中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

26 records (took 0.015 seconds)

    Methods of forming capacitors
    1.
    发明授权
    Methods of forming capacitors 有权

    公开(公告)号：US09159780B2

    公开(公告)日：2015-10-13

    申请号：US14596429

    申请日：2015-01-14

    Applicant: Micron Technology, Inc.

    Inventor： Joseph Neil Greeley ,  Prashant Raghu ,  Niraj B. Rana

    IPC: H01L21/02 ,  H01L49/02 ,  H01L21/3213 ,  H01L27/108

    CPC classification number: H01L28/92 ,  H01L21/32133 ,  H01L27/108 ,  H01L27/10852 ,  H01L27/10861 ,  H01L28/90

    Abstract: A method of forming capacitors includes forming support material over a substrate. A first capacitor electrode is formed within individual openings in the support material. A first etching is conducted only partially into the support material using a liquid etching fluid to expose an elevationally outer portion of sidewalls of individual of the first capacitor electrodes. A second etching is conducted into the support material using a dry etching fluid to expose an elevationally inner portion of the sidewalls of the individual first capacitor electrodes. A capacitor dielectric is formed over the outer and inner portions of the sidewalls of the first capacitor electrodes. A second capacitor electrode is formed over the capacitor dielectric.

    Multi-Material Structures, Semiconductor Constructions and Methods of Forming Capacitors
    3.
    发明申请
    Multi-Material Structures, Semiconductor Constructions and Methods of Forming Capacitors 有权
    多材料结构，半导体结构和形成电容器的方法

    公开(公告)号：US20150054127A1

    公开(公告)日：2015-02-26

    申请号：US14501423

    申请日：2014-09-30

    Applicant: Micron Technology, Inc.

    Inventor： Joseph Neil Greeley ,  Duane M. Goodner ,  Vishwanath Bhat ,  Vassil N. Antonov ,  Prashant Raghu

    IPC: H01L49/02

    CPC classification number: H01L28/75 ,  B82Y30/00 ,  H01L27/10808 ,  H01L27/10852 ,  H01L28/65 ,  H01L28/90 ,  Y10S977/932 ,  Y10T428/265

    Abstract: Some embodiments include a method of forming a capacitor. An opening is formed through a silicon-containing mass to a base, and sidewalls of the opening are lined with protective material. A first capacitor electrode is formed within the opening and has sidewalls along the protective material. At least some of the silicon-containing mass is removed with an etch. The protective material protects the first capacitor electrode from being removed by the etch. A second capacitor electrode is formed along the sidewalls of the first capacitor electrode, and is spaced from the first capacitor electrode by capacitor dielectric. Some embodiments include multi-material structures having one or more of aluminum nitride, molybdenum nitride, niobium nitride, niobium oxide, silicon dioxide, tantalum nitride and tantalum oxide. Some embodiments include semiconductor constructions.

    Abstract translation: 一些实施例包括形成电容器的方法。 通过含硅物质向基底形成开口，并且开口的侧壁衬有保护材料。 第一电容器电极形成在开口内并具有保护材料的侧壁。 用蚀刻去除至少一些含硅物质。 保护材料保护第一电容器电极不被蚀刻除去。 沿着第一电容器电极的侧壁形成第二电容器电极，并且通过电容器电介质与第一电容器电极间隔开。 一些实施例包括具有氮化铝，氮化钼，氮化铌，氧化铌，二氧化硅，氮化钽和氧化钽中的一种或多种的多材料结构。 一些实施例包括半导体结构。

    Methods of Forming Capacitors
    6.
    发明申请
    Methods of Forming Capacitors 审中-公开

    公开(公告)号：US20160013263A1

    公开(公告)日：2016-01-14

    申请号：US14861831

    申请日：2015-09-22

    Applicant: Micron Technology, Inc.

    Inventor： Joseph Neil Greeley ,  Prashant Raghu ,  Niraj B. Rana

    IPC: H01L49/02 ,  H01L27/108 ,  H01L21/3213

    CPC classification number: H01L28/92 ,  H01L21/32133 ,  H01L27/108 ,  H01L27/10852 ,  H01L27/10861 ,  H01L28/90

    Abstract: A method of forming capacitors includes forming support material over a substrate. A first capacitor electrode is formed within individual openings in the support material. A first etching is conducted only partially into the support material using a liquid etching fluid to expose an elevationally outer portion of sidewalls of individual of the first capacitor electrodes. A second etching is conducted into the support material using a dry etching fluid to expose an elevationally inner portion of the sidewalls of the individual first capacitor electrodes. A capacitor dielectric is formed over the outer and inner portions of the sidewalls of the first capacitor electrodes. A second capacitor electrode is formed over the capacitor dielectric.

    Vapor-etch cyclic process
    8.
    发明授权
    Vapor-etch cyclic process 有权

    公开(公告)号：US10607851B2

    公开(公告)日：2020-03-31

    申请号：US15686526

    申请日：2017-08-25

    Applicant: Micron Technology, Inc.

    Inventor： Andrew L. Li ,  Prashant Raghu ,  Sanjeev Sapra ,  Rita J. Klein ,  Sanh D. Tang ,  Sourabh Dhir

    IPC: H01L21/00 ,  H01L21/311 ,  H01L21/02 ,  H01L27/108 ,  H01L21/66 ,  H01L21/67 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66

    Abstract: Various embodiments comprise methods of selectively etching oxides over nitrides in a vapor-etch cyclic process. In one embodiment, the method includes, in a first portion of the vapor-etch cyclic process, exposing a substrate having oxide features and nitride features formed thereon to selected etchants in a vapor-phase chamber; transferring the substrate to a post-etch heat treatment chamber; and heating the substrate to remove etchant reaction products from the substrate. In a second portion of the vapor-etch cyclic process, the method continues with transferring the substrate from the post-etch heat treatment chamber to the vapor-phase chamber; exposing the substrate to the selected etchants in the vapor-phase chamber; transferring the substrate to the post-etch heat treatment chamber; and heating the substrate to remove additional etchant reaction products from the substrate. Apparatuses for performing the method and additional methods are also disclosed.

Patent Agency Ranking