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公开(公告)号：US12134556B2
公开(公告)日：2024-11-05
申请号：US17534286
申请日：2021-11-23
Inventor： Enri Duqi , Lorenzo Baldo , Paolo Ferrari , Benedetto Vigna , Flavio Francesco Villa , Laura Maria Castoldi , Ilaria Gelmi
IPC: B81B7/00
Abstract: A semiconductor device includes: a substrate; a transduction microstructure integrated in the substrate; a cap joined to the substrate and having a first face adjacent to the substrate and a second, outer, face; and a channel extending through the cap from the second face to the first face and communicating with the transduction microstructure. A protective membrane made of porous polycrystalline silicon permeable to aeriform substances is set across the channel.
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公开(公告)号：US11871668B2
公开(公告)日：2024-01-09
申请号：US17158904
申请日：2021-01-26
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Paolo Ferrari , Flavio Francesco Villa , Luca Zanotti , Andrea Nomellini , Luca Seghizzi
Abstract: A thermoelectric generator includes a substrate and one or more thermoelectric elements on the substrate and each configured to convert a thermal drop across the thermoelectric elements into an electric potential by Seebeck effect. The thermoelectric generator includes a cavity between the substrate and the thermoelectric elements. The thermoelectric generator includes, within the cavity, a support structure for supporting the thermoelectric elements. The support structure has a thermal conductivity lower than a thermal conductivity of the substrate.
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3.发明授权Microfluidic device with integrated stirring structure and manufacturing method thereof 有权具有集成搅拌结构的微流体装置及其制造方法公开(公告)号：US09394160B2
公开(公告)日：2016-07-19
申请号：US14250098
申请日：2014-04-10
Applicant: STMicroelectronics S.r.l.
Inventor： Sabrina Conoci , Paolo Ferrari
CPC classification number: B81C1/00198 , B01F11/0082 , B01F13/0059 , B01F13/0091 , B01L3/502707 , B01L3/50273 , B01L2200/12 , B01L2300/06 , B81C1/00166 , B81C1/00182 , C12M27/02 , Y10T29/49009
Abstract: A microfluidic device, comprising: a semiconductor body, having a first side and a second side, opposite to one another in a first direction; and at least one well, configured for containing a fluid, extending in the semiconductor body starting from the first side and being delimited at the bottom by a bottom surface. The microfluidic device further comprises a stirring structure integrated in the well at the bottom surface, the stirring structure including a first stirring portion coupled to the semiconductor body and provided with at least one first suspended beam configured for being moved in a second direction so as to generate, in use, agitation of the fluid present in said well.
Abstract translation: 一种微流体装置，包括：半导体本体，具有在第一方向上彼此相对的第一侧和第二侧; 以及至少一个孔，构造成用于容纳流体，所述流体在所述半导体本体中从所述第一侧开始并且在底部由底面限定。 微流体装置还包括集成在底表面中的井中的搅拌结构，搅拌结构包括耦合到半导体主体并设置有至少一个第一悬置梁的第一搅拌部分，所述第一悬吊梁被配置为沿第二方向移动，以便 在使用中产生在所述井中存在的流体的搅动。
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4.发明申请MICROFLUIDIC DEVICE WITH INTEGRATED STIRRING STRUCTURE AND MANUFACTURING METHOD THEREOF 审中-公开具有集成式搅拌结构的微流体装置及其制造方法公开(公告)号：US20160090302A1
公开(公告)日：2016-03-31
申请号：US14963052
申请日：2015-12-08
Applicant: STMicroelectronics S.r.l.
Inventor： Sabrina Conoci , Paolo Ferrari
CPC classification number: B81C1/00198 , B01F11/0082 , B01F13/0059 , B01F13/0091 , B01L3/502707 , B01L3/50273 , B01L2200/12 , B01L2300/06 , B81C1/00166 , B81C1/00182 , C12M27/02 , Y10T29/49009
Abstract: A microfluidic device, comprising: a semiconductor body, having a first side and a second side, opposite to one another in a first direction; and at least one well, configured for containing a fluid, extending in the semiconductor body starting from the first side and being delimited at the bottom by a bottom surface. The microfluidic device further comprises a stirring structure integrated in the well at the bottom surface, the stirring structure including a first stirring portion coupled to the semiconductor body and provided with at least one first suspended beam configured for being moved in a second direction so as to generate, in use, agitation of the fluid present in said well.
