公开(公告)号：US20230063639A1

公开(公告)日：2023-03-02

申请号：US17898459

申请日：2022-08-29

Applicant: SEMES CO., LTD.

Inventor： Gyeong Won SONG ,  Jae Seong LEE ,  Chun Woo PARK

IPC: B05D3/02

Abstract: Provided is a heat treatment unit, including: a chamber providing a substrate processing apparatus including: a process chamber in which an upper chamber and a lower chamber are in contact with each other to form a treatment space defined by the upper chamber and the lower chamber; a heating plate positioned in the treatment space to heat a substrate; a lift pin for placing the substrate on the heating plate or for moving the substrate placed on the heating plate to be spaced apart from the heating plate; a driving member connected to the upper chamber or the lower chamber to vertically drive the upper chamber or the lower chamber; an exhaust member connected to a central region of the upper chamber to exhaust the treatment space; and an airflow blocking member provided on an upper surface of the heating plate and formed to surround an edge of the substrate so as to block a surrounding airflow from approaching the edge of the substrate.

公开(公告)号：US20230113184A1

公开(公告)日：2023-04-13

申请号：US17865386

申请日：2022-07-15

Applicant: SEMES CO., LTD.

Inventor： Jae Won SHIN ,  Jae Seong LEE ,  Hae Won CHOI ,  Joon Ho WON ,  Koriakin ANTON ,  Min Woo KIM ,  Hyung Seok KANG ,  Eung Su KIM ,  Pil Kyun HEO ,  Jin Yeong SUNG

IPC: H01L21/67

Abstract: The present disclosure relates to a flow resistance generating unit that generates a flow resistance in a pipe to solve a flow imbalance problem due to a bent pipe and stabilizes an internal airflow, and a substrate treating apparatus including the same. The substrate treating apparatus comprises a fluid supply unit for supplying fluid for treating a substrate and including an upper fluid supply module for supplying the fluid to an upper portion of the substrate, a lower fluid supply module for supplying the fluid to a lower portion of the substrate, and a supply pipe connected to at least one of the upper fluid supply module and the lower fluid supply module, and a flow resistance generating unit installed in the supply pipe and for generating a flow resistance with respect to the fluid passing through the supply pipe.

公开(公告)号：US20230072728A1

公开(公告)日：2023-03-09

申请号：US17737345

申请日：2022-05-05

Applicant: SEMES CO., LTD.

Inventor： Jae Seong LEE ,  Jung Suk GOH ,  Hae Won CHOI

IPC: H01L21/67 ,  H01L21/02

Abstract: The present disclosure provides a substrate treating apparatus, in which stability is secured by performing a process under a lower pressure condition, and a substrate treating method using the same. The substrate treating apparatus comprises a chamber including a housing and a treating region, wherein a substrate on which a rinse liquid remains is loaded into the chamber, a supply port installed in the housing and for supplying a first drying gas and a second drying gas to the treating region, a first supply line connected to the supply port, and through which the first drying gas is moved, and a second supply line connected to the supply port, and through which the second drying gas is moved, wherein the first drying gas is a gas below a first temperature, and the second drying gas is a gas equal to or above the first temperature, wherein the second drying gas dries the rinse liquid remaining on the substrate.

公开(公告)号：US20210183660A1

公开(公告)日：2021-06-17

申请号：US17115313

申请日：2020-12-08

Applicant: SEMES CO., LTD.

Inventor： Jung Suk GOH ,  Jae Seong LEE ,  Do Youn LIM ,  Kuk Saeng KIM ,  Young Dae CHUNG ,  Tae Shin KIM ,  Jee Young LEE ,  Won Geun KIM ,  Ji Hoon JEONG ,  Kwang Sup KIM ,  Pil Kyun HEO ,  Yoon Ki SA ,  Ye Rim YEON ,  Hyun YOON ,  Do Yeon KIM ,  Yong Jun SEO ,  Byeong Geun KIM ,  Young Je UM

IPC: H01L21/311 ,  H01L21/66 ,  H01L21/67

Abstract: Method and apparatus for etching a thin layer including silicon nitride formed on a substrate are disclosed. Etchant including phosphoric acid and water is supplied on the substrate so that a liquid layer is formed on the substrate. The thin layer is etched by reaction between the thin layer and the etchant. Thickness of the liquid layer is measured to detect variation in the thickness of the liquid layer while etching the thin layer. Variation in the concentration of the phosphoric acid and the water is calculated based on the variation in the thickness of the liquid layer. Water is supplied on the substrate based on the variation in the concentration of the phosphoric acid and the water so that the concentration of the phosphoric acid and the water becomes a predetermined value.