公开(公告)号：US20220321124A1

公开(公告)日：2022-10-06

申请号：US17846362

申请日：2022-06-22

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Nicolas Borrel ,  Jimmy Fort ,  Mathieu Lisart

IPC: H03K19/003 ,  H03F3/45 ,  H03K19/00 ,  H03K19/17736 ,  H03L7/097

Abstract: A physically unclonable function device includes a set of diode-connected MOS transistors having a random distribution of respective threshold voltages. A first circuit is configured to impose, on each first transistor, a fixed respective gate voltage regardless of the value of a current flowing in this first transistor. A second circuit is configured to impose, on each second transistor, a fixed respective gate voltage regardless of the value of a current flowing in this second transistor. A current mirror stage is coupled between the first circuit and the second circuit and is configured to deliver the reference current from a sum of the currents flowing in the first transistors. A comparator is configured to deliver a signal whose level depends on a comparison between a first current obtained from a reference current based on the first transistors and a second current of the second transistors.

公开(公告)号：US20180097058A1

公开(公告)日：2018-04-05

申请号：US15444644

申请日：2017-02-28

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Clement Champeix ,  Nicolas Borrel ,  Alexandre Sarafianos

IPC: H01L29/06 ,  H03K5/24 ,  H01L29/10 ,  H01L27/06 ,  G06F21/77

CPC classification number: H01L29/0623 ,  G06F21/75 ,  G06F21/77 ,  G06F21/78 ,  G06F21/87 ,  G06F21/88 ,  H01L21/823892 ,  H01L23/57 ,  H01L23/576 ,  H01L27/0629 ,  H01L27/092 ,  H01L27/0928 ,  H01L29/107 ,  H01L29/1095 ,  H01L29/66181 ,  H03K5/24

Abstract: An electronic chip includes a doped semiconductor substrate of a first conductivity type, a doped buried layer of a second conductivity type overlying the substrate, and a first doped well of the first conductivity type overlying the buried layer. Circuit components can be formed at a top surface of the first doped well and separated from the buried layer. A current detector is coupled to the buried layer and configured detect a bias current flowing into or out of the buried layer.

公开(公告)号：US11374569B2

公开(公告)日：2022-06-28

申请号：US17413459

申请日：2019-11-28

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Nicolas Borrel ,  Jimmy Fort ,  Mathieu Lisart

IPC: H03K5/22 ,  H03K19/003 ,  H03K19/00 ,  H03K19/17736 ,  H03F3/45 ,  H03L7/097 ,  H04L9/32

Abstract: The physically unclonable function device (DIS) comprises a set of MOS transistors (TR1i, TR2j) mounted in diodes having a random distribution of respective threshold voltages, and comprising N first transistors and at least one second transistor. At least one output node of the function is capable of delivering a signal, the level of which depends on the comparison between a current obtained using a current circulating in the at least one second transistor and a current obtained using a reference current that is equal or substantially equal to the average of the currents circulating in the N first transistors. A first means (FM1i) is configured to impose on each first transistor a respective fixed gate voltage regardless of the value of the current circulating in the first transistor, and a second means (SM2j) is configured to impose a respective fixed gate voltage on each second transistor regardless of the value of the current circulating in the second transistor.

公开(公告)号：US10768229B2

公开(公告)日：2020-09-08

申请号：US16059793

申请日：2018-08-09

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Nicolas Borrel ,  Jimmy Fort

IPC: G01R31/40 ,  G01R31/317 ,  G01R19/165 ,  G06F1/28 ,  H02M1/00

Abstract: A circuit for detecting a glitch in power supply includes a detection circuit to detect the glitch in a DC supply voltage of the power supply when a magnitude in the glitch in a DC supply voltage of the power supply exceeds a detection threshold, wherein the detection threshold is a function of the DC supply voltage, and wherein the detection circuit comprises a low pass filter, a control circuit coupled to the low pass filter, and a current mirror circuit coupled to the control circuit having an output for providing a logic signal indicative of a detected glitch.

公开(公告)号：US09935062B2

公开(公告)日：2018-04-03

申请号：US15661369

申请日：2017-07-27

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Mathieu Lisart ,  Nicolas Borrel

IPC: H01L23/58 ,  H01L23/00 ,  H01L21/66 ,  H03K17/687 ,  H01L23/64 ,  G01R31/28

CPC classification number: H01L23/576 ,  G01R31/2851 ,  G01R31/44 ,  G06F21/6245 ,  H01L22/34 ,  H01L23/647 ,  H03K17/687

Abstract: An integrated circuit including a plurality of first semiconductor strips of a first conductivity type and of second semiconductor strips of a second conductivity type arranged in alternated and contiguous fashion on a region of the second conductivity type, including for each of the first strips: a plurality of bias contacts; for each bias contact, a switch capable of applying a potential on the bias contact; two detection contacts arranged at the ends of the first strip; and a detection circuit having its activation causing the turning off of the switches and the comparison with a threshold of the resistance between the detection contacts.

