公开(公告)号：US4888614A

公开(公告)日：1989-12-19

申请号：US333727

申请日：1989-04-03

申请人： Akiyoshi Suzuki ,  Hideki Ina ,  Masao Kosugi

发明人： Akiyoshi Suzuki ,  Hideki Ina ,  Masao Kosugi

IPC分类号： G03F9/00

CPC分类号： G03F9/70

摘要： An observation system, usable with a projection optical system for optically projecting a first object upon a second object by use of a light of a first wavelength, for observing the second object by way of the projection optical system and by use of a light of a second wavelength different from the first wavelength. The observation system includes an observation optical system having a lens element and a parallel-surface plate which is inclined with respect to an optical axis of the observation optical system, wherein the observation optical system is arranged to form an image of the second object on a predetermined image surface and wherein the parallel-surface plate is arranged to substantially correct coma caused by the projection optical system.

摘要翻译： 一种观察系统，可用于投影光学系统，用于通过使用第一波长的光将第一物体光学投射到第二物体上，用于通过投影光学系统观察第二物体，并且通过使用 第二波长不同于第一波长。 观察系统包括具有透镜元件和相对于观察光学系统的光轴倾斜的平行面板的观察光学系统，其中观察光学系统被布置成在第一对象的形状上形成第二物体的图像 预定的图像表面，并且其中平行表面板被布置成基本上校正由投影光学系统引起的彗差。

公开(公告)号：US5137363A

公开(公告)日：1992-08-11

申请号：US532229

申请日：1990-06-05

申请人： Masao Kosugi ,  Akiyoshi Suzuki ,  Hideki Ina ,  Hitoshi Fukuda

发明人： Masao Kosugi ,  Akiyoshi Suzuki ,  Hideki Ina ,  Hitoshi Fukuda

IPC分类号： G03F9/00

CPC分类号： G03F9/70

摘要： A projection exposure apparatus for projecting a pattern formed on a first object such as a reticle upon a second object such as a semiconductor wafer by use of a projection lens system, is disclosed. In the apparatus, a light of a predetermined wavelength is used for the pattern projection, and a light having a different wavelength is used to align the first and second objects by way of the projection lens system. A dichroic mirror film is disposed inclinedly between the first object and the projection lens system so as to reflect one of the light of the predetermined wavelength and the light of the different wavelength, and also to transmit the other. By this dichroic mirror film, the light used for the alignment and reflected back from the second object is extracted out of a light path between the first and second objects. After correcting effects of chromatic aberrations of the projection lens system with respect to the different wavelength, the light for the alignment is passed through the first object. By this, accurate alignment using the light of a wavelength different from that to be used for the pattern projection, is made practically attainable. Also, use of lights of different wavelengths, other than the wavelength to be used for the pattern projection, is made practically attainable. Thus, accurate and stable alignment is attainable regardless of the configuration of the mark provided on the second object.

摘要翻译： 公开了一种投影曝光装置，用于通过使用投影透镜系统将形成在第一物体（例如掩模版）上的图案投射到诸如半导体晶片的第二物体上的投影曝光装置。 在该装置中，对于图案投影使用预定波长的光，并且使用具有不同波长的光来通过投影透镜系统对准第一和第二物体。 二分色镜膜倾斜地设置在第一物体和投影透镜系统之间，以便反射预定波长的光和不同波长的光之一，并且还传送另一个。 通过这种二向色镜膜，从第二物体的对准和反射回来的光从第一和第二物体之间的光路中提取出来。 在校正投影透镜系统的色差相对于不同波长的效果之后，用于对准的光通过第一物体。 由此，实际上可以实现使用与用于图案投影的波长不同的波长的光的精确对准。 此外，实际上可以使用除了用于图案投影的波长之外的不同波长的光。 因此，无论设置在第二物体上的标记的构造如何，均可实现准确和稳定的对准。

公开(公告)号：US5160957A

公开(公告)日：1992-11-03

申请号：US795252

申请日：1991-11-19

申请人： Hideki Ina ,  Masao Kosugi ,  Akiyoshi Suzuki

发明人： Hideki Ina ,  Masao Kosugi ,  Akiyoshi Suzuki

IPC分类号： G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  H01L21/67 ,  H01L21/68

CPC分类号： G03F9/70 ,  G03F7/2002

摘要： A mark detecting device usable in an alignment and exposure apparatus for aligning an alignment mark of a mask with an alignment mark of a wafer and for exposing a resist layer provided on the surface of the wafer to a pattern of the mask with radiation. The device including a portion for forming a photoprint of the alignment mark of the mask on the resist layer provided on the surface of the wafer, a portion for removing at least a portion of the resist layer adjacent to the alignment mark of the wafer, and a portion for detecting the alignment mark of the wafer and the photoprint of the alignment mark of the mask.

