Nano-wire growth
    1.
    发明授权

    公开(公告)号:US11618970B2

    公开(公告)日:2023-04-04

    申请号:US17115238

    申请日:2020-12-08

    Applicant: SILCOTEK CORP.

    Inventor: Min Yuan

    Abstract: Nano-wire growth processes, nano-wires, and articles having nano-wires are disclosed. The nano-wire growth process includes trapping growth-inducing particles on a substrate, positioning the substrate within a chamber, closing the chamber, applying a vacuum to the chamber, introducing a precursor gas to the chamber, and thermally decomposing the precursor gas. The thermally decomposing of the precursor gas grows nano-wires from the growth-inducing particles. The nano-wires and the articles having the nano-wires are produced by the nano-wire growth process.

    Silicon-nitride-containing thermal chemical vapor deposition coating

    公开(公告)号:US10087521B2

    公开(公告)日:2018-10-02

    申请号:US14970015

    申请日:2015-12-15

    Applicant: SILCOTEK CORP.

    Abstract: Surfaces, articles, and processes having silicon-nitride-containing thermal chemical vapor deposition coating are disclosed. A process includes producing a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. Flow into and from the chamber is restricted or halted during the producing of the silicon-nitride-containing thermal chemical vapor deposition coating on the surface. A surface includes a silicon-nitride-containing thermal chemical vapor deposition coating. The surface has at least a concealed portion that is obstructed from view. An article includes a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. The surface has at least a concealed portion that is obstructed from view.

    Thermal chemical vapor deposition process and coated article

    公开(公告)号:US10323321B1

    公开(公告)日:2019-06-18

    申请号:US14990889

    申请日:2016-01-08

    Applicant: SILCOTEK CORP.

    Abstract: Thermal chemical vapor deposition processes and coated articles are disclosed. The coated article includes a surface having a surface impurity and a coating on the surface formed by thermally reacting a gas. In comparison to a comparable coating without the surface impurity, the coating on the surface has substantially the same level of adhesion, corrosion resistance over 24 hours in 6M HCl, corrosion resistance over 72 hours in NaClO, and electrochemical impedance spectroscopy results. Additionally or alternatively, the surface impurity has properties that reduce or eliminate adhesion of a comparative coating produced by decomposition of silane on a comparative surface following exposure of the surface to a temperature.

    Corrosion-resistant coated article and thermal chemical vapor deposition coating process

    公开(公告)号:US11161324B2

    公开(公告)日:2021-11-02

    申请号:US16129989

    申请日:2018-09-13

    Applicant: SILCOTEK CORP.

    Inventor: Min Yuan

    Abstract: Corrosion-resistant coated articles and a thermal chemical vapor deposition coating processes are disclosed. The article includes a metallic material having a first composition including a first iron concentration and a first chromium concentration, the first iron concentration being greater than the first chromium concentration, a surface of the metallic material having a second composition including a second iron concentration and a second chromium concentration, the second chromium concentration being less than the first chromium concentration, an oxide layer on the surface of the metallic material having a third composition including an iron oxide concentration and a chromium oxide concentration, the chromium oxide concentration being greater than the iron oxide concentration and being devoid of precipitates, and a thermal chemical vapor deposition coating on the oxide layer. The process includes producing the article by treating to produce the surface, oxidizing to produce the oxide layer, and applying the coating.

    Liquid chromatography technique
    7.
    发明授权

    公开(公告)号:US10881986B2

    公开(公告)日:2021-01-05

    申请号:US16282626

    申请日:2019-02-22

    Applicant: SILCOTEK CORP.

    Abstract: Liquid chromatography techniques are disclosed. Specifically, the liquid chromatography technique includes providing a liquid chromatography system having a coated metallic fluid-contacting element, and transporting a fluid to contact the coated metallic fluid-contacting element. Conditions for the transporting of the fluid are selected from the group consisting of the temperature of the fluid being greater than 150° C., pressure urging the fluid being greater than 60 MPa, the fluid having a protein-containing analyte incompatible with one or both of titanium and polyether ether ketone, the fluid having a chelating agent incompatible with the one or both of the titanium or the polyether ether ketone, and combinations thereof.

    Silicon-nitride-containing thermal chemical vapor deposition coating

    公开(公告)号:US10851455B2

    公开(公告)日:2020-12-01

    申请号:US16121994

    申请日:2018-09-05

    Applicant: SILCOTEK CORP.

    Abstract: Surfaces, articles, and processes having silicon-nitride-containing thermal chemical vapor deposition coating are disclosed. A process includes producing a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. Flow into and from the chamber is restricted or halted during the producing of the silicon-nitride-containing thermal chemical vapor deposition coating on the surface. A surface includes a silicon-nitride-containing thermal chemical vapor deposition coating. The surface has at least a concealed portion that is obstructed from view. An article includes a silicon-nitride-containing thermal chemical vapor deposition coating on a surface within a chamber. The surface has at least a concealed portion that is obstructed from view.

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