公开(公告)号：US11804842B2

公开(公告)日：2023-10-31

申请号：US17846362

申请日：2022-06-22

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Nicolas Borrel ,  Jimmy Fort ,  Mathieu Lisart

IPC: H03K5/22 ,  H03K19/003 ,  H03F3/45 ,  H03K19/00 ,  H03K19/17736 ,  H03L7/097 ,  H04L9/32

CPC classification number: H03K19/00384 ,  H03F3/45273 ,  H03F3/45488 ,  H03K19/0027 ,  H03K19/17744 ,  H03L7/097 ,  H04L9/3278 ,  H04L2209/12

Abstract: A physically unclonable function device includes a set of diode-connected MOS transistors having a random distribution of respective threshold voltages. A first circuit is configured to impose, on each first transistor, a fixed respective gate voltage regardless of the value of a current flowing in this first transistor. A second circuit is configured to impose, on each second transistor, a fixed respective gate voltage regardless of the value of a current flowing in this second transistor. A current mirror stage is coupled between the first circuit and the second circuit and is configured to deliver the reference current from a sum of the currents flowing in the first transistors. A comparator is configured to deliver a signal whose level depends on a comparison between a first current obtained from a reference current based on the first transistors and a second current of the second transistors.

公开(公告)号：US11531049B2

公开(公告)日：2022-12-20

申请号：US17322140

申请日：2021-05-17

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Clement Champeix ,  Mathieu Dumont ,  Nicolas Borrel ,  Mathieu Lisart

IPC: G01R29/08 ,  G06F21/55 ,  G06F21/75 ,  H01L23/00 ,  H01L23/66

Abstract: An embodiment integrated circuit includes a first electromagnetic pulse detection device that comprises a first loop antenna formed in an interconnection structure of the integrated circuit, a first end of the first antenna being connected to a first node of application of a power supply potential and a second end of the antenna being coupled to a second node of application of the power supply potential, and a first circuit connected to the second end of the first antenna and configured to output a first signal representative of a comparison of a first current in the first antenna with a first threshold.

公开(公告)号：US20220066494A1

公开(公告)日：2022-03-03

申请号：US17399617

申请日：2021-08-11

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Nicolas Demange ,  Nicolas Borrel ,  Jimmy Fort

IPC: G05F3/26 ,  G06F21/75

Abstract: An embodiment electronic circuit power supply device is configured to: flow, through a first conductor connected to a node, a first current that is an image of a second current consumed by the electronic circuit; flow a third current through a second conductor connected to the node; regulate a potential of the node to a constant value by acting on the third current; flow a fourth constant current through a third conductor connected to the node; and consume a fifth current that is an image of the third current.

公开(公告)号：US10560089B2

公开(公告)日：2020-02-11

申请号：US16161531

申请日：2018-10-16

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Nicolas Borrel ,  Jimmy Fort ,  Francesco La Rosa

IPC: H03L5/02 ,  H03K17/20 ,  H03K17/22

Abstract: A power supply voltage is monitored by a monitoring circuit including a band gap voltage generator core including a first node and a second node. A control circuit connected to the first and second nodes is configured to deliver a control signal on a first output node having a first state when an increasing power supply voltage is below a first threshold and having a second state when increasing power supply voltage exceeds the first threshold. The first threshold is at least equal to the band gap voltage. An equalization circuit also connected to the first and second nodes with feedback to the band gap voltage generator core generates the bandgap voltage at a second output node. The control signal operates to control actuation of the equalization circuit.

公开(公告)号：US10347595B2

公开(公告)日：2019-07-09

申请号：US15609783

申请日：2017-05-31

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Clement Champeix ,  Nicolas Borrel

IPC: H03B1/00 ,  H03K5/00 ,  H01L23/00 ,  H01L25/065 ,  H01L23/48

Abstract: A device includes a first chip having a front side and a back side. A second chip is stacked with the first chip and located on the back side of the first chip. A first loop includes first and second through vias located in the first chip. Each through via has a first end on the front side of the first chip and a second end on the back side of the first chip. The first loop also includes a first track that connects the first ends of the first and second through vias is located in the first chip on the front side thereof and a second track that connects the second ends of the first and second through vias is located in the second chip. A detection circuit can detect an electrical characteristic of the first loop.