摘要翻译： 一种可用于对准和曝光装置的标记检测装置，用于将掩模的对准标记与晶片的对准标记对准，并且用于将设置在晶片表面上的抗蚀剂层暴露于具有辐射的掩模图案。 该装置包括用于在设置在晶片表面上的抗蚀剂层上形成掩模的对准标记的照相印刷部分，用于去除与晶片的对准标记相邻的抗蚀剂层的至少一部分的部分，以及 用于检测晶片的对准标记的部分和掩模的对准标记的照相印刷。

公开(公告)号：US4814829A

公开(公告)日：1989-03-21

申请号：US60398

申请日：1987-06-10

申请人： Masao Kosugi ,  Akiyoshi Suzuki ,  Hideki Ina ,  Kazuhito Outsuka ,  Shigeki Ogawa ,  Masao Totsuka ,  Fumio Sakai

发明人： Masao Kosugi ,  Akiyoshi Suzuki ,  Hideki Ina ,  Kazuhito Outsuka ,  Shigeki Ogawa ,  Masao Totsuka ,  Fumio Sakai

IPC分类号： G03F9/00 ,  G03B27/52 ,  G03B27/70

CPC分类号： G03F9/7069 ,  G03F9/7023

摘要： A projection exposure apparatus for projecting a pattern of a reticle upon a wafer by use of a projection lens system, is disclosed. The apparatus is arranged so that a mark illuminating light is projected upon the wafer from between the projection lens system and the wafer and not by way of the projection lens system. The light diffracted by an edge of a wafer alignment mark is photoelectrically detected by way of the projection lens system, whereby an electrical signal corresponding to an image of the alignment mark is obtained. On the basis of the detected signal, the wafer is aligned with the reticle. This arrangement allows detection of the alignment mark without being affected by a photoresist applied to the wafer surface. Thus, the reticle-to-wafer alignment can be made accurately. Also, a novel and unique alignment method is disclosed. The disclosed method assures high-accuracy reticle-to-wafer alignment.

摘要翻译： 公开了一种用于通过使用投影透镜系统将掩模版图案投影到晶片上的投影曝光装置。 该装置被布置成使得标记照明光从投影透镜系统和晶片之间而不是通过投影透镜系统投射到晶片上。 通过投影透镜系统对由晶片对准标记的边缘衍射的光进行光电检测，从而获得与对准标记的图像对应的电信号。 基于检测到的信号，晶片与掩模版对准。 这种布置允许检测对准标记而不受施加到晶片表面的光致抗蚀剂的影响。 因此，可以准确地进行标线片到晶片对准。 此外，公开了一种新颖且独特的对准方法。 所公开的方法确保了高精度的光罩对晶片对准。

公开(公告)号：US5262822A

公开(公告)日：1993-11-16

申请号：US956474

申请日：1992-10-02

申请人： Masao Kosugi ,  Akiyoshi Suzuki

发明人： Masao Kosugi ,  Akiyoshi Suzuki

IPC分类号： G03F9/00 ,  G03B27/42

CPC分类号： G03F7/70633 ,  G03F9/7076

摘要： An exposure method and apparatus for aligning a pattern of a mask with a pattern of a wafer is disclosed. and for transferring the pattern of the mask onto a resist layer formed on the surface of the wafer, wherein a portion of the resist layer on the wafer in the vicinity of an alignment mark formed on the wafer is exposed to light passed through a portion of the mask including an alignment mark formed on the mask, thereby to form a latent image of the alignment mark of the mask on the resist layer of the wafer, the latent image of the alignment mark of the mask formed on the resist layer of the wafer. The alignment mark formed on the wafer is detected so as to detect any positional deviation between the latent image and the alignment mark formed on the wafer. At least one of the mask and the wafer is displaced on the basis of the result of detection, and finally the resist layer of the wafer is exposed to light passed through a portion of the mask including the pattern.

