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    Dual static electro-optical phase shifter having two control terminals
    4.
    发明授权
    Dual static electro-optical phase shifter having two control terminals 有权
    具有两个控制端子的双静电电光移相器

    公开(公告)号：US09239506B2

    公开(公告)日：2016-01-19

    申请号：US14271723

    申请日：2014-05-07

    Applicant: STMICROELECTRONICS SA

    Inventor： Jean-Robert Manouvrier

    IPC: G02F1/035 ,  G02F1/225 ,  G02F1/015 ,  G02F1/025 ,  H01L33/00 ,  G02F1/21

    CPC classification number: G02F1/2257 ,  G02F1/015 ,  G02F1/025 ,  G02F2001/212 ,  G02F2203/20 ,  H01L33/0012

    Abstract: A semiconductor electro-optical phase shifter comprises a central zone (I1, I2) having a minimum doping level; first and second lateral zones (N+, P+) flanking the central zone along a first axis, respectively N and P-doped, so as to form a P-I-N junction between the first and second lateral zones. The central zone comprises first and second optical action zones (I1, I2) separated along the first axis. The second lateral zone is doped discontinuously along a second axis perpendicular to the first axis. Two electrical control terminals (A, C) are provided, one in contact with the first lateral zone, and the other in contact with doped portions of the second lateral zone.

    Abstract translation: 半导体电光移相器包括具有最小掺杂水平的中心区（I1，I2）; 第一和第二侧向区域（N +，P +）分别沿着第一轴线分别位于中心区域N和P掺杂，以便在第一和第二侧向区域之间形成P-I-N结。 中心区域包括沿着第一轴线分离的第一和第二光学作用区域（I1，I2）。 第二横向区域沿着垂直于第一轴线的第二轴线不连续地掺杂。 设置两个电气控制端子（A，C），一个与第一侧向区域接触，另一个与第二侧向区域的掺杂部分接触。

    Vertical gate transistor and pixel structure comprising such a transistor
    5.
    发明授权
    Vertical gate transistor and pixel structure comprising such a transistor 有权
    垂直栅晶体管和包括这种晶体管的像素结构

    公开(公告)号：US09209211B2

    公开(公告)日：2015-12-08

    申请号：US14660847

    申请日：2015-03-17

    Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

    Inventor： Jean-Robert Manouvrier ,  Pascal Fonteneau ,  Xavier Montagner

    IPC: H01L27/146 ,  H01L29/423

    CPC classification number: H01L27/14614 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L29/4236

    Abstract: The present disclosure relates to a photodiode comprising: a P-conductivity type substrate region, an electric charge collecting region for collecting electric charges appearing when a rear face of the substrate region receives light, the collecting region comprising an N-conductivity type region formed deep in the substrate region, an N-conductivity type read region formed in the substrate region, and an isolated transfer gate, formed in the substrate region in a deep isolating trench extending opposite a lateral face of the N-conductivity type region, next to the read region, and arranged for receiving a gate voltage to transfer electric charges stored in the collecting region toward the read region.

    Abstract translation: 本发明涉及一种光电二极管，包括：P导电型衬底区域，用于收集当衬底区域的后表面接收光时出现的电荷的电荷收集区域，所述收集区域包括形成深的N导电类型区域 在基板区域中，形成在基板区域中的N导电型读取区域和隔离的转移栅极，形成在与N导电型区域的侧面相反延伸的深隔离沟槽中的基板区域中， 并且被布置为接收栅极电压以将存储在收集区域中的电荷转移到读取区域。

    Optical modulator with automatic bias correction
    6.
    发明授权
    Optical modulator with automatic bias correction 有权

    公开(公告)号：US10234703B2

    公开(公告)日：2019-03-19

    申请号：US15468831

    申请日：2017-03-24

    Applicant: STMicroelectronics SA

    Inventor： Jean-Robert Manouvrier

    IPC: G02F1/01 ,  G01J9/00 ,  G01J9/02 ,  G02F1/025 ,  H04B10/50 ,  G02F1/21 ,  G02F1/225

    Abstract: An optical modulator uses an optoelectronic phase comparator configured to provide, in the form of an electrical signal, a measure of a phase difference between two optical waves. The phase comparator includes an optical directional coupler having two coupled channels respectively defining two optical inputs for receiving the two optical waves to be compared. Two photodiodes are configured to respectively receive the optical output powers of the two channels of the directional coupler. An electrical circuit is configured to supply, as a measure of the optical phase shift, an electrical signal proportional to the difference between the electrical signals produced by the two photodiodes.

    ESD protection thyristor adapted to electro-optical devices
    10.
    发明授权
    ESD protection thyristor adapted to electro-optical devices 有权
    ESD保护晶闸管适用于电光器件

    公开(公告)号：US09523815B2

    公开(公告)日：2016-12-20

    申请号：US14638292

    申请日：2015-03-04

    Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

    Inventor： Jean-Robert Manouvrier ,  Estelle Batail

    IPC: G02B6/42 ,  G02B6/122 ,  H01L29/74 ,  H01L27/02

    CPC classification number: G02B6/122 ,  G02B6/4275 ,  G02B6/4295 ,  H01L27/0248 ,  H01L29/74

    Abstract: A thyristor may include a first optical waveguide segment in a semiconductor material, having first and second complementary longitudinal parts of opposite conductivity types configured to form a longitudinal bipolar junction therebetween. The thyristor may further include a second optical waveguide segment in a semiconductor material, adjacent the first waveguide segment and having first and second complementary longitudinal parts of opposite conductivity types configured to form a longitudinal bipolar junction therebetween. A transverse bipolar junction may be between the second longitudinal portions of the first and second waveguide segments. An electrical insulator may separate each of the first longitudinal portions from the waveguide segment adjacent thereto.

    Abstract translation: 晶闸管可以包括半导体材料中的第一光波导段，其具有构造为在其间形成纵向双极结的相反导电类型的第一和第二互补纵向部分。 晶闸管可以进一步包括半导体材料中的第二光波导段，邻近第一波导段并且具有构造成在其间形成纵向双极结的相反导电类型的第一和第二互补纵向部分。 横向双极结可以在第一和第二波导段的第二纵向部分之间。 电绝缘体可以将每个第一纵向部分与与其相邻的波导段分开。

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