摘要:
A hard mask composition, a method of forming a pattern, and a semiconductor integrated circuit device, the hard mask composition including a solvent; and an aromatic ring-containing compound, the aromatic ring-containing compound including at least one of a moiety represented by the following Chemical Formula 1 and a moiety represented by the following Chemical Formula 2:
摘要:
A hard mask composition, a method of forming a pattern, and a semiconductor integrated circuit device, the hard mask composition including a solvent; and an aromatic ring-containing compound, the aromatic ring-containing compound including at least one of a moiety represented by the following Chemical Formula 1 and a moiety represented by the following Chemical Formula 2:
摘要:
Disclosed are a monomer for a hardmask composition represented by the Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern.
摘要:
A hardmask composition includes a monomer represented by the following Chemical Formula 1, a polymer including a moiety represented by the following Chemical Formula 2, a polymer including a moiety represented by the following Chemical Formula 3, or a combination thereof, and a solvent,
摘要:
Disclosed are a monomer for a hardmask composition represented by the Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern.
摘要:
Forming a dual damascene structure includes forming a first insulation layer and a second insulation layer, forming a resist mask, forming a via hole down to a lower end of the first insulation layer, forming a hardmask layer in the via hole and on the second insulation layer using a spin-coating method, forming a resist mask, forming a first trench hole down to a lower end of the second insulation layer, respectively removing a part of the hardmask layer in the via hole and a part of the hardmask layer on the second insulation layer, forming a second trench hole by removing a part of the first insulation layer between a top corner of the hardmask layer remaining in the via hole and a bottom corner of the first trench hole, removing the hardmask layer, and filling the via hole and the second trench hole with a conductive material.
摘要:
There is provided a circuit for preventing latch-up in a DC-DC. The circuit for preventing a latch-up phenomenon in a DC-DC converter, the DC-DC converter having a first and a second DC-DC converters coupled with each other in one chip for receiving an input voltage to generate a positive voltage and a negative voltage, respectively, in which a parasitic block with a PNP transistor and an NPN transistor causing a latch-up phenomenon is embedded, the circuit includes a first pathway for controlling an input current flowing to the first DC-DC converter from an input terminal receiving the input voltage in order that the PNP transistor is turned on and the NPN transistor is not turned on; and a second pathway for supplying the input current to the first DC-DC converter intactly at a timing that both the positive and negative voltages reach target voltages.