摘要翻译： 一种用于将掩模图案与晶片图案对准的曝光方法和装置。 并且为了将掩模的图案转印到形成在晶片表面上的抗蚀剂层，公开了在晶片上形成的对准标记附近的晶片上的抗蚀剂层的一部分暴露于通过 掩模的部分包括形成在掩模上的对准标记，从而在晶片的抗蚀剂层上形成掩模的对准标记的潜像，形成在抗蚀剂层上的掩模的对准标记的潜像 晶圆。 检测形成在晶片上的对准标记，以便检测潜像与在晶片的抗蚀剂层上形成的对准标记之间的任何位置偏差。 基于检测结果，掩模和晶片中的至少一个被移位，最后将晶片的抗蚀剂层暴露于通过包括图案的掩模的一部分的光。

公开(公告)号：US4521082A

公开(公告)日：1985-06-04

申请号：US401895

申请日：1982-07-26

申请人： Akiyoshi Suzuki ,  Hirosi Sato ,  Takashi Omata ,  Masao Kosugi

发明人： Akiyoshi Suzuki ,  Hirosi Sato ,  Takashi Omata ,  Masao Kosugi

IPC分类号： G03B27/32 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  G02F1/01

CPC分类号： G03F9/7065 ,  G03F7/20 ,  G03F7/70241 ,  G03F7/70875 ,  G03F9/00

摘要： An exposure apparatus includes a reticle provided with at least one mark, and operates on a wafer provided with at least one mark. The apparatus further includes a projection optical system for optically conjugately relating the reticle to the wafer, a mark detecting apparatus for detecting the mark of the reticle and detecting the mark of the wafer through the projection optical system, an illuminator for illuminating the wafer with a sensitizing light, and a phase converting element fixed between the wafer and the reticle for varying the direction of polarization of a light coming from the mark provided on the wafer.

摘要翻译： 曝光装置包括设置有至少一个标记的掩模版，并且在设置有至少一个标记的晶片上操作。 该装置还包括用于将掩模版光学共轭地连接到晶片的投影光学系统，用于检测标线的标记并通过投影光学系统检测晶片的标记的标记检测装置，用于通过投影光学系统照亮晶片的照明器 以及固定在晶片和掩模版之间的相变元件，用于改变来自设置在晶片上的标记的光的偏振方向。

公开(公告)号：US4937618A

公开(公告)日：1990-06-26

申请号：US368881

申请日：1989-06-20

申请人： Naoki Ayata ,  Mitsugu Yamamura ,  Bunei Hamasaki ,  Masao Kosugi ,  Kazuo Takahashi ,  Mitsuaki Seki

发明人： Naoki Ayata ,  Mitsugu Yamamura ,  Bunei Hamasaki ,  Masao Kosugi ,  Kazuo Takahashi ,  Mitsuaki Seki

IPC分类号： G03F7/20 ,  G03F9/00

CPC分类号： G03F9/7088 ,  G03F7/70058 ,  G03F7/70725 ,  G03F9/7023 ,  G03F9/7057

摘要： An alignment apparatus including a first off-axis alignment optical system having a magnification, and a second off-axis alignment optical system having a magnification higher than that of the first off-axis alignment optical system, wherein the apparatus is operable in a global alignment mode using the second off-axis alignment optical system. In another aspect, there is provided an alignment apparatus which includes a first off-axis alignment optical system having a magnification, a second off-axis alignment optical system having a magnification higher than that of the first off-axis alignment optical system, and a TTL alignment optical system, wherein the alignment apparatus is operable in a global alignment mode using the second off-axis alignment optical system and is operable in another global alignment mode using the TTL optical alignment system.

摘要翻译： 一种对准装置，包括具有倍率的第一离轴对准光学系统和具有高于第一离轴对准光学系统的倍率的第二离轴对准光学系统，其中该装置可以全局对准 模式使用第二离轴对准光学系统。 在另一方面，提供了一种对准装置，其包括具有倍率的第一离轴对准光学系统，具有比第一离轴对准光学系统的放大率高的倍率的第二离轴对准光学系统，以及 TTL对准光学系统，其中对准装置可以使用第二离轴对准光学系统以全局对准模式操作，并且可以使用TTL光学对准系统以另一全局对准模式操作。

公开(公告)号：US4843563A

公开(公告)日：1989-06-27

申请号：US237620

申请日：1988-08-24

申请人： Kazuo Takahashi ,  Masao Kosugi

发明人： Kazuo Takahashi ,  Masao Kosugi

IPC分类号： G03F9/00 ,  H01L21/30

CPC分类号： G03F9/70 ,  G03F9/00 ,  H01L21/30

摘要： An exposure apparatus usable in the manufacture of semiconductor devices, for transferring a pattern of a reticle onto each of discrete areas of a semiconductor wafer in a step-and-repeat manner. The apparatus has a laser interferometer for precisely measuring the amount of displacement of the wafer and a memory for storing positional errors of the shot areas, relative to respective target positions, established at the time of completion of the stepwise movements of the wafer. In accordance with the stored positional errors and with the result of measurement by the laser interferometer, the amount of stepwise movement of the wafer is corrected, whereby the accuracy of step-feed for the wafer is improved without decreasing the throughput. In another aspect, the exposure apparatus is provided with a TTL detection system for detecting the positional error of each of the shot areas relative to a target or reference shot area established at the time of completion of stepwise movement of the wafer. If a variation component of the positional error detected by way of the TTL detecting system is not less than a predetermined level, the positioning of the wafer is effected for each of the shot areas, by use of the TTL detecting system. If the variation component is less than the predetermined level, the positioning of the wafer or each shot area is effected on the basis of the measurement by the laser interferometer.

