公开(公告)号：US06200433B1

公开(公告)日：2001-03-13

申请号：US09430998

申请日：1999-11-01

申请人： Peijun Ding ,  Rong Tao ,  Barry Chin ,  Dan Carl

发明人： Peijun Ding ,  Rong Tao ,  Barry Chin ,  Dan Carl

IPC分类号： C23C1442

CPC分类号： C23C14/046 ,  C23C14/358

摘要： The present invention generally provides a copper metallization method for depositing a conformal barrier layer and seed layer in a plasma chamber. The barrier layer and seed layer are preferably deposited in a plasma chamber having an inductive coil and a target comprising the material to be sputtered. One or more plasma gases having high molar masses relative to the target material are then introduced into the chamber to form a plasma. Preferably, the plasma gases are selected from xenon, krypton or a combination thereof.

摘要翻译： 本发明通常提供了一种用于在等离子体室中沉积保形阻挡层和种子层的铜金属化方法。 阻挡层和种子层优选沉积在具有感应线圈的等离子体室中，并且靶包括要溅射的材料。 然后将相对于靶材料具有高摩尔质量的一种或多种等离子气体引入室中以形成等离子体。 优选地，等离子体气体选自氙，氪或其组合。

公开(公告)号：US6136163A

公开(公告)日：2000-10-24

申请号：US263126

申请日：1999-03-05

申请人： Robin Cheung ,  Ashok Sinha ,  Avi Tepman ,  Dan Carl

发明人： Robin Cheung ,  Ashok Sinha ,  Avi Tepman ,  Dan Carl

IPC分类号： B65G49/07 ,  C25D7/12 ,  H01L21/00 ,  H01L21/02 ,  H01L21/288 ,  C25D17/00 ,  C25B9/00 ,  C25B15/00

CPC分类号： H01L21/6723 ,  C25D17/001 ,  H01L21/67098

摘要： The present invention generally provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, a rapid thermal anneal chamber disposed adjacent the loading station, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. One aspect of the invention provides a post electrochemical deposition treatment, such as a rapid thermal anneal treatment, for enhancing deposition results. Preferably, the electro-chemical deposition system includes a system controller adapted to control the electro-chemical deposition process and the components of the electro-chemical deposition system, including the rapid thermal anneal chamber disposed adjacent the loading station.

摘要翻译： 本发明通常提供一种电化学沉积系统，其被设计成具有可扩展以适应未来设计规则和间隙填充要求的柔性结构，并提供令人满意的吞吐量以满足其它处理系统的需求。 电化学沉积系统通常包括具有主机晶片传送机器人的主机，与主机连接设置的加载站，与加载站相邻设置的快速热退火室，与主机连接设置的一个或多个处理单元， 以及流体连接到所述一个或多个电处理单元的电解质供应。 本发明的一个方面提供了用于增强沉积结果的后电化学沉积处理，例如快速热退火处理。 优选地，电化学沉积系统包括适于控制电化学沉积过程和电化学沉积系统的部件的系统控制器，包括邻近加载站设置的快速热退火室。

公开(公告)号：US06635157B2

公开(公告)日：2003-10-21

申请号：US09867780

申请日：2001-05-29

申请人： Yezdi Dordi ,  Donald J. Olgado ,  Ratson Morad ,  Peter Hey ,  Mark Denome ,  Michael Sugarman ,  Mark Lloyd ,  Joseph Stevens ,  Dan Marohl ,  Ho Seon Shin ,  Eugene Ravinovich ,  Robin Cheung ,  Ashok K. Sinha ,  Avi Tepman ,  Dan Carl ,  George Birkmaier

发明人： Yezdi Dordi ,  Donald J. Olgado ,  Ratson Morad ,  Peter Hey ,  Mark Denome ,  Michael Sugarman ,  Mark Lloyd ,  Joseph Stevens ,  Dan Marohl ,  Ho Seon Shin ,  Eugene Ravinovich ,  Robin Cheung ,  Ashok K. Sinha ,  Avi Tepman ,  Dan Carl ,  George Birkmaier

IPC分类号： C25D1700

CPC分类号： H01L21/6723 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  C25D21/02 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/67126 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67745 ,  H01L21/68707 ,  H01L21/68721 ,  H01L21/68728 ,  H01L21/68742 ,  H05K3/241

摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

公开(公告)号：US5468687A

公开(公告)日：1995-11-21

申请号：US281399

申请日：1994-07-27

申请人： Dan Carl ,  David M. Dobuzinsky ,  Son V. Nguyen ,  Tue Nguyen

发明人： Dan Carl ,  David M. Dobuzinsky ,  Son V. Nguyen ,  Tue Nguyen

IPC分类号： C30B29/16 ,  H01B3/00 ,  H01B3/10 ,  H01L21/02 ,  H01L21/205 ,  H01L21/316 ,  H01L21/70

CPC分类号： H01L28/40

摘要： A method for low temperature annealing (oxidation) of high dielectric constant Ta.sub.2 O.sub.5 thin films uses an ozone enhanced plasma. The films produced are especially applicable to 64 and 256 Mbit DRAM applications. The ozone enhanced plasma annealing process for thin film Ta.sub.2 O.sub.5 reduces the processing temperature to 400.degree. C. and achieves comparable film quality, making the Ta.sub.2 O.sub.5 films more suitable for Ultra-Large Scale Integration (ULSI) applications (storage dielectric for 64 and 256 Megabit DRAMs with stack capacitor structures, etc.) or others that require low temperature processing. This low temperature process is extendable to other high dc and piezoelectric thin films which may have many other applications.

摘要翻译： 高介电常数Ta2O5薄膜的低温退火（氧化）方法使用臭氧增强等离子体。 所制作的电影特别适用于64和256 Mbit DRAM应用。 用于薄膜Ta2O5的臭氧增强等离子体退火工艺将处理温度降低到400℃，并实现了相当的膜质量，使得Ta2O5膜更适合于超大规模集成（ULSI）应用（64和256兆位DRAM的存储电介质 堆叠电容器结构等）或需要低温处理的其他。 这种低温工艺可扩展到可能具有许多其它应用的其它高直流和压电薄膜。

公开(公告)号：US20060246690A1

公开(公告)日：2006-11-02

申请号：US11476945

申请日：2006-06-27

申请人： Yezdi Dordi ,  Donald Olgado ,  Ratson Morad ,  Peter Hey ,  Mark Denome ,  Michael Sugarman ,  Mark Lloyd ,  Anna Lloyd ,  Joseph Stevens ,  Dan Marohl ,  Ho Shin ,  Eugene Ravinovich ,  Robin Cheung ,  Ashok Sinha ,  Avi Tepman ,  Dan Carl ,  George Birkmaier

发明人： Yezdi Dordi ,  Donald Olgado ,  Ratson Morad ,  Peter Hey ,  Mark Denome ,  Michael Sugarman ,  Mark Lloyd ,  Anna Lloyd ,  Joseph Stevens ,  Dan Marohl ,  Ho Shin ,  Eugene Ravinovich ,  Robin Cheung ,  Ashok Sinha ,  Avi Tepman ,  Dan Carl ,  George Birkmaier

IPC分类号： H01L21/20 ,  B05D3/00 ,  B05C13/00 ,  B05C13/02

CPC分类号： H01L21/6723 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  C25D21/02 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/67126 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67745 ,  H01L21/68707 ,  H01L21/68721 ,  H01L21/68728 ,  H01L21/68742 ,  H05K3/241

摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

公开(公告)号：US06258220B1

公开(公告)日：2001-07-10

申请号：US09289074

申请日：1999-04-08

申请人： Yezdi Dordi ,  Donald J. Olgado ,  Ratson Morad ,  Peter Hey ,  Mark Denome ,  Michael Sugarman ,  Mark Lloyd ,  Joseph Stevens ,  Dan Marohl ,  Ho Seon Shin ,  Eugene Ravinovich ,  Robin Cheung ,  Ashok K. Sinha ,  Avi Tepman ,  Dan Carl ,  George Birkmaier

发明人： Yezdi Dordi ,  Donald J. Olgado ,  Ratson Morad ,  Peter Hey ,  Mark Denome ,  Michael Sugarman ,  Mark Lloyd ,  Joseph Stevens ,  Dan Marohl ,  Ho Seon Shin ,  Eugene Ravinovich ,  Robin Cheung ,  Ashok K. Sinha ,  Avi Tepman ,  Dan Carl ,  George Birkmaier

IPC分类号： C25D1700

CPC分类号： H01L21/6723 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06 ,  C25D21/02 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/67126 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67745 ,  H01L21/68707 ,  H01L21/68721 ,  H01L21/68728 ,  H01L21/68742 ,  H05K3/241

摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

摘要翻译： 本发明提供了一种电化学沉积系统，其被设计成具有可扩展以适应未来设计和间隙填充要求的柔性结构，并提供令人满意的生产量以满足其它处理系统的需求。 电化学沉积系统通常包括具有主机晶片传送机器人的主机，与主机连接设置的加载站，与主机连接设置的一个或多个处理单元，以及流体连接到该主机的一个或多个 电加工电池。 优选地，电化学沉积系统包括设置在加载站和主机之间的旋转干燥（SRD）站，附接到装载站的快速热退火室，以及用于控制电化学沉积的系统控制器 工艺和电化学沉积系统的组件。