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    METHOD FOR MANUFACTURING NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE
    3.
    发明申请
    METHOD FOR MANUFACTURING NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    制造纳米结构半导体发光器件的方法

    公开(公告)号：US20150372186A1

    公开(公告)日：2015-12-24

    申请号：US14764349

    申请日：2014-01-28

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Nam-Goo CHA ,  Geon-Wook YOO ,  Han-kyu SEONG

    IPC: H01L33/00 ,  H01L33/08 ,  H01L33/24

    CPC classification number: H01L33/20 ,  H01L33/005 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24

    Abstract: There is provided a method of manufacturing a nanostructure semiconductor light emitting device including providing a base layer formed of a first conductivity-type semiconductor, forming a mask including an etch stop layer on the base layer, forming a plurality of openings with regions of the base layer exposed therethrough, in the mask; forming a plurality of nanocores by growth of the first conductivity-type semiconductor on the exposed regions of the base layer to fill the plurality of openings, partially removing the mask using the etch stop layer to expose side portions of the plurality of nanocores, and sequentially growth of an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores.

    Abstract translation: 提供一种制造纳米结构半导体发光器件的方法，包括提供由第一导电型半导体形成的基底层，在基底层上形成包括蚀刻停止层的掩模，形成多个具有基底区域的开口 在面罩中暴露于其中的层; 通过在基底层的暴露区域上生长第一导电类型半导体以填充多个开口而形成多个纳米孔，使用蚀刻停止层部分地去除掩模以暴露多个纳米孔的侧部，并依次 在多个纳米孔的表面上生长活性层和第二导电型半导体层。

    THREE-DIMENSIONAL LIGHT-EMITTING DEVICE AND FABRICATION METHOD THEREOF
    4.
    发明申请
    THREE-DIMENSIONAL LIGHT-EMITTING DEVICE AND FABRICATION METHOD THEREOF 有权
    三维发光器件及其制造方法

    公开(公告)号：US20150325745A1

    公开(公告)日：2015-11-12

    申请号：US14651974

    申请日：2013-12-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyung-wook HWANG ,  Han-kyu SEONG ,  Hun-jae CHUNG ,  Nam-goo CHA

    IPC: H01L33/24 ,  H01L27/15 ,  H01L33/62 ,  H01L33/42 ,  H01L33/00 ,  H01L33/06 ,  H01L33/40

    CPC classification number: H01L33/16 ,  H01L27/153 ,  H01L33/0054 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/405 ,  H01L33/42 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0066

    Abstract: A three-dimensional (3D) light-emitting device may include a plurality of 3D light-emitting structures formed apart from one another, each 3D light-emitting structure including: a semiconductor core vertically grown on one surface and doped in a first conductive type; an active layer formed so as to surround a surface of the semiconductor core; and a first semiconductor layer formed so as to surround a surface of the active layer and doped in a second conductive type. The 3D light-emitting device may include: a first porous insulating layer formed between lower corner portions of the 3D light-emitting structures so as to expose upper end portions of the 3D light-emitting structures; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the semiconductor core.

    Abstract translation: 三维（3D）发光装置可以包括彼此分开形成的多个3D发光结构，每个3D发光结构包括：在一个表面上垂直生长并以第一导电类型掺杂的半导体芯 ; 形成为包围半导体芯的表面的有源层; 以及形成为围绕有源层的表面并以第二导电类型掺杂的第一半导体层。 3D发光装置可以包括：形成在3D发光结构的下角部之间以暴露3D发光结构的上端部的第一多孔绝缘层; 电连接到第一半导体层的第一电极; 和与半导体芯电连接的第二电极。

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