摘要翻译： 一种可用于制造半导体器件的曝光装置，用于以分步重复的方式将半导体晶片的图案转印到半导体晶片的离散区域中。 该装置具有用于精确测量晶片的位移量的激光干涉仪和用于存储在晶片的逐步移动完成时建立的相对于各个目标位置的拍摄区域的位置误差的存储器。 根据存储的位置误差和激光干涉仪的测量结果，校正晶片的逐步移动量，从而提高晶片的分步进给精度，而不降低生产量。 在另一方面，曝光装置设置有TTL检测系统，用于检测每个拍摄区域相对于在晶片的逐步移动完成时建立的目标或参考拍摄区域的位置误差。 如果通过TTL检测系统检测到的位置误差的变化分量不小于预定水平，则通过使用TTL检测系统对每个拍摄区域进行晶片的定位。 如果变化分量小于预定水平，则基于激光干涉仪的测量来实现晶片或每个照射区域的定位。

公开(公告)号：US4757355A

公开(公告)日：1988-07-12

申请号：US923856

申请日：1986-10-28

申请人： Kazuo Iizuka ,  Yukio Tokuda ,  Masao Kosugi

发明人： Kazuo Iizuka ,  Yukio Tokuda ,  Masao Kosugi

IPC分类号： G03B23/00 ,  G03F7/20 ,  G03B27/62

CPC分类号： G03F1/66 ,  G03B23/00 ,  G03F7/70741

摘要： A device for supplying masks to be used in a chamber having a wall, comprises an opening formed in the wall of the chamber, and a rotatable shelf disposed in the opening and for carrying thereon the masks. The rotatable shelf is coupled, by way of a rotational shaft, to a portion of the wall adjacent to the opening and the rotational shelf has a mask carrying portion which is rotationally movable, about the rotational shaft, through the opening to and from the inside of the chamber and from and to the outside of the chamber.

摘要翻译： 一种用于提供在具有壁的腔室中使用的掩模的装置，包括形成在腔室的壁中的开口以及设置在开口中并用于在其上承载掩模的可旋转搁架。 旋转架通过旋转轴连接到与开口相邻的壁的一部分，并且旋转架具有掩模承载部分，该面罩承载部分可围绕旋转轴旋转移动，穿过开口至内部 的室和从室的外部。

公开(公告)号：US4479711A

公开(公告)日：1984-10-30

申请号：US446366

申请日：1982-12-02

申请人： Masao Kosugi ,  Hiroshi Sato ,  Kazuo Takahashi ,  Ichiro Ishiyama ,  Shuichi Yabu

发明人： Masao Kosugi ,  Hiroshi Sato ,  Kazuo Takahashi ,  Ichiro Ishiyama ,  Shuichi Yabu

IPC分类号： G03F9/00 ,  G03B27/52

CPC分类号： G03F9/7076

摘要： In a mask aligner, the actual element pattern of a mask is transferred onto a resist applied to the surface of a wafer, while the alignment pattern of the mask is not transferred onto said resist. That is, the line width of the alignment pattern of the mask is a line width which is not transferred to the wafer. If the pattern of the mask is formed so that the line width of the alignment pattern is thin as compared with that of the actual element pattern, the exposure amount in the alignment pattern portion on the resist applied to the surface of the wafer becomes excessive due to the diffraction phenomenon and thus, the alignment pattern of the mask is not transferred onto the wafer.

摘要翻译： 在掩模对准器中，掩模的实际元件图案被转移到施加到晶片表面的抗蚀剂上，同时掩模的对准图案不被转印到所述抗蚀剂上。 也就是说，掩模的对准图案的线宽是不传送到晶片的线宽。 如果掩模的图案形成为使得对准图案的线宽与实际元件图案相比较薄，则施加到晶片表面的抗蚀剂上的对准图案部分中的曝光量变得过大 因此，掩模的对准图案不会转印到晶片上。