。 在该装置中，对于图案投影使用预定波长的光，并且使用具有不同波长的光来通过投影透镜系统对准第一和第二物体。 二分色镜膜倾斜地设置在第一物体和投影透镜系统之间，以便反射预定波长的光和不同波长的光之一，并且还传送另一个。 通过这种二向色镜膜，从第二物体的对准和反射回来的光从第一和第二物体之间的光路中提取出来。 在校正投影透镜系统的色差相对于不同波长的效果之后，用于对准的光通过第一物体。 由此，实际上可以实现使用与用于图案投影的波长不同的波长的光的精确对准。 此外，实际上可以使用除了用于图案投影的波长之外的不同波长的光。 因此，无论设置在第二物体上的标记的构造如何，均可实现准确和稳定的对准。

公开(公告)号：US4888614A

公开(公告)日：1989-12-19

申请号：US333727

申请日：1989-04-03

申请人： Akiyoshi Suzuki ,  Hideki Ina ,  Masao Kosugi

发明人： Akiyoshi Suzuki ,  Hideki Ina ,  Masao Kosugi

IPC分类号： G03F9/00

CPC分类号： G03F9/70

摘要： An observation system, usable with a projection optical system for optically projecting a first object upon a second object by use of a light of a first wavelength, for observing the second object by way of the projection optical system and by use of a light of a second wavelength different from the first wavelength. The observation system includes an observation optical system having a lens element and a parallel-surface plate which is inclined with respect to an optical axis of the observation optical system, wherein the observation optical system is arranged to form an image of the second object on a predetermined image surface and wherein the parallel-surface plate is arranged to substantially correct coma caused by the projection optical system.

摘要翻译： 一种观察系统，可用于投影光学系统，用于通过使用第一波长的光将第一物体光学投射到第二物体上，用于通过投影光学系统观察第二物体，并且通过使用 第二波长不同于第一波长。 观察系统包括具有透镜元件和相对于观察光学系统的光轴倾斜的平行面板的观察光学系统，其中观察光学系统被布置成在第一对象的形状上形成第二物体的图像 预定的图像表面，并且其中平行表面板被布置成基本上校正由投影光学系统引起的彗差。

公开(公告)号：US5160957A

公开(公告)日：1992-11-03

申请号：US795252

申请日：1991-11-19

申请人： Hideki Ina ,  Masao Kosugi ,  Akiyoshi Suzuki

发明人： Hideki Ina ,  Masao Kosugi ,  Akiyoshi Suzuki

IPC分类号： G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  H01L21/67 ,  H01L21/68

CPC分类号： G03F9/70 ,  G03F7/2002

摘要： A mark detecting device usable in an alignment and exposure apparatus for aligning an alignment mark of a mask with an alignment mark of a wafer and for exposing a resist layer provided on the surface of the wafer to a pattern of the mask with radiation. The device including a portion for forming a photoprint of the alignment mark of the mask on the resist layer provided on the surface of the wafer, a portion for removing at least a portion of the resist layer adjacent to the alignment mark of the wafer, and a portion for detecting the alignment mark of the wafer and the photoprint of the alignment mark of the mask.

摘要翻译： 一种可用于对准和曝光装置的标记检测装置，用于将掩模的对准标记与晶片的对准标记对准，并且用于将设置在晶片表面上的抗蚀剂层暴露于具有辐射的掩模图案。 该装置包括用于在设置在晶片表面上的抗蚀剂层上形成掩模的对准标记的照相印刷部分，用于去除与晶片的对准标记相邻的抗蚀剂层的至少一部分的部分，以及 用于检测晶片的对准标记的部分和掩模的对准标记的照相印刷。

公开(公告)号：US4814829A

公开(公告)日：1989-03-21

申请号：US60398

申请日：1987-06-10

申请人： Masao Kosugi ,  Akiyoshi Suzuki ,  Hideki Ina ,  Kazuhito Outsuka ,  Shigeki Ogawa ,  Masao Totsuka ,  Fumio Sakai

发明人： Masao Kosugi ,  Akiyoshi Suzuki ,  Hideki Ina ,  Kazuhito Outsuka ,  Shigeki Ogawa ,  Masao Totsuka ,  Fumio Sakai

IPC分类号： G03F9/00 ,  G03B27/52 ,  G03B27/70

CPC分类号： G03F9/7069 ,  G03F9/7023

摘要： A projection exposure apparatus for projecting a pattern of a reticle upon a wafer by use of a projection lens system, is disclosed. The apparatus is arranged so that a mark illuminating light is projected upon the wafer from between the projection lens system and the wafer and not by way of the projection lens system. The light diffracted by an edge of a wafer alignment mark is photoelectrically detected by way of the projection lens system, whereby an electrical signal corresponding to an image of the alignment mark is obtained. On the basis of the detected signal, the wafer is aligned with the reticle. This arrangement allows detection of the alignment mark without being affected by a photoresist applied to the wafer surface. Thus, the reticle-to-wafer alignment can be made accurately. Also, a novel and unique alignment method is disclosed. The disclosed method assures high-accuracy reticle-to-wafer alignment.

