公开(公告)号：US20170092810A1

公开(公告)日：2017-03-30

申请号：US14302250

申请日：2014-06-11

Applicant: SORAA, INC.

Inventor： James W. Raring ,  Christiane Elsass

IPC: H01L33/32 ,  H01L33/06 ,  H01S5/343 ,  H01L33/00 ,  H01S5/32 ,  H01S5/323 ,  H01L33/18 ,  H01L33/24

CPC classification number: H01L33/32 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/04 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/18 ,  H01L33/24 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04

Abstract: Optical devices such as LEDs and lasers are discloses. The devices include a non-polar gallium nitride substrate member having an off-axis non-polar oriented crystalline surface plane. The off-axis non-polar oriented crystalline surface plane can be up to about −0.6 degrees in a c-plane direction and up to about −20 degrees in a c-plane direction in certain embodiments. In certain embodiments, a gallium nitride containing epitaxial layer is formed overlying the off-axis non-polar oriented crystalline surface plane. In certain embodiments, devices include a surface region overlying the gallium nitride epitaxial layer that is substantially free of hillocks.

公开(公告)号：US09831386B2

公开(公告)日：2017-11-28

申请号：US14302250

申请日：2014-06-11

Applicant: SORAA, INC.

Inventor： James W. Raring ,  Christiane Elsass

IPC: H01L33/32 ,  H01L33/18 ,  H01L33/06 ,  H01L33/24 ,  H01L33/00 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343

CPC classification number: H01L33/32 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/04 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/16 ,  H01L33/18 ,  H01L33/24 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/04

Abstract: Optical devices such as LEDs and lasers are discloses. The devices include a non-polar gallium nitride substrate member having an off-axis non-polar oriented crystalline surface plane. The off-axis non-polar oriented crystalline surface plane can be up to about −0.6 degrees in a c-plane direction and up to about −20 degrees in a c-plane direction in certain embodiments. In certain embodiments, a gallium nitride containing epitaxial layer is formed overlying the off-axis non-polar oriented crystalline surface plane. In certain embodiments, devices include a surface region overlying the gallium nitride epitaxial layer that is substantially free of hillocks.

公开(公告)号：US08964807B1

公开(公告)日：2015-02-24

申请号：US13890431

申请日：2013-05-09

Applicant: Soraa, Inc.

Inventor： Melvin McLaurin ,  James W. Raring ,  Christiane Elsass

IPC: H01S5/343 ,  H01S5/323 ,  H01S5/32 ,  H01S5/22 ,  H01S5/30

CPC classification number: H01S5/3202 ,  H01S5/0422 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/2205 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/3216 ,  H01S5/32308 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/34386 ,  H01S2301/173

Abstract: In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a non-polar ({10-10}) crystal orientation or a semi-polar ({10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction). The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.

Abstract translation: 在一个实例中，本发明提供一种含镓和氮的激光二极管器件。 该器件具有含镓和氮的衬底材料，其包括表面区域，该表面区域被配置在非极性（{10-10}）晶体取向或半极性（{10-10}晶体取向配置为断开 朝着或远离[0001]方向的角度）。 该器件还具有形成在表面区域上方的GaN区域，覆盖在该表面区域上的有源区域，以及包含覆盖该表面区域的镁物质的吸杂区域。 该器件具有包含（InAl）GaN材料的p型覆层区域，掺杂有形成在有源区域上的多个镁物质。