中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

16 records (took 0.018 seconds)

    SEMICONDUCTOR DEVICE
    2.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240178316A1

    公开(公告)日：2024-05-30

    申请号：US18431693

    申请日：2024-02-02

    Applicant: ROHM CO., LTD.

    Inventor： Kentaro NASU

    IPC: H01L29/78 ,  H01L21/265 ,  H01L21/266 ,  H01L29/06 ,  H01L29/08 ,  H01L29/16 ,  H01L29/417 ,  H01L29/66

    CPC classification number: H01L29/7813 ,  H01L21/26513 ,  H01L21/266 ,  H01L29/0696 ,  H01L29/0865 ,  H01L29/41741 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7805 ,  H01L29/1608

    Abstract: A semiconductor device includes a first conductivity type first semiconductor region formed in a region on the first main surface side in a chip, a second conductivity type second semiconductor region formed in a region on the second main surface side in the chip, a first groove structure including a first groove formed in the first main surface while passing through the first semiconductor region so as to partition the first semiconductor region into a first region and a second region as viewed in cross-section, a control insulating film that covers a wall surface of the first groove, and a control electrode embedded in the first groove while sandwiching the control insulating film so as to control a channel in the second semiconductor region, a first electrode electrically connected to the first semiconductor region in the first region, and a second groove structure including a second groove formed in the first main surface while passing through the first semiconductor region in the second region, and a second electrode embedded in the second groove so as to form a current path via the channel between the first electrode and the second electrode.

    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PACKAGE
    3.
    发明申请
    SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PACKAGE 有权

    公开(公告)号：US20230112583A1

    公开(公告)日：2023-04-13

    申请号：US18065997

    申请日：2022-12-14

    Applicant: ROHM CO., LTD.

    Inventor： Kentaro NASU ,  Kenji NISHIDA

    IPC: H01L27/088 ,  H01L23/522 ,  H01L27/02 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L27/06

    Abstract: A semiconductor device includes an enhancement-mode first p-channel MISFET, an enhancement-mode second p-channel MISFET, a drain conductor electrically and commonly connected to the first p-channel MISFET and the second p-channel MISFET, a first source conductor electrically connected to a source of the first p-channel MISFET, a second source conductor electrically connected to a source of the second p-channel MISFET, and a gate conductor electrically and commonly connected to a gate of the first p-channel MISFET and a gate of the second p-channel MISFET.

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220344466A1

    公开(公告)日：2022-10-27

    申请号：US17640241

    申请日：2020-09-25

    Applicant: ROHM CO., LTD.

    Inventor： Kentaro NASU ,  Takaaki YOSHIOKA

    IPC: H01L29/06 ,  H01L29/78 ,  H01L29/16 ,  H01L29/66

    Abstract: A semiconductor device includes a semiconductor chip having a main surface, a first conductivity type drift layer formed in a surface layer portion of the main surface, a trench gate structure formed in the main surface such as to be in contact with the drift layer, a second conductivity type channel region formed in the drift layer such as to cover a side wall of the trench gate structure, and first and second source/drain regions formed at intervals in a region along the side wall of the trench gate structure in the drift layer such as to oppose each other across the channel region.

    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    6.
    发明申请
    METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200176271A1

    公开(公告)日：2020-06-04

    申请号：US16684817

    申请日：2019-11-15

    Applicant: Rohm Co., Ltd.

    Inventor： Kentaro NASU ,  Kanako DEGUCHI

    IPC: H01L21/48 ,  H01L23/495 ,  H01L23/31 ,  H01L21/56

    Abstract: A method for manufacturing a semiconductor device includes preparing a lead frame, mounting a semiconductor element on an obverse face of the lead frame, forming a sealing resin covering the semiconductor element, forming a groove on a reverse face of the lead frame, and removing a portion of the lead frame and a portion of the sealing resin along a disposal region that is narrower than the groove and entirely overlaps with the groove. The preparing of the lead frame includes forming at least one recess located in the disposal region and having an end that is open in the thickness direction. The forming of the groove includes exposing the recess on a side of the reverse face of the lead frame. The removing is performed with reference to the recess.

    SEMICONDUCTOR DEVICE
    9.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240014108A1

    公开(公告)日：2024-01-11

    申请号：US18474796

    申请日：2023-09-26

    Applicant: ROHM CO., LTD.

    Inventor： Satoki TANIGUCHI ,  Kentaro NASU ,  Yoshiaki OCHI

    IPC: H01L23/495 ,  H01L23/31 ,  H01L29/866

    CPC classification number: H01L23/49562 ,  H01L23/49575 ,  H01L23/3107 ,  H01L29/866 ,  H01L2224/48137 ,  H01L24/48

    Abstract: A semiconductor device includes a first lead, a second lead spaced apart from the first lead in a first direction, a first semiconductor element on the first lead, a second semiconductor element on the second lead, and a sealing resin covering the first lead, the second lead, the first semiconductor element and the second semiconductor element. The first and second semiconductor elements respectively have first and second element side surfaces facing with each other in the first direction. The sealing resin has a first-direction middle plane equidistant from the first and the second element side surfaces in the first direction. The first lead includes a first main part, and the second lead includes a second main part. The first and the second main parts are spaced apart from each other with reference to the first-direction middle plane.

    SEMICONDUCTOR DEVICE
    10.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220140141A1

    公开(公告)日：2022-05-05

    申请号：US17428555

    申请日：2020-02-07

    Applicant: ROHM CO., LTD.

    Inventor： Kentaro NASU ,  Yasuhiro KONDO ,  Takaaki YOSHIOKA

    IPC: H01L29/78 ,  H01L29/16 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66

    Abstract: A semiconductor device includes a semiconductor layer that has a main surface, a trench gate structure that includes a trench formed in the main surface and having a first sidewall at one side, a second sidewall at the other side and a bottom wall in a cross-sectional view, an insulation layer formed on an inner wall of the trench, and a gate electrode embedded in the trench with the insulation layer between the trench and the gate electrode and having an upper end portion positioned at a bottom-wall side with respect to the main surface, a plurality of first-conductivity-type drift regions that are respectively formed in a region at the first sidewall side of the trench and in a region at the second sidewall side of the trench such as to face each other with the trench interposed therebetween in a surface layer portion of the main surface and that are positioned in a region at the main surface side with respect to the bottom wall, and a plurality of first-conductivity-type source/drain regions that are formed in surface layer portions of the plurality of drift regions, respectively.

Patent Agency Ranking