摘要翻译： 公开了一种用于通过使用投影透镜系统将掩模版图案投影到晶片上的投影曝光装置。 该装置被布置成使得标记照明光从投影透镜系统和晶片之间而不是通过投影透镜系统投射到晶片上。 通过投影透镜系统对由晶片对准标记的边缘衍射的光进行光电检测，从而获得与对准标记的图像对应的电信号。 基于检测到的信号，晶片与掩模版对准。 这种布置允许检测对准标记而不受施加到晶片表面的光致抗蚀剂的影响。 因此，可以准确地进行标线片到晶片对准。 此外，公开了一种新颖且独特的对准方法。 所公开的方法确保了高精度的光罩对晶片对准。

公开(公告)号：US4521082A

公开(公告)日：1985-06-04

申请号：US401895

申请日：1982-07-26

申请人： Akiyoshi Suzuki ,  Hirosi Sato ,  Takashi Omata ,  Masao Kosugi

发明人： Akiyoshi Suzuki ,  Hirosi Sato ,  Takashi Omata ,  Masao Kosugi

IPC分类号： G03B27/32 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  G02F1/01

CPC分类号： G03F9/7065 ,  G03F7/20 ,  G03F7/70241 ,  G03F7/70875 ,  G03F9/00

摘要： An exposure apparatus includes a reticle provided with at least one mark, and operates on a wafer provided with at least one mark. The apparatus further includes a projection optical system for optically conjugately relating the reticle to the wafer, a mark detecting apparatus for detecting the mark of the reticle and detecting the mark of the wafer through the projection optical system, an illuminator for illuminating the wafer with a sensitizing light, and a phase converting element fixed between the wafer and the reticle for varying the direction of polarization of a light coming from the mark provided on the wafer.

摘要翻译： 曝光装置包括设置有至少一个标记的掩模版，并且在设置有至少一个标记的晶片上操作。 该装置还包括用于将掩模版光学共轭地连接到晶片的投影光学系统，用于检测标线的标记并通过投影光学系统检测晶片的标记的标记检测装置，用于通过投影光学系统照亮晶片的照明器 以及固定在晶片和掩模版之间的相变元件，用于改变来自设置在晶片上的标记的光的偏振方向。

公开(公告)号：US4883359A

公开(公告)日：1989-11-28

申请号：US186773

申请日：1988-04-25

申请人： Hideki Ina ,  Akiyoshi Suzuki

发明人： Hideki Ina ,  Akiyoshi Suzuki

IPC分类号： G03F9/00

CPC分类号： G03F9/7076 ,  G03F9/00

摘要： An alignment method and a pattern forming method using the same, wherein a substrate onto which a complete pattern is to be transferred is held by a holder having formed thereon at least two alignment marks disposed in a predetermined positional relation with each other. Separate masks having relatively complementing pattern segments are used. Each of the masks is aligned with corresponding portion of the holder through an associated one of the alignment marks. As the result, the pattern segments transferred onto the substrate is aligned with each other and the continuity of the pattern is assured on the substrate. Also provided is an alignment mark forming method and a pattern forming method using the same, wherein the region on a substrate in which a continuous pattern is to be formed is divided into at least two sections and alignment marks for these sections are simultaneously formed on the substrate by means of one single mask, so that the segments of the pattern which are first to be transferred onto the sections of the substrate can be aligned with each other when they are transferred onto the substrate.

摘要翻译： 使用该方法的定位方法和图案形成方法，其中，要在其上形成完整图案的基板由其上形成有至少两个彼此以预定位置关系的对准标记的保持器保持。 使用具有相对互补图案片段的分离掩模。 每个掩模通过相关联的一个对准标记与保持器的相应部分对齐。 结果，转移到衬底上的图案片段彼此对准，并且在衬底上确保图案的连续性。 还提供了一种对准标记形成方法和使用其的图案形成方法，其中将要形成连续图案的基板上的区域划分为至少两个部分，并且在这些部分上同时形成用于这些部分的对准标记 通过一个单一的掩模进行衬底，使得当衬底转移到衬底上时，首先要转移到衬底的部分上的图案的段可以彼此对准。

公开(公告)号：US4830499A

公开(公告)日：1989-05-16

申请号：US94086

申请日：1987-09-04

申请人： Michio Kohno ,  Hideki Ina ,  Akiyoshi Suzuki

发明人： Michio Kohno ,  Hideki Ina ,  Akiyoshi Suzuki

IPC分类号： G03B27/32 ,  G01B11/00 ,  G02B17/02 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F9/70 ,  G02B17/02 ,  H01L21/30

摘要： An optical device includes an objective lens, a relay lens group for relaying the beam from the objective lens, and a compensator for compensating the variation in the optical path length, which occurs when the relative position between said objective lens and said relay lens group changes, by expanding or contracting the optical path.