Abstract translation: 一种微流体装置，包括：半导体本体，具有在第一方向上彼此相对的第一侧和第二侧; 以及至少一个孔，构造成用于容纳流体，所述流体在所述半导体本体中从所述第一侧开始并且在底部由底面限定。 微流体装置还包括集成在底表面中的井中的搅拌结构，搅拌结构包括耦合到半导体主体并设置有至少一个第一悬置梁的第一搅拌部分，所述第一悬吊梁被配置为沿第二方向移动，以便 在使用中产生在所述井中存在的流体的搅动。
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5.发明申请SEMICONDUCTOR INTEGRATED DEVICE WITH MECHANICALLY DECOUPLED ACTIVE AREA AND RELATED MANUFACTURING PROCESS 有权具有机械解除活动区域的半导体集成器件及相关制造工艺公开(公告)号：US20130168840A1
公开(公告)日：2013-07-04
申请号：US13719103
申请日：2012-12-18
Inventor： Angelo Antonio Merassi , Marco Ferrera , Marco Mantovani , Paolo Ferrari , Benedetto Vigna
CPC classification number: H01L23/562 , H01L21/56 , H01L23/16 , H01L23/3107 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/1461 , H01L2924/00014 , H01L2924/00
Abstract: A semiconductor integrated device is provided with: a die having a body of semiconductor material with a front surface, and an active area arranged at the front surface; and a package having a support element carrying the die at a back surface of the body, and a coating material covering the die. The body includes a mechanical decoupling region, which mechanically decouples the active area from mechanical stresses induced by the package; the mechanical decoupling region is a trench arrangement within the body, which releases the active area from an external frame of the body, designed to absorb the mechanical stresses induced by the package.
Abstract translation: 半导体集成器件具有：具有前表面的半导体材料体的主体和配置在前表面的有源区域; 以及具有在主体的背面承载模具的支撑元件和覆盖模具的包覆材料的包装。 机体包括机械解耦区域，机械解耦有源区域与由包装引起的机械应力; 机械解耦区域是主体内的沟槽布置，其从主体的外框架释放活动区域，设计成吸收由包装引起的机械应力。
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Patent Agency Ranking
公开(公告)号：US09527726B2
公开(公告)日：2016-12-27
申请号：US14963052
申请日：2015-12-08
Applicant: STMicroelectronics S.r.l.
Inventor： Sabrina Conoci , Paolo Ferrari
CPC classification number: B81C1/00198 , B01F11/0082 , B01F13/0059 , B01F13/0091 , B01L3/502707 , B01L3/50273 , B01L2200/12 , B01L2300/06 , B81C1/00166 , B81C1/00182 , C12M27/02 , Y10T29/49009
Abstract: A microfluidic device, comprising: a semiconductor body, having a first side and a second side, opposite to one another in a first direction; and at least one well, configured for containing a fluid, extending in the semiconductor body starting from the first side and being delimited at the bottom by a bottom surface. The microfluidic device further comprises a stirring structure integrated in the well at the bottom surface, the stirring structure including a first stirring portion coupled to the semiconductor body and provided with at least one first suspended beam configured for being moved in a second direction so as to generate, in use, agitation of the fluid present in said well.
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公开(公告)号：US20160121612A1
公开(公告)日：2016-05-05
申请号：US14981701
申请日：2015-12-28
Applicant: STMicroelectronics S.r.l.
Inventor： Dino Faralli , Laura Maria Castoldi , Paolo Ferrari , Marta Carminati
IPC: B41J2/16
CPC classification number: B41J2/1433 , B41J2/14129 , B41J2/1603 , B41J2/162 , B41J2/1623 , B41J2/1626 , B41J2/1628 , B41J2/1629 , B41J2/1632 , B41J2/1642 , B41J2/1643
Abstract: Embodiments disclose herein are directed to a microfluidic delivery device that has a predominantly semiconductor structure, such as silicon. In particular, the structure for delivering fluid may be formed from polycrystalline silicon, also called polysilicon, or epitaxial silicon. The microfluidic delivery device that predominantly uses silicon based materials to form the structures that are in contact with the dispensed fluid results in a device that is compatible with a wide set of fluids and applications.
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公开(公告)号：US08988155B2
公开(公告)日：2015-03-24
申请号：US13689430
申请日：2012-11-29
Applicant: STMicroelectronics S.r.l.
