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    Cascaded low-noise wideband active phase shifter
    2.
    发明授权
    Cascaded low-noise wideband active phase shifter 有权

    公开(公告)号：US11979129B2

    公开(公告)日：2024-05-07

    申请号：US17648279

    申请日：2022-01-18

    Applicant: Raytheon Company

    Inventor： Steven M. Lardizabal

    IPC: H03H11/20 ,  H03H7/19 ,  H03K5/00

    CPC classification number: H03H11/20 ,  H03H7/19 ,  H03K2005/00286

    Abstract: Apparatus and associated methods relate to a low-noise wideband active phase shifter. The low-noise wideband active phase shifter includes first and second transconductance cells, a fixed LC series network and a tunable LC series network configured to form an all-pass lattice network. The first and second transconductance cells, each include a transistor, a feedback network, and a transistor biasing network. The transistor has an input terminal and an output terminal. The negative feedback network electrically couples the input and output terminals of the transistor. The biasing network provides input and output biasing of the transistor. The fixed LC series network connects between the first and the second transconductance cells. The tunable LC series network connects between the first and the second transconductance cells.

    Amplifier having a switchable current bias circuit
    8.
    发明授权
    Amplifier having a switchable current bias circuit 有权

    公开(公告)号：US10447208B2

    公开(公告)日：2019-10-15

    申请号：US15843922

    申请日：2017-12-15

    Applicant: Raytheon Company

    Inventor： John P. Bettencourt ,  Valery S. Kaper ,  Steven M. Lardizabal

    IPC: H03F3/04 ,  H03F1/02 ,  H03F3/193 ,  H03F1/30 ,  H03F1/22 ,  H03F3/345 ,  H01L29/20

    Abstract: A circuit having (A) a transistor; (B) a bias circuit for providing setting a bias current for the transistor, the bias current having a current level in accordance with a reference current fed to the bias circuit; and (C) a bias current level controller, comprising: (i) a plurality of switches, each one of the switches comprises: a MOS FET and a GaN FET connected in a cascode configuration; and (ii) current source circuitry, comprising a plurality of current sources, each one of the current sources being connected between a voltage source and a corresponding one of the plurality of switches, the current source circuit combining currents produced by the current source in response a binary control signal fed to a gate of the MOS FET, the combined current providing the reference current fed to the bias circuit.

    Flexible power converter architecture based on interposer and modular electronic units
    9.
    发明授权
    Flexible power converter architecture based on interposer and modular electronic units 有权

    公开(公告)号：US10340812B2

    公开(公告)日：2019-07-02

    申请号：US15703455

    申请日：2017-09-13

    Applicant: Raytheon Company

    Inventor： Boris S. Jacobson ,  Steven D. Bernstein ,  Steven M. Lardizabal ,  Jason Adams ,  Jeffrey R. Laroche

    IPC: H02M3/335 ,  H02M7/00 ,  H01F27/28 ,  H01F27/42 ,  H02M7/04 ,  H02M1/00

    Abstract: A modular high-power converter system includes an electronic power distribution unit configured to output an analog current (AC) voltage to a power bus, and at least one Transmit or Receive Integrated Microwave Module (T/RIMM) that includes a voltage converter unit and a transmitter and receiver (T/R) unit. The voltage converter unit includes at least one analog-to-digital converter (ADC) to convert the AC voltage into a direct current (DC) voltage having a first DC voltage level. The transmitter and receiver (T/R) unit includes a modular-based DC/DC converter to convert the DC voltage into a second DC voltage having a second voltage. The modular-based DC/DC converter includes a modular power converter unit configured to generate the second DC voltage. The modular converter unit is configured to be independently interchangeable with a different modular converter unit.

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