摘要翻译： 光学装置包括物镜，用于中继来自物镜的光束的中继透镜组以及用于补偿光路长度变化的补偿器，当所述物镜和所述中继透镜组之间的相对位置发生变化时 ，通过扩大或缩小光路。

公开(公告)号：US4641035A

公开(公告)日：1987-02-03

申请号：US642760

申请日：1984-08-21

申请人： Akiyoshi Suzuki ,  Hideki Ina

发明人： Akiyoshi Suzuki ,  Hideki Ina

IPC分类号： G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  G01N21/86 ,  G01V9/04

CPC分类号： G03F9/70 ,  H01L21/30

摘要： An apparatus and method for position detection for an object having a detection pattern formed by a concavity or convexity. The position detecting apparatus includes a scanning system for scanning the object with a light beam, a photoelectric transducer for receiving the information light reflected from the detection pattern to produce an electric signal, and a processing unit for computing, on the basis of the electric signal, the position of the detection pattern. Unwanted components included in the information light are prevented from being received by the photoelectric transducer, or electric signals corresponding to the unwanted components are excluded, so that the accuracy of signal processing and the accuracy of position detection are improved.

摘要翻译： 一种用于具有通过凹凸形成的检测图案的物体的位置检测的装置和方法。 该位置检测装置包括用光束扫描物体的扫描系统，用于接收从检测图案反射的信息光以产生电信号的光电传感器，以及用于根据电信号计算的处理单元 ，检测模式的位置。 信息光中包含的不需要的组件被光电传感器阻止，或排除与不需要的部件相对应的电信号，从而提高了信号处理的精度和位置检测的精度。

公开(公告)号：US5262822A

公开(公告)日：1993-11-16

申请号：US956474

申请日：1992-10-02

申请人： Masao Kosugi ,  Akiyoshi Suzuki

发明人： Masao Kosugi ,  Akiyoshi Suzuki

IPC分类号： G03F9/00 ,  G03B27/42

CPC分类号： G03F7/70633 ,  G03F9/7076

摘要： An exposure method and apparatus for aligning a pattern of a mask with a pattern of a wafer is disclosed. and for transferring the pattern of the mask onto a resist layer formed on the surface of the wafer, wherein a portion of the resist layer on the wafer in the vicinity of an alignment mark formed on the wafer is exposed to light passed through a portion of the mask including an alignment mark formed on the mask, thereby to form a latent image of the alignment mark of the mask on the resist layer of the wafer, the latent image of the alignment mark of the mask formed on the resist layer of the wafer. The alignment mark formed on the wafer is detected so as to detect any positional deviation between the latent image and the alignment mark formed on the wafer. At least one of the mask and the wafer is displaced on the basis of the result of detection, and finally the resist layer of the wafer is exposed to light passed through a portion of the mask including the pattern.

摘要翻译： 一种用于将掩模图案与晶片图案对准的曝光方法和装置。 并且为了将掩模的图案转印到形成在晶片表面上的抗蚀剂层，公开了在晶片上形成的对准标记附近的晶片上的抗蚀剂层的一部分暴露于通过 掩模的部分包括形成在掩模上的对准标记，从而在晶片的抗蚀剂层上形成掩模的对准标记的潜像，形成在抗蚀剂层上的掩模的对准标记的潜像 晶圆。 检测形成在晶片上的对准标记，以便检测潜像与在晶片的抗蚀剂层上形成的对准标记之间的任何位置偏差。 基于检测结果，掩模和晶片中的至少一个被移位，最后将晶片的抗蚀剂层暴露于通过包括图案的掩模的一部分的光。

公开(公告)号：US5309197A

公开(公告)日：1994-05-03

申请号：US868705

申请日：1992-04-15

申请人： Tetsuya Mori ,  Akiyoshi Suzuki ,  Hideki Ina

发明人： Tetsuya Mori ,  Akiyoshi Suzuki ,  Hideki Ina

IPC分类号： G03F7/20 ,  G03F7/22 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  G03B27/42

CPC分类号： G03F9/7088 ,  G03F9/00

摘要： A projection exposure apparatus includes a projection lens system for projecting an image of a pattern of an original on a substrate having a photosensitive layer, by using a sensitizing beam; a first detection optical system for detecting a mark of the substrate through the projection lens system and with a first non-sensitizing beam, the first detection optical system producing first information related to the position of the mark; a second detection optical system for detecting the mark of the substrate without the projection lens system and with a second nonsensitizing beam having a bandwidth broader than that of the first non-sensitizing beam, the second detection optical system producing second information related to the position of the mark; and a detector for detecting an error included in the first information, by using the first and second information.

摘要翻译： 投影曝光装置包括：投影透镜系统，用于通过使用敏化光束将原稿的图案的图像投影在具有感光层的基板上; 第一检测光学系统，用于通过投影透镜系统和第一非感光束检测基板的标记，第一检测光学系统产生与标记的位置相关的第一信息; 第二检测光学系统，用于在没有投影透镜系统的情况下检测基板的标记，并且具有比第一非敏感光束宽的带宽的第二非敏感光束，第二检测光学系统产生与位置相关的第二信息 标记; 以及用于通过使用第一和第二信息来检测包括在第一信息中的错误的检测器。