Inventor： Giorgio Allegato , Paolo Ferrari , Laura Maria Castoldi , Benedetto Vigna
IPC: H03B5/32 , H01L41/053 , H01L41/083 , H01L41/23 , H03B1/00 , H01L29/66 , H01L41/29 , H03H3/02 , H03H9/05 , H03H9/10 , H01L41/09 , H03H9/17 , H03H3/007
CPC classification number: H03B1/00 , H01L29/66007 , H01L41/053 , H01L41/083 , H01L41/094 , H01L41/23 , H01L41/29 , H03B5/32 , H03H3/007 , H03H3/02 , H03H9/0538 , H03H9/10 , H03H9/1007 , H03H9/1057 , H03H9/172
Abstract: An oscillator device includes: a structural layer extending over a first side of a semiconductor substrate; a semiconductor cap set on the structural layer; a coupling region extending between and hermetically sealing the structural layer and the cap and forming a cavity within the oscillator device; first and second conductive paths extending between the substrate and the structural layer; first and second conductive pads housed in the cavity and electrically coupled to first terminal portions of the first and second conductive paths by first and second connection regions, respectively, which extend through and are insulated from the structural layer; a piezoelectric resonator having first and second ends electrically coupled, respectively, to the first and second conductive pads, and extending in the cavity; and third and fourth conductive pads positioned outside the cavity and electrically coupled to second terminal portions of the first and second conductive paths.
Abstract translation: 振荡器装置包括：在半导体衬底的第一侧上延伸的结构层; 设置在结构层上的半导体盖; 耦合区域，其在所述结构层和所述盖之间延伸并且密封所述结构层和所述盖并在所述振荡器装置内形成空腔; 在基板和结构层之间延伸的第一和第二导电路径; 第一和第二导电焊盘，其容纳在所述空腔中，并且分别通过延伸穿过所述第一和第二导电路径并与所述结构层绝缘的第一和第二连接区域电连接到所述第一和第二导电路径的第一端子部分; 压电谐振器，其具有分别电耦合到第一和第二导电焊盘并且在空腔中延伸的第一和第二端; 以及第三和第四导电焊盘，其位于腔的外部并电耦合到第一和第二导电路径的第二端子部分。
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9.发明申请MICROFLUIDIC DEVICE WITH INTEGRATED STIRRING STRUCTURE AND MANUFACTURING METHOD THEREOF 有权具有集成式搅拌结构的微流体装置及其制造方法公开(公告)号：US20140308738A1
公开(公告)日：2014-10-16
申请号：US14250098
申请日：2014-04-10
Applicant: STMicroelectronics S.r.l.
Inventor： Sabrina Conoci , Paolo Ferrari
CPC classification number: B81C1/00198 , B01F11/0082 , B01F13/0059 , B01F13/0091 , B01L3/502707 , B01L3/50273 , B01L2200/12 , B01L2300/06 , B81C1/00166 , B81C1/00182 , C12M27/02 , Y10T29/49009
Abstract: A microfluidic device, comprising: a semiconductor body, having a first side and a second side, opposite to one another in a first direction; and at least one well, configured for containing a fluid, extending in the semiconductor body starting from the first side and being delimited at the bottom by a bottom surface. The microfluidic device further comprises a stirring structure integrated in the well at the bottom surface, the stirring structure including a first stirring portion coupled to the semiconductor body and provided with at least one first suspended beam configured for being moved in a second direction so as to generate, in use, agitation of the fluid present in said well.
Abstract translation: 一种微流体装置，包括：半导体本体，具有在第一方向上彼此相对的第一侧和第二侧; 以及至少一个孔，构造成用于容纳流体，所述流体在所述半导体本体中从所述第一侧开始并且在底部由底面限定。 微流体装置还包括集成在底表面中的井中的搅拌结构，搅拌结构包括耦合到半导体主体并设置有至少一个第一悬置梁的第一搅拌部分，所述第一悬吊梁被配置为沿第二方向移动，以便 在使用中产生在所述井中存在的流体的搅动。
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公开(公告)号：US11696504B2
公开(公告)日：2023-07-04
申请号：US17321252
申请日：2021-05-14
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Paolo Ferrari , Flavio Francesco Villa , Lucia Zullino , Andrea Nomellini , Luca Seghizzi , Luca Zanotti , Bruno Murari , Martina Scolari
IPC: H10N10/855 , H10N10/01 , H10N10/17
CPC classification number: H10N10/855 , H10N10/01 , H10N10/17
Abstract: A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal and an output electrical terminal electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon.
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