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公开(公告)号：US20190148438A1
公开(公告)日：2019-05-16
申请号：US16045985
申请日：2018-07-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jae-kyu LEE , Young-chan KIM , Seung-sik KIM
IPC: H01L27/146 , H01L23/48
Abstract: An image sensor and an electronic apparatus, the image sensor including a plurality of pixels, each pixel of the plurality of pixels including a photodiode and a transfer transistor, a reset transistor, a source-follower transistor, and a selection transistor, which correspond to the photodiode; a plurality of first interconnection lines connected to gates of the transfer transistor, the reset transistor, and the selection transistor, the plurality of first interconnection lines extending in a first direction; and a plurality of second interconnection lines connected to a source region of the selection transistor, the plurality of second interconnection lines extending in a second direction that intersects the first direction, wherein the plurality of first interconnection lines or the plurality of second interconnection lines includes dummy lines on a peripheral area that is outside of a pixel area in which the pixels are located.
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公开(公告)号：US20220336507A1
公开(公告)日：2022-10-20
申请号：US17856022
申请日：2022-07-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Min-Woong SEO , JungChak AHN , Jae-kyu LEE
IPC: H01L27/146 , H04N5/335 , H01L27/108 , H04N5/355
Abstract: An image sensor device includes a digital pixel that includes a photo detector, a comparator, and a memory circuit, a pixel driver that controls the digital pixel, and a digital logic circuit that performs a digital signal processing operation on a digital signal output from the digital pixel. The photo detector and a first portion of the comparator are formed in a first semiconductor die, a second portion of the comparator, the memory circuit, and the pixel driver are formed in a second semiconductor die under the first semiconductor die, and the digital logic circuit is formed in a third semiconductor die under the second semiconductor die.
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3.发明申请IMAGE SCANNING APPARATUS AND METHOD TO CONTROL A LIGHT SOURCE THAT AN INTENSITY OF LIGHT IRRADIATED TO ANY ONE OF A PLURALITY OF LINES OF THE DOCUMENT FROM THE LIGHT SOURCE EQUAL TO AN INTENSITY OF LIGHT IRRADIATED TO ANOTHER LINE 审中-公开图像扫描装置和控制光源的方法，即将光源强度从光源等同于文献中的任何一个等同于相对于另一条线的光强度的强度公开(公告)号：US20140036322A1
公开(公告)日：2014-02-06
申请号：US14051808
申请日：2013-10-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jae-kyu LEE , Kyung-rok KIM
IPC: H04N1/024
CPC classification number: H04N1/024 , H04N1/40056 , H04N1/401
Abstract: The image scanning apparatus includes a light source including at least one light emitting diode (LED) to irradiate light to a document which is a scan target, a light source control unit to control a lighting-up point of time of the light source, an image sensor to transform an image formed by light reflected from the document into an electric signal according to a result of controlling the lighting-up point of time, and an output unit to output image data corresponding to the transformed electric signal.
Abstract translation: 图像扫描装置包括：光源，其包括至少一个用于将光照射到作为扫描对象的原稿的发光二极管（LED）;光源控制单元，用于控制光源的点亮时间点; 图像传感器，用于根据控制点亮时间点的结果将由文档反射的光形成的图像变换为电信号;以及输出单元，输出与变换后的电信号对应的图像数据。
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公开(公告)号：US20200258926A1
公开(公告)日：2020-08-13
申请号：US16591059
申请日：2019-10-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Min-Woong SEO , JungChak AHN , Jae-kyu LEE
IPC: H01L27/146 , H04N5/335 , H01L27/108 , H04N5/355
Abstract: An image sensor device includes a digital pixel that includes a photo detector, a comparator, and a memory circuit, a pixel driver that controls the digital pixel, and a digital logic circuit that performs a digital signal processing operation on a digital signal output from the digital pixel. The photo detector and a first portion of the comparator are formed in a first semiconductor die, a second portion of the comparator, the memory circuit, and the pixel driver are formed in a second semiconductor die under the first semiconductor die, and the digital logic circuit is formed in a third semiconductor die under the second semiconductor die.
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公开(公告)号：US20250126908A1
公开(公告)日：2025-04-17
申请号：US18999977
申请日：2024-12-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Min-Woong SEO , JungChak AHN , Jae-kyu LEE
Abstract: An image sensor device includes a digital pixel that includes a photo detector, a comparator, and a memory circuit, a pixel driver that controls the digital pixel, and a digital logic circuit that performs a digital signal processing operation on a digital signal output from the digital pixel. The photo detector and a first portion of the comparator are formed in a first semiconductor die, a second portion of the comparator, the memory circuit, and the pixel driver are formed in a second semiconductor die under the first semiconductor die, and the digital logic circuit is formed in a third semiconductor die under the second semiconductor die.
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Patent Agency Ranking
公开(公告)号：US20190362791A1
公开(公告)日：2019-11-28
申请号：US16533143
申请日：2019-08-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung-woo KIM , Jae-kyu LEE , Ki-seok SUH , Hyeong-sun HONG , Yoo-sang HWANG , Gwan-hyeob KOH
IPC: G11C14/00 , H01L27/22 , H01L27/108 , H01L27/24 , H01L45/00 , H01L43/12 , H01L43/02 , H01L43/08 , H01L29/423 , H01L23/528 , H01L29/08 , H01L27/105 , H01L27/02 , G11C11/00 , G11C7/10
Abstract: An integrated circuit (IC) device may include a single substrate that includes a single chip, and a plurality of memory cells spaced apart from one another on the substrate and having different structures. Manufacturing the IC device may include forming a plurality of first word lines in a first region of the substrate, and forming a plurality of second word lines in or on a second region of the substrate. Capacitors may be formed on the first word lines. Source lines may be formed on the second word lines. An insulation layer that covers the plurality of capacitors and the plurality of source lines may be formed in the first region and the second region. A variable resistance structure may be formed at a location spaced apart from an upper surface of the substrate by a first vertical distance, in the second region.
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公开(公告)号：US20170117042A1
公开(公告)日：2017-04-27
申请号：US15205498
申请日：2016-07-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jae-kyu LEE , Sung-in KIM
IPC: G11C13/00
CPC classification number: G11C13/0069 , G11C11/161 , G11C11/1655 , G11C11/1673 , G11C11/1675 , G11C13/0002 , G11C13/0026 , G11C13/0028 , G11C13/004 , G11C16/26 , G11C2013/0045 , G11C2013/0078 , G11C2213/79 , G11C2213/82 , H01L27/228
Abstract: A resistive memory device resistive memory device includes a bit line configured to be driven by a bit line driver, a source line configured to be driven by a source line driver adjacent to the bit line driver, and a plurality of memory cells connected between the bit line and the source line. An electrical path of the bit line from each of the plurality of memory cells to the bit line driver increases as an electrical path of the source line from each of the plurality of memory cells to the source line driver decreases.
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公开(公告)号：US20160043136A1
公开(公告)日：2016-02-11
申请号：US14677101
申请日：2015-04-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sung-in KIM , Jae-kyu LEE
IPC: H01L27/22 , H01L23/535
CPC classification number: H01L27/228 , H01L23/535 , H01L2924/0002 , H01L2924/00
Abstract: A magnetic memory device is provided. The magnetic memory device includes a substrate including a first source/drain region and a second source/drain region; a word line structure between the first and source/drain regions and extending in a first direction; a buried contact electrically connected to the first source/drain region and on the first source/drain region; a contact pad electrically connected to the buried contact and on the buried contact; and a memory portion electrically connected to the contact pad and on the contact pad, the contact pad including a metal silicide layer.
Abstract translation: 提供磁存储器件。 磁存储器件包括：衬底，包括第一源极/漏极区域和第二源极/漏极区域; 在第一和源极/漏极区之间并在第一方向上延伸的字线结构; 电连接到第一源极/漏极区域和第一源极/漏极区域的埋入触点; 接触垫，其电连接到所述埋入触点和所述埋入触点; 以及与所述接触焊盘和所述接触焊盘电连接的存储部分，所述接触焊盘包括金属硅化物层。
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公开(公告)号：US20150221699A1
公开(公告)日：2015-08-06
申请号：US14599064
申请日：2015-01-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jae-kyu LEE , Ki-Seok SUH
CPC classification number: H01L27/228 , G11C11/1659 , H01L43/02 , H01L43/08
Abstract: The magnetic memory device includes a plurality of source lines arranged in parallel in a second direction orthogonal to a first direction while extending in the first direction on a substrate, a plurality of word lines arranged in parallel in the first direction while extending in the second direction on the substrate, a plurality of bit lines arranged in parallel in the second direction while extending in the first direction on the substrate to alternate with the plurality of source lines, and a plurality of active regions arranged to extend at an oblique angle with respect to the first direction and arranged so that one memory cell is selected when one of the plurality of word lines and one of the plurality of source lines or the plurality of bit lines are selected.
Abstract translation: 磁存储器件包括沿与第一方向正交的第二方向平行布置的多条源极线，同时在衬底上沿第一方向延伸;多条字线，沿第一方向平行布置，同时沿第二方向延伸 在所述基板上，沿着所述第一方向在所述基板上沿所述第一方向延伸而与所述多个源极线交替的多个位线，所述多个位线在所述第二方向上平行布置，并且所述多个有源区域被布置成相对于 所述第一方向被布置成使得当所述多条字线中的一条字线和所述多条源极线或多条位线中的一条被选择时选择一个存储器单元。
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公开(公告)号：US20130234090A1
公开(公告)日：2013-09-12
申请号：US13684884
申请日：2012-11-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jae-kyu LEE , Seung-pil KO , Yong-jun KIM , Eun-jung KIM
IPC: H01L45/00
CPC classification number: H01L45/00 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/141 , H01L45/144 , H01L45/1675 , H01L45/1683
Abstract: A semiconductor device includes a first semiconductor layer extending in a first direction on a substrate, a plurality of second semiconductor layers spaced apart in the first direction on the first semiconductor layer, and an insulation layer structure surrounding side walls of the first semiconductor layer and the plurality of second semiconductor layers. The first semiconductor layer may have a first conductivity type, and the plurality of second semiconductor layers may have a second conductivity type.
Abstract translation: 半导体器件包括在衬底上沿第一方向延伸的第一半导体层，在第一半导体层上沿第一方向隔开的多个第二半导体层和围绕第一半导体层的侧壁的绝缘层结构， 多个第二半导体层。 第一半导体层可以具有第一导电类型，并且多个第二半导体层可以具有第二